BU 11 APX Search Results

XC-01

Abstract: D70236 smd 3F9 uPD72291 JUPD70236 interfacing of 8251 devices with 8085 high level language programming of 8085 microprocessor 8085 mnemonic opcode ls-112 TFK U 111 B
Contextual Info: NEC Electronics Inc. Description The V53 is a high-speed, high-integration 16-bit CM O S m icroprocessor with a CPU that is object and source code com patible with the V20 /V30®. Integrated on the same die is a 4-channel D M A controller, a DART, three

BU508A

Abstract: BU508D transistor d 1991 ar T1185 philips bu508a transistor Bu508A
Contextual Info: N AMER PHILIPS/DISCRETE blE D • bb£3^31 D02A2b4 DEI BU508A BU508D SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed sw itching npn tran sisto r in S O T 93A envelope intended fo r use in h o rizontal d e flectio n c irc u its o f co lo u r television receivers. T he BU 508D has an integrated e fficien cy diode.

BUK441

Abstract: BUK441-100A BUK441-100B
Contextual Info: N AMER PHILIPS /D I SCRE TE b'JE I m ^53^31 003DS05 TOb • APX Philips Semiconductors Product Specification PowerMOS transistor G E N E R A L DESCRiPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

transistor 5BM

Abstract: BUK443 BUK443-60A BUK443-60B
Contextual Info: N AMER PHIL IPS /DISCRETE bTE D m ^^ 53^31 0 D 3 D5 1 S ÔS 5 H A P X Philips Sem iconductors Product Specification PowerMCS transistor G E N E R A L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic fuil-pack envelope. The device is Intended for use In

Contextual Info: N AUER PHILIPS/DISCRETE bbS3T31 0 0 2 6 3 ^ 221 b'lE J> BUT11 BUT11A _ y v _ SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-220 envelope, intended for use in converters, inverters, switching regulators, m otor control systems etc.

TRANSISTOR b72

Abstract: BUK454-200A BUK454-200B T0220AB
Contextual Info: N AUER PHILIPS/DISCRETE b^E D m ^ 5 3 ^ 3 1 GDBDblS 73b • APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: N AUER PHILIPS/D ISCR ETE b'tE D bbS3^31 QQ30bRQ 417 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in

bu2508df

Abstract: BU250BDF 2T3 transistor sot199
Contextual Info: N AUER PHI LIP S/DISCRETE bTE D • 1^53^31 D02Ö3S7 672 * A P X Product Specification Philips Semiconductors_ Silicon Diffused Power Transistor BU2508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated

BUW13F

Abstract: BUW13AF
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3R31 0DEÖS55 öbl ■ APX BUW13F BUW13AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn pow er tran sisto r in a S O T 199 envelope intended fo r use in converters, inverters, sw itching regulators, m o to r co n tro l systems, etc.

BUK100-50GS

Abstract: T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbSa^l 0CI3D34b bb7 ■ APX Philips Sem iconductors Product Specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for

transistor K 1413

Abstract: buw13a BUW13 discrete time control systems
Contextual Info: N AUER PHILIPS/DISCRETE II bbS3*î31 □□EÖS47 715 I IAPX BUW13 BUW13A b^E SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn pow er transistors in a SOT93 envelope, intended fo r use in converters, inverters, sw itching regulators, m o to r c o n tro l systems etc.

Contextual Info: m b b S B ' m Q02M375 12=1 « A P X N AUER PHILIPS/DISCRETE BAV100 to 103 b?E ]> V J GENERAL PURPOSE DIODES FOR SURFACE MOUNTING Silicon planar epitaxial diodes; intended fo r switching and general purposes in industrial equipment e.g. oscilloscopes, digital voltmeters and video ou tp u t stages in colour television.

