A23B320 Search Results

Contextual Info: 32E V m A23b320 PNP Silicon High-Voltage Transistor Q O lb ö S S 3 « S IP BFN 21 SIEMENS/ SPCLi SEMICONDS T- 21-0,3 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage

Contextual Info: 35E D • A23b320 0Q172Ô4 2 « S I P PNP Silicon Darlington transistors SMBTA 63 SIEMENS/ SPCL, SEMICONDS SM BTA64 High collector current High DC current gain Type Marking Ordering code or versions in bulk Ordering code for versions on 8 mm-tape Package

Contextual Info: 32E D • Ô53b320 □ 01711=1 1 ■ SIP BSP 297 SIPMOS N Channel MOSFET SIEMENS/ SPCLi SEMICONDS T - M - O S * • SIPMOS - enhancement mode • Drain-source voltage Vis = 200V • Continuous drain current l 0 - 0.6A • Drain-source on-resistance fWon> = 2 .0 0

Contextual Info: 35E D • 823b32Q QGlb'ìbS T « S I P NPN Silicon RF Transistor BFQ 81 SIEMENS/ SPCLi SEMICONDS _ • For low-noise amplifiers up to 2 GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 to 20 mA.

lge 673

Abstract: TRANSISTOR cq 802
Contextual Info: BEE D • 053b3E0 □017Q3C] 0 H S I P NPN N Silicon RF Transistor SIEMENS/ SPCL-. SEMICONDS ^ ^ BFR 193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • fr = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: 32E D • 02 3b 32G 001bñ43 7 ■ NPN Silicon High-Voltage Transistors SIEM EN S/ SPCL-, SIP BFN16 BFN18 T - 3 Í- 2 3 SEMICONDS . • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage

BB804

Contextual Info: 32E D • ö23bBSG GQ]»bS7fl 3 M S I P Silicon Dual Tuning Diode BB 804 SIEMENS/ SPCLi SEMICONDS • • • • • _ Application In FM tuners Monolithic chip with common cathode for perfect tracking of both diodes Uniform “ square law" C-V characteristics

Contextual Info: 32E D • 053b32G 001b720 2 « S IP PNP Silicon AF Transistors _ S I E M E N S / • • • • • SPCL-, BCX 69 T ' 2 1 - 2 3 _ SEMICONDS For general AF applications High collector current High current gain Low collector-em ltter saturation voltage

Contextual Info: 32E D • Ö53b320 PNP Silicon RF Transistor Q01b744 S «SIP BF 579 SIEMENS/ SPCLi SEMICONDS r - 3 i- 1 7 • Suitable for low distortion, low noise VHF/U HF amplifier and UHF oscillator applications in TV tuners • High transition frequency of 1.6 GHz at typical operating current of 10 mA

4032k60

Abstract: 3225k30 CU4032K250
Contextual Info: SIEMENS/ SPCL-, SEMICONDS M4E D • flS3fci32G QQ17M11 S « S I P "r-ti-as* SIEMENS SURFACE MOUNT METAL OXIDE VARISTORS S u rfa c e M o u n t V a risto rs fo r applications requiring o v e rv o lta ge p rote ctio n at op erating voltage levels a s low a s 4V and a s high a s 3 0 0 V AC RM S . Available

Contextual Info: 32E D • Ö23b320 O G l b U l S « S I P NPN Silicon RF Transistor -p_ ^ | « ^ 3 .S IE M E N S / SPCLi SEMICONDS _ 64 • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 70 to 150 mA. TVpe Marking