ITE35X12 Search Results

ITE35C12

Abstract: ITE35F12
Contextual Info: Si GEC PLESSEY PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS4313 -1.2 IT E 3 5 F 1 2 /IT E 3 5 C 1 2 POWERLINE N-CHANNEL IGBT WITH OPTIONAL ULTRAFAST DIODE The ITE35X12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

Contextual Info: Si GEC PLESSEY PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS4313 -1.2 IT E 3 5 F 1 2 /IT E 3 5 C 1 2 POWERLINE N-CHANNEL IGBT WITH OPTIONAL ULTRAFAST DIODE The ITE35X12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for