A23B32G Search Results
A23B32G Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
siemens 250 87Contextual Info: 32E D • A23b32G 001724^ □ « S I P PIMP Silicon Transistors SIEMENS/ SPCL-, SEMICONDS _ • For A F input stages and driver applications • High current gain • Low collector-em itter saturation voltage • Low noise between 30 Hz and 15 kHz |
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a23b32g23b3200g17254siemens 250 87 | |
BCX70JContextual Info: BEE D • ÔS3h3B0 0Q3.bb?ä ? ISIP. NPN Silicon AF Transistors SIEMENS/ SPCLi SEMICONDS BCW 60 BCX 70 T-3^-17 • • • • • For AF input stages and driver applications High current gain Low coilector-em itter saturation voltage Low noise between 30 Hz and 15 kHz |
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a23b32gbcw60bcx70102khz+1 | |
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Contextual Info: 32E D • ö23b3S0 ' SIPMOS P Channel MOSFET QQ17177 1 « S IP ^ BSS192 SIEMENS/ SPCL-i SEMICONDS_ _ • SIPMOS - enhancement mode • Draln-source voltage Vb» = -240V • Continuous drain current / D = -0.15A • Draln-source on-resistance |
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23b3s0qq17177bss192-240v+4 | |
RTM 866 - 485Contextual Info: 32E J> • 023ti32Q OGlb^QH 1 « S I P NPN Silicon RF Transistor BFP 93A .SIEMENS/ SPCLi S E M I C O N D S _ • For broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 to 30 mA. E CECC-type in preparation: CECC 50002/. ESD: Electrostatic discharge sensitive device, observe handling precautions! |
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023ti32qbfp93a62702-fot-143+1 | |
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Contextual Info: TT 3EE D • Ö23b320 OOlbSöl 3 ISIP BB 811 Silicon Tuning Diode SIEMENS/ SPCL-. SEMICONDS _ T—07—16 C a th o d e • Frequency range up to 2 GHz; special design for use in TV-sat indoor units Type M arking O rdering code taped Package BB 811 white/T. |
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23b320q62702-b478d-123a23b32g+1 | |
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Contextual Info: 35E D • fl23b32Q GG1722S ö M S I P PNP Silicon Switching Transistors SIEM ENS/ S P C L i • • • SMBT2907 SEMIC0N] S ' High DC current gain: 0.1 to 500 mA Low collector-emitter saturation voltage Complementary types: SMBT 2222, SMBT 2222 A NPN) C Type |
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fl23b32qgg1722ssmbt2907q68000-a4336+6 | |
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Contextual Info: 32E D • fi23b32Q QOlbSlb 3 » S I P Silicon Switching Diodes T '0 2 -U BAS 78A. BAS 78D _ SIEMENS/ SPCL-, SEMICONDS _ • Switching applications • High breakdown voltage Type M arking O rdering co d e 12-m m tape Package* BAS 78A |
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fi23b32qq62702ot-223bas78d | |
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Contextual Info: 32E D • 623b320 QDlblSl T « S I P NPN Silicon RF Transistor o , .t-. BFQ 29P SIEMENS/ SPCLi SEMICONDS _ • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. £ CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions! |
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623b320bfq29p62702-fot-23+1 | |
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Contextual Info: 35E D • 023b3SG NPN Silicon RF Transìstor 0Q lbflñ3 & « S IP BFP 81 _SIEMENS/ SPCLi SEMICONDS f-3<- 1*7_ • For low-noise amplifiers up to 2 GHz at collector currents from 0.5 to 25 mA. S CECC-type In preparation: CECC 50002/. ESD : Electrostatic discharge sensitive device, observe handling precautions! |
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023b3sg62702-f1ot-143-j250 |