BT 35 F TRANSISTOR Search Results

Q68000-A4334

Contextual Info: UT 32E D • fi23b3S0 QQlVSl'l 5 « S I P NPN Silicon Switching Transistors SIEMENS/ SP C L i SEMICONDS _ SMBT 2222 SMBT 2222 A r - 3 5 " -;f • • • High D C current gain 0.1 to 500 mA Low collector-emitter saturation voltage Complementary types: S M B T 2907, S M B T 2907 A PNP

siemens 250 87

Contextual Info: 32E D • A23b32G 001724^ □ « S I P PIMP Silicon Transistors SIEMENS/ SPCL-, SEMICONDS _ • For A F input stages and driver applications • High current gain • Low collector-em itter saturation voltage • Low noise between 30 Hz and 15 kHz

3904S

Abstract: wi fi marking code transistor HK
Contextual Info: SIEMENS SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 ^ ^ • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SM BT 3906S (PNP)

Bt 35 transistor

Abstract: Bt 35 F transistor
Contextual Info: MCC BC847AT, BT, CT
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# NPN Surface Mount Small Signal Transistor 150mW Features • • • Epitaxial Die Construction Complementary PNP Type Available BC857AT,BT,CT

Contextual Info: MCC TM Micro Commercial Components BC847AT, BT, CT
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# NPN Surface Mount Small Signal Transistor 150mW Features • • • Epitaxial Die Construction

BTS 3900 a

Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1
Contextual Info: Insulated Gate Bipolar Transistors IGBT The IGBT is a com bination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of M OSFETs. A dvantages to the user: • rugged, short-circuit-proof device

NPN transistor 2n2222A plastic package to116

Abstract: SP3725QDB BT2907A 2N5146 2N3244 2N3245 2N3252 2N3253 2N3444 2N3467
Contextual Info: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient P q Type Polarity One Both Side Sides mW mW VCB Volts Vce Volts V eb Volts Min/Max Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts Package

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC847AT, BT, CT NPN Surface Mount Small Signal Transistor 150mW Features x x x x Epitaxial Die Construction

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC847AT, BT, CT NPN Surface Mount Small Signal Transistor 150mW Features x x x x Epitaxial Die Construction

transistor f420

Abstract: transistor BJ 115 F420 transistor t514 TRANSISTOR ZT 5551 2SK67A transistor bt 667 TCA561 2S30 T010
Contextual Info: NEC j m^Tiytn A Junction Field Effect Transistor 2SK67A E C M 4 > tf- ? > X N-Channel Silicon Ju n ctio n Field Effect Transistor ECM Im pedance C onverter W-mm/ P A C K A G E D IM E N S IO N S o M 'm m t T t o Unit : mm t ItMMTto OECM-i > o Y - h 2 .9 ± 0.2

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC847AT, BT, CT NPN Surface Mount Small Signal Transistor 150mW Features x x x x Epitaxial Die Construction

BT diode

Abstract: ECONOPACK mounting instructions bsm 25 gd 1200 n2 bsm 75 gd 120 n2 bsm 50 gd 120 n2 calculation of IGBT snubber siemens igbt BSM 200 GA 120 BSM15GD120DN2 diode bym 26 siemens igbt BSM 100
Contextual Info: Technische Angaben Technical Information SIEMENS 1 Übersicht IGBT-Module 1 O verview IG BT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V,

Contextual Info: MCC TM Micro Commercial Components BC857AT, BT, CT
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x x • PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Epitaxial Die Construction For Switching and AF Amplifier Applications

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC847AT, BT, CT Features NPN Surface Mount Small Signal Transistor 150mW • • Halogen free available upon request by adding suffix "-HF"

Contextual Info: MCC TM Micro Commercial Components BC847AT, BT, CT
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features NPN Surface Mount Small Signal Transistor 150mW • • Halogen free available upon request by adding suffix "-HF"

Contextual Info: SIEMENS SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1 mA to 100m A • Low collector-em itter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package • C om plem entary type: SM BT 3906S (PNP)

3904

Abstract: tr 3904 TR 3906 PNP SM Transistor 3904 transistor marking s1a 3904 SOT23 BT3904 sot23 3904 4007S S1A SOT23
Contextual Info: SIEM EN S NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 100 mA • Low collector-em itter saturation voltage SMBT 3904 • Com plem entary type: SM BT 3906 PNP Type Marking Ordering Code (tape and reel) PinCContigui ation 1 3 2 Package1*

Contextual Info: PMBT2222 PMBT2222A J v _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic package intended for switching and linear appli cations in thick and thin film circuits.

HEF4511

Abstract: HEF4511B HEF4511BD HEF4511BP
Contextual Info: HEF4511B MSI BCD TO 7-SEGMENT LATCH/DECODER/DRIVER The HEF4511B is a BCD to 7-segment latch/decoder/driver with four address inputs D ^ to Dq , an active LOW latch enable input (ID, an active LOW ripple blanking input (BT),an active LOW lamp test input (LT), and seven active HIGH n-p-n bipolar transistor segment outputs (Oa to Og).

transistor F370

Abstract: t430 transistor T591 transistor T600 t514 TRANSISTOR ic mt 5380 transistor T700 ir43 2SC1674 Transistor 2sC1674
Contextual Info: NEC j m ^ T iv rx A ij F M f a - t R F , M IX . , h ^ C O N V . , X ^ O S C ./ B NPN Silicon Epitaxial Transistor FM Tuner RF, MIX., CONV., OSC. o F M f a - j- c o m m 'it m m , M W L&&&M , m m m m W B 0 / PACKAGE D IM EN SIO N S t i r Unit : mm f t M T ’t o

BLV95

Contextual Info: N AMER P H I L I P S / D I S C R E T E LT E D bt>S3^31 □DSTlbM 03fl A BLV95 U.H.F. POWER TRANSISTOR N.P.N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters for the 9 0 0 M H z com m unication band. Features • m ulti base structure and emitter-ballasting resistors fo r an o ptim um temperature profile

Y25n120d

Contextual Info: MOTOROLA O rder this docum ent by M G Y25N120D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G Y 25N 120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 6 4

ITE35C12

Abstract: ITE35F12
Contextual Info: Si GEC PLESSEY PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS4313 -1.2 IT E 3 5 F 1 2 /IT E 3 5 C 1 2 POWERLINE N-CHANNEL IGBT WITH OPTIONAL ULTRAFAST DIODE The ITE35X12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

BDX45

Abstract: BDX47 BDX42 BDX43 BDX44 BDX46
Contextual Info: BDX45 BDX46 BDX47 P-N-P SILICON PLANAR DARLINGTON TRANSISTORS Silicon p-n-p planar Darlington transistors fo r industrial switching applications, e.g. print hammer, solenoid, relay and lamp driving. Encapsulated in a TO-126 plastic envelope w ith collector connected