BTA64 Search Results

MMBTA13

Abstract: MMBTA14 MMBTA63 MMBTA64
Contextual Info: MMBTA13 / MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Complementary PNP Types Available M M BTA63 / M M BTA64 Ideal for Medium Power Amplification and Switching

Contextual Info: 35E D • A23b320 0Q172Ô4 2 « S I P PNP Silicon Darlington transistors SMBTA 63 SIEMENS/ SPCL, SEMICONDS SM BTA64 High collector current High DC current gain Type Marking Ordering code or versions in bulk Ordering code for versions on 8 mm-tape Package

Contextual Info: MMBTA13 I MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • • • • Epitaxial Planar Die Construction Complementary PNP Types Available M M B TA 63 / M M BTA64 Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 •

BTA64

Abstract: BTA63
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MMBTA63LT1 BTA64LT1* PNP Silicon COLLECTOR 3 'Motorola Preferred Device EMITTER 2 MAXIMUM RATINGS Rating Sym bol Value Unit VCES -3 0 Vdc C o lle c to r-B a s e Voltage VCBO -3 0 Vdc E m itte r-B a se Voltage

PMBTA14

Abstract: PMBTA13
Contextual Info: Philips Semiconductors Product specification NPN Darlington transistors PMBTA13; PMBTA14 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 base • High DC current gain (min. 10000). 2 e m itte r 3 co lle cto r APPLICATIONS

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

Contextual Info: MMBTA63 I BTA64 PNP SURFACE MOUNT DARLINGTON TRANSISTOR Features • • • • Epitaxial Planar Die Construction Complementary NPN Types Available M M B TA 13 / M M BTA14 Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 •

PMBTA64

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBTA63; BTA64 PNP Darlington transistors Product specification Supersedes data of 1997 Apr 16 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Jul 21 PHILIPS Philips Semiconductors Product specification

Contextual Info: S EM IC O N D U C T O R MMBTA63/64 TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R G E N E R A L PUR PO SE A PPLICATION. D A RLIN G TO N T RA N SISTO R. DIM 2.9310.20 B 1.3010.20/-0.15 C M A X IM U M RA TING Ta=25°C SYMBOL CHARACTERISTIC Collector-Base

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

smd 2t1

Abstract: PMBTA64 smd transistor 2t1 MARKING CODE SMD IC marking p2U PMBTA63 2T1 SOT-23 sot-23 MARKING CODE 2T1
Contextual Info: • bbSBTai □□2SficlLi 355 M A P X N AMER P HI L IP S/DI SCRETE PMBTA63 BTA64 b?E i> P-N-P SMALL-SIGNAL DARLINGTON TRANSISTORS P-N-P small-signal da rlin g to n transistors in a m icro m in ia tu re SM D envelope SOT-23 . Designed p rim a rily fo r p re a m p lifie r in p u t a pplications requiring high in p u t impedance.

BTA64

Abstract: sot 23 mark 2v
Contextual Info: S E M IC O N D U C T O R tm MPSA64 BTA64 SOT-23 Mark: 2V PZTA64 B SOT-223 PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum RâtinÇjS

BTA13

Abstract: marking code SG transistors PMBTA14 PMBTA13
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S H U T PMBTA13; PMBTA14 NPN Darlington transistors Product specification Supersedes data of 1997 Apr 18 Philips Sem iconductors 1999 Apr 29 PHILIPS Philips Semiconductors Product specification NPN Darlington transistors PMBTA13; PMBTA14

BTA64

Contextual Info: Tb M O T O R O L A SC Í X S T R S / R F> 6367254 MOTOROLA SC DE I t 3 t ? a S 4 □DöfiOhJ. ä 96D 8 2 0 8 1 CXSTRS/R, F D M A X I M U M R A T IN G S Sym bol V alue U n it V CES 30 Vdc C ollector-Base Voltage VCBO 30 Vdc Em itter-Base Voltage Ve b o 10

2SC9014

Abstract: BEC npn 2SC9013 SOT-23 BTA43 BTA70 BA811 2SC1623L6 BT3904 BTA42 BT5551
Contextual Info: SOT-23 SMD Products Photograph of Products: Performance and Characteristics: NPN Silicon General Purpose Power Transistors Type Ptot Ic VCEO mW (mA) (V) hFE Polar 123 Type Ptot Ic VCEO (mW) (mA) (V) hFE Polar 123 2SC1623L3 225 100 40 60～90 BEC BCW60A 225

BSR12

Abstract: PXTA14 ul sot-23 PMBT6427
Contextual Info: 97 Surface M ount Devices Switching Transistors cont. Ul LL Ratings Type Package v CEO v CBO V V min./max. at Iq /V c E *C mA m A /V v CE(sat) t (max) max. at lc /lB on/off at Iç /lg V mA/mA ns mA/mA Pinout See Section VII PNP PMBT3640 BSR12 BSR18 BSR18A

BTA64LT1

Contextual Info: M AXIM UM RATINGS Rating Symbol Value Unit C o llecto r-Em itter Voltage V cES - 30 Vdc C o llecto r-Base Voltage VCBO - 30 Vdc Em itter-Base Voltage Ve b o -1 0 Vdc 'c -500 m Adc Symbol Max Unit PD 225 mW 1.8 mW/°C r #j a 556 eC/W PD 300 mW 2.4 mW/°C r<