BT 35 F TRANSISTOR Search Results

Q68000-A4334

Contextual Info: UT 32E D • fi23b3S0 QQlVSl'l 5 « S I P NPN Silicon Switching Transistors SIEMENS/ SP C L i SEMICONDS _ SMBT 2222 SMBT 2222 A r - 3 5 " -;f • • • High D C current gain 0.1 to 500 mA Low collector-emitter saturation voltage Complementary types: S M B T 2907, S M B T 2907 A PNP

siemens 250 87

Contextual Info: 32E D • A23b32G 001724^ □ « S I P PIMP Silicon Transistors SIEMENS/ SPCL-, SEMICONDS _ • For A F input stages and driver applications • High current gain • Low collector-em itter saturation voltage • Low noise between 30 Hz and 15 kHz

3904S

Abstract: wi fi marking code transistor HK
Contextual Info: SIEMENS SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 ^ ^ • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SM BT 3906S (PNP)

Bt 35 transistor

Abstract: Bt 35 F transistor
Contextual Info: MCC BC847AT, BT, CT
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# NPN Surface Mount Small Signal Transistor 150mW Features • • • Epitaxial Die Construction Complementary PNP Type Available BC857AT,BT,CT

Contextual Info: MCC TM Micro Commercial Components BC847AT, BT, CT
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# NPN Surface Mount Small Signal Transistor 150mW Features • • • Epitaxial Die Construction

NPN transistor 2n2222A plastic package to116

Abstract: SP3725QDB BT2907A 2N5146 2N3244 2N3245 2N3252 2N3253 2N3444 2N3467
Contextual Info: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient P q Type Polarity One Both Side Sides mW mW VCB Volts Vce Volts V eb Volts Min/Max Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts Package

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC847AT, BT, CT NPN Surface Mount Small Signal Transistor 150mW Features x x x x Epitaxial Die Construction

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC847AT, BT, CT NPN Surface Mount Small Signal Transistor 150mW Features x x x x Epitaxial Die Construction

transistor f420

Abstract: transistor BJ 115 F420 transistor t514 TRANSISTOR ZT 5551 2SK67A transistor bt 667 TCA561 2S30 T010
Contextual Info: NEC j m^Tiytn A Junction Field Effect Transistor 2SK67A E C M 4 > tf- ? > X N-Channel Silicon Ju n ctio n Field Effect Transistor ECM Im pedance C onverter W-mm/ P A C K A G E D IM E N S IO N S o M 'm m t T t o Unit : mm t ItMMTto OECM-i > o Y - h 2 .9 ± 0.2

Contextual Info: MCC TM Micro Commercial Components BC857AT, BT, CT
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x x • PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Epitaxial Die Construction For Switching and AF Amplifier Applications

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC847AT, BT, CT Features NPN Surface Mount Small Signal Transistor 150mW • • Halogen free available upon request by adding suffix "-HF"

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC847AT, BT, CT NPN Surface Mount Small Signal Transistor 150mW Features • Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: MCC TM Micro Commercial Components BC847AT, BT, CT
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features NPN Surface Mount Small Signal Transistor 150mW • • Halogen free available upon request by adding suffix "-HF"

3904

Abstract: tr 3904 TR 3906 PNP SM Transistor 3904 transistor marking s1a 3904 SOT23 BT3904 sot23 3904 4007S S1A SOT23
Contextual Info: SIEM EN S NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 100 mA • Low collector-em itter saturation voltage SMBT 3904 • Com plem entary type: SM BT 3906 PNP Type Marking Ordering Code (tape and reel) PinCContigui ation 1 3 2 Package1*

transistor F370

Abstract: t430 transistor T591 transistor T600 t514 TRANSISTOR ic mt 5380 transistor T700 ir43 2SC1674 Transistor 2sC1674
Contextual Info: NEC j m ^ T iv rx A ij F M f a - t R F , M IX . , h ^ C O N V . , X ^ O S C ./ B NPN Silicon Epitaxial Transistor FM Tuner RF, MIX., CONV., OSC. o F M f a - j- c o m m 'it m m , M W L&&&M , m m m m W B 0 / PACKAGE D IM EN SIO N S t i r Unit : mm f t M T ’t o

Y25n120d

Contextual Info: MOTOROLA O rder this docum ent by M G Y25N120D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G Y 25N 120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 6 4

2SC2582

Contextual Info: Power Transistors 2SC2582 2SC2582 Silicon NPN Epitaxial Planar Type Package Dimensions AF Power Amplifier • Feature • L arge collector pow er dissipation Pc Absolute Maximum Ratings (Ta=25°C) Item Symbol Collector-base voltage ' Value Unit VcBO 45 V

Contextual Info: •I bbSB'iai 00B47DQ =557 « A P X N AMER PHILIPS/DISCRETE BF820 BF822 b7E D y v SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope intended for application in thick and thin-film circuits. Primarily intended for use in telephony and professional communication equipment. P-N-P

bly89a

Abstract: Transistor bly89a
Contextual Info: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every

Contextual Info: i_L N AUER PHILIPS/BISCRETE DbE D • bbS3T31 QOlSlb? 1 RV2833B5X r - 3 3 - D MICROWAVE POWER POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.

2SC385A

Abstract: TRANSISTOR AS PLANAR PIP
Contextual Info: 5 / U D > N P N i e 5 > * 2/ ? ; i / 7 b -* fê h SILICON NPN EPITAXIAL PLANAR TRANSISTOR O f u ; VHF ° TV VHP O s c i l l a t o r A p p l i c a t i o n s • 5 :/S >;*9 2 s c 385A U n i t i n mm Mtiitix-t ; V q s c = 55mV M i n . ( f = 244MHz) h ? y i? •> g

Contextual Info: tUN 11 » « DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS t.b53T31 0035171 507 P h lllp i Sem iconductor! Product specification UHF power transistor FEATURES • SMD encapsulation • Gold m etallization ensures excellent reliability. BLT80 QUICK REFERENCE DATA

2N3014 TO-18

Abstract: 2N5769 2N2369 2N2369A 2N3013 2N5224 BSV52 BSX39 MMBT4274 MMBT5134
Contextual Info: NATL SEfllCOND DISCRETE 22E D Bi ^501130 QG377ÖQ 2 • *7Zi2'7~0/ NPN Switching Transistors by Ascending Vceo Vceo (V) Min Vcbo (V) Min Vce(8at) (V) M ax @ Ic/lb (mA) Cob (pF) M ax Ft (MHz) M ax *(off) (ns) M ax M M BT5134 PN5134 10 10 20 20 0.25 0.25 10/1.0

MPS835

Contextual Info: MPS835 SILICON NPN SILICON ANNULAR SWITCHING TRANSISTOR NPN SILICON SWITCHING TRANSISTOR . . . designed for high-speed saturated switching applications. • Collector-Emitter Breakdown Voltage — BV c e O ~ 20 Vdc (Min) @ lc “ 10 mAdc • High Current-Gain—Bandwidth Product —