Contextual Info: bRE J> N AJ1ER PHILIPS/DISCRETE bbS3T31 DD3DS^S Dlfi * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUV28A

Abstract: BUV28
Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbS3R31 DD2Û47D 117 I IAPX '' BUV28 BUV28A SILICON DIFFUSED POWER TRANSISTORS High-speed, glass-passivated npn transistors in a T 0 -2 2 0 envelope intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor controls.

k452

Abstract: BUK452-60A BUK452-60B T0220AB lo25 transistor k452
Contextual Info: N AMER PHILIPS/DISCRETE blE D • ^53^31 □□3GSTÜ Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUK442-100A

Abstract: BUK442-100B
Contextual Info: N AMER PHILIPS/DISCRETE □TE D • bbS3T31 0D3G510 273 * A P X Product Specification P hilip s S e m icon ducto rs BU K442-1OOA/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode f ield-effect power transistor in a plastic full-pack envelope.

k4368

Abstract: BUK436-800A BUK436-800B K43680
Contextual Info: N AMFR PHILIPS/DISCRETE b TE J> • bbsa^ai 0Q3Ü47Ü BU K436-800A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended lor use in Switched Mode Power Supplies SMPS , motor control, welding,

BU826A

Abstract: BU826 BD227 FL01 5A/M39029/BU826A
Contextual Info: N AMER PHILIPS/DISCRETE b TE D • bb53T31 0020314 4fl7 H A P X BU826 BU826A , SILICON DARLINGTON POWER TRANSISTOR M o n o lith ic high voltage npn D arlin g to n c irc u it w ith integrated speed-up diode in a plastic SOT93 envelope, intended fo r fast sw itching ap p lica tio n.

1ehj3

Abstract: BUK581-60A Transistor 8d4
Contextual Info: N AUER PHILIPS/DISCRETE bRE D • bb53S31 DDaDflaQ 604 * A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fieid-effect power transistor in a plastic envelope

2051B

Abstract: BUW11 SII-020 BUW11A IEC134
Contextual Info: N AMER PHILI P S / D I S C R E T E b'iE D • Jl bb53= 31 0020515 165 H A P X BUW11 BUW11A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn po w er transistors in a S O T 9 3 envelope, intended fo r use in converters, inverters, switching regulators, m o to r co ntrol systems etc.

BUK416-100AE

Abstract: YT150 30444 BUK416-100BE BUK416-1OOAE mkp-x
Contextual Info: N AMER P H I L I P S / D I S C R E T E L^E D • G03D440 DET HIAPX Product Specification Philips Semiconductors BU K416-1OOAE/BE PowerM OS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device Is intended for use in

ECG transistor replacement guide book free

Abstract: Burr-Brown Application Note AN-165 philips ecg replacement guide DC-DC Converter Burr-Brown 700 tl2272 BB IS0107 Tubes Catalog SDM857KG transistor manual substitution ecg book FREE DOWN design a 60hz notch filter
Contextual Info: BURR-BROWN APPLICATIONS HANDBOOK B U R R - BROW N l B B < B u rr-B ro w n 1C A p p l i c a t i o n s H andbook LI-459 1994 Burr-Brown Corporation Printed in USA Burr-Brown Corporation International Airport Industrial Park Mailing Address: PO Box 11400

capacitor 1c8

Abstract: c17 dual mos transistor ai 757 BLF547 175B
Contextual Info: bbS3^31 0 0 3 0 1 bU BID M AP X Philips Semiconductors Product specification UHF push-pull power MOS transistor N BLF547 AMER P H IL IP S /D IS C R E T E b * iE ]> PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability

8085 memory organization

Abstract: intel 8086 bus buffering and latching 8284 intel microprocessor architecture pin diagram of ic 8088 8288 bus controller Hardware and Software Interrupts of 8086 and 8088 microprocessors interface 8086 to 8155 intel mcs-85 user manual how to interface 8085 with 8155 intel iapx 88
Contextual Info: in t e i IF ^ iy M G M lV iAPX 88/10 8088 8-BIT HMOS MICROPROCESSOR 8-Bit Data Bus Interface • 24 Operand Addressing Modes 16-Bit Internal Architecture ■ Byte, Word, and Block Operations Direct Addressing Capability to 1 Mbyte of Memory ■ 8-Bit and 16-Bit Signed and Unsigned