BUW13 Search Results

BUW13

Abstract: BUW13A buw13a philips semiconductor BA102 BUW13A-S Philips BUW13A
Contextual Info: Product specification Philips Semiconductors BUW13; BUW13A Silicon diffused power transistors High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended fo r use in converters, inverters, sw itching regulators, m oto r co n tro l systems etc.

BUW131H

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW131H DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 450V APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits.

buw13a philips semiconductor

Abstract: buw13a BUW13 S0T93 BUW1 buw13a philips
Contextual Info: Product specification Philips Semiconductors Silicon diffused power transistors BUW13; BUW13A High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

41ba

Abstract: BUW13AF BUW13F UBC098 sot199
Contextual Info: Product specification Philips Semiconductors BUW13F; BUW13AF Silicon diffused power transistors High-voltage, high-speed, glass-passivated npn power transistor in a SOT199 envelope intended fo r use in converters, inverters, switching regulators, motor control systems, etc.

Contextual Info: • DEVELOPMENT DATA fc>bS3T31 001=1037 fi ■ 11 BUW133 SERIES This data sheet contains advance information and specifications are subject to change without notice. N AMER PHILIPS/DISCRETE 2SE D T -33-j3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in SOT93 envelope, intended for use in very fast

131H

Abstract: BUW131 BUW131A BUW131H W 502 131a
Contextual Info: II DEVELOPMENT DATA • bbS3<=i31 OO^D21 4 " BUW131 SERIES This data sheet contains advance information and specification! are subject to change w ithout notice. I I _ N AMER PHILIPS/DISCRETE 2SE D _ T - 33 - / 3 NPN SILICON POWER TRANSISTORS

cd 3313

Abstract: BUW132 BUW132A BUW132H IEC134 L100 npn transistors 400V
Contextual Info: •I DEVELOPMENT DATA fcib53T31 Q Q n D S T ■ I BUW132 SERIES' T his d a ta s h e e t c o n ta in s a d v an ce in fo rm a tio n a n d s p e cific a tio n s a re s u b je c t to ch ange w ith o u t n o tic e . N AMER PHILIPS/ DIS CRETE SSE D ^ T-S3-/3 NPN SILICON POWER TRANSISTORS

buw13a

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# BUW13A Features • • With TO-3PN package Switching regulator applications NPN Silicon Power Transistors Maximum Ratings Symbol V CEO V CBO

Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUW13F; BUW13AF DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. o APPLICATIONS • Converters • Inverters nn • Switching regulators

BUW13AW

Abstract: BUW13W
Contextual Info: Inchange Semiconductor Product Specification BUW13W BUW13AW Silicon NPN Power Transistors DESCRIPTION ・With TO-247 package ・High voltage,high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING See Fig.2

BUW13A

Abstract: BUW13 "BUW13"
Contextual Info: Inchange Semiconductor Product Specification BUW13 BUW13A Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage,high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING See Fig.2

Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bb53T31 0026555 6bl ■ APX BUW13F BUW13AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT199 envelope intended fo r use in converters, inverters, switching regulators, m otor control systems, etc.

1000v, NPN

Abstract: transistor VCE 1000V BUW13A NPN Transistor VCEO 1000V
Contextual Info: NPN BUW13A SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C) Junction Temperature

Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUW13W; BUW13AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. APPLICATIONS • Converters • Inverters • Switching regulators

BUW13AF

Abstract: BUW13F
Contextual Info: Inchange Semiconductor Product Specification BUW13F BUW13AF Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFa package ・High voltage;high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING See Fig.2

BUW131

Abstract: BUW131A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUW131/A DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 450V (Min)-BUW131 500V (Min)-BUW131A APPLICATIONS ·Designed for use in very fast switching applications in

transistor K 1413

Abstract: buw13a BUW13 discrete time control systems
Contextual Info: N AUER PHILIPS/DISCRETE II bbS3*î31 □□EÖS47 715 I IAPX BUW13 BUW13A b^E SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn pow er transistors in a SOT93 envelope, intended fo r use in converters, inverters, sw itching regulators, m o to r c o n tro l systems etc.

tsv 518

Abstract: BUW133 BUW133A BUW133H 133h
Contextual Info: t,b53^31 0 0 1 ^ 0 3 7 fl • DEVELOPM ENT DATA BUW133 SERIES This data sheet contains advance information and specifications are subject to change without notice. N AMER P H I L I P S / D I S C R E T E 2SE D . T -3 3 -J 3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in SOT93 envelope, intended for use in very fast

BUW32

Abstract: BUW132 BUW132H BUW132A IEC134 L100 132h
Contextual Info: bbS3T3i DEVELOPMENT DATA c ia n c ia i i • BUW132 SERIES' This data sheet contains advance in fo rm a tio n and specifications are subject to change w ith o u t notice. N AMER PHILIPS/DISCRETE ESE D ^ T -S 3 -/5 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in SOT93 envelope, intended for use in very fast

BUW13AF

Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUW13F; BUW13AF DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. o APPLICATIONS • Converters • Inverters nn • Switching regulators

BUW13AW

Abstract: BUW13W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUW13W; BUW13AW Silicon diffused power transistors Product specification File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors BUW13W; BUW13AW

BUW13AF

Abstract: BUW13F
Contextual Info: SavantIC Semiconductor Product Specification BUW13F BUW13AF Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High voltage;high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING See Fig.2

BUW13AW

Abstract: BUW13W
Contextual Info: SavantIC Semiconductor Product Specification BUW13W BUW13AW Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·High voltage,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING See Fig.2 PIN

BUW133

Abstract: BUW133A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUW133/A DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 450V (Min)-BUW133 500V (Min)-BUW133A APPLICATIONS ·Designed for use in very fast switching applications in