BSS76 Search Results

BSS76 Functional Equivalents (1)

The Functional Equivalents tab will give you options that are likely to match the same function of BSS76, but it may not fit your design.

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Part Number	Manufacturer	Composite Price	Description
BSS76G4	TT Electronics Power and Hybrid / Semelab Limited	Check for Price	500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA, HERMETIC SEALED, METAL, TO-18, 3 PIN

BSS76 Datasheets (7)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BSS76	Central Semiconductor	PNP SILICON HIGH VOLTAGE TRANSISTOR	Original	PDF	74.42KB	2
BSS76	Semelab	High Voltage PNP Silicon Transistor - Pol=PNP / Pkg=TO18 / Vceo=300 / Ic=0.5 / Hfe=35-150 / fT(Hz)=50M / Pwr(W)=0.5	Original	PDF	16.07KB	2
BSS76	Motorola	European Master Selection Guide 1986	Scan	PDF	43.34KB	1
BSS76	Unknown	Diode, Transistor, Thyristor Datasheets and more	Scan	PDF	73.85KB	1
BSS76	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	104.72KB	1
BSS76	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	95.04KB	1
BSS76S	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	104.72KB	1

BSS76 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BSS74 Abstract: jc-70 BSS75 BSS76 Contextual Info: DATA SHEET BSS74 BSS75 BSS76 PNP SILICON HIGH VOLTAGE TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR BSS74 series types are hermetically sealed PNP small signal transistors manufactured by the epitaxial planar process designed for high voltage amplifier applications.	Original	BSS74 BSS75 BSS76 BSS74 jc-70 BSS75 BSS76	PDF
Contextual Info: BSS76 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 300V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products	Original	BSS76 O206AA) 10/30m 19-Jun-02	PDF
pnp 300v Abstract: BSS76 Contextual Info: P BSS76 LAB MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) HIGH VOLTAGE PNP SILICON TRANSISTOR 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) FEATURES 12.7 (0.500) min. • Hermetic Metal Package 0.48 (0.019) 0.41 (0.016) dia. • Screening Options Available	Original	BSS76 O-206AA) -300V -50mA -100V -10mA pnp 300v BSS76	PDF
BU104 Abstract: BSX21 BU103 8SS44 Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o Description BS250CSM4 8SS44 BSS44 CECC BSS50 BSS51 BSS52 BSS60 BSS61 BSS62 BSS71 BSS72 BSS73 BSS74 BSS74R BSS75 BSS76 BSS77 BSS78 BSV15 BSV16 BSV17 BSV60 BSV64 BSV64 CECC BSV64-SM BSV91 BSW66 BSW66CECC	OCR Scan	BS250CSM4 8SS44 BSS44 BSS50 BSS51 BSS52 BSS60 BSS61 BSS62 BSS71 BU104 BSX21 BU103	PDF
Contextual Info: , One, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BSS76 MECHANICAL DATA Dimensions in mm (inches) ~5.84 (0.230) (0.209)' HIGH VOLTAGE PNP SILICON TRANSISTOR 4.95 (0.195) 4.52 . (0.178) r FEATURES	Original	BSS76 O-206AA) -300V -30mA -20mA 20MHz 300us -10mA -50mA	PDF
BSS74 MOTOROLA Abstract: BSS74 BSS76 BSS75 Contextual Info: BSS74 thru BSS76 MAXIMUM RATINGS Rating BSS 74 Symbol BSS 75 BSS 76 Unit Vdc C o lle cto r-E m itte r V o ltage v CEO -2 0 0 -2 5 0 -3 0 0 C ollector-B ase Voltage v CBO -2 0 0 -2 5 0 -3 0 0 Vdc E m itter-B ase V o ltage v EBO - 5 .0 Vdc C o lle ctor C u rrent — C ontinuous	OCR Scan	BSS74 BSS76 O-206AA) -106V BSS74Ã BSS75â BSS76â b3b72S4 BSS74 MOTOROLA BSS75	PDF
Contextual Info: BSS76 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 300V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products	Original	BSS76 O206AA) 10/30m 2-Aug-02	PDF
BSS76 Abstract: 1N9143 Contextual Info: MOTOROLA Order this document by BSS76/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors PNP Silicon COLLECTOR BSS76 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage v CEO -3 0 0 Vdc Collector-Base Voltage v CBO -300 Vdc Emitter-Base Voltage	OCR Scan	BSS76/D BSS76 BSS76 1N9143	PDF
Contextual Info: BSS76 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 300V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products	Original	BSS76 O206AA) 10/30m 16-Jul-02	PDF
2N2369At Abstract: 2N4237 High-Voltage Amplifiers 2N3546 2N3495 2N4033 MM4001 2N5679 MOTOROLA 2n5680 motorola 2N3114 Contextual Info: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F	OCR Scan	MIL-19500 i2N5415* 2N3637# MM4001 2N3635 2N3634# 2N3495 2N5680 MM4000 MM5007 2N2369At 2N4237 High-Voltage Amplifiers 2N3546 2N4033 2N5679 MOTOROLA 2n5680 motorola 2N3114	PDF
MMBF112L Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211 Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty	OCR Scan	06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211	PDF
transistor mosfet buv18a Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9	Original		PDF
BC337 BC547 Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the	Original	MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM	PDF
MSC2404 Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage	Original	MSA1022-CT1 Emitte218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72	PDF

MM4003 Abstract: 2N4033 2N2905 BC177 2N3495 2N5680 transistor 2N4033 2N3227 2N3506 2N3725 Contextual Info: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F	OCR Scan	MIL-19500 BSV16 BC161 2N2904A# 2N2905AI BC160 2N29O40 2N2905# 2N2605# 2N3486 MM4003 2N4033 2N2905 BC177 2N3495 2N5680 transistor 2N4033 2N3227 2N3506 2N3725	PDF
triac zd 607 Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.	OCR Scan	SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845	PDF
stencil Abstract: BC237 automatic heat detector project report BC393 equivalent Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and	Original	BAT54T1 Ju218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 stencil BC237 automatic heat detector project report BC393 equivalent	PDF
BC237 Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device	Original	SC-70/SOT-323 Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 level shifter 2N5401 2771 040 0002 MUN5214T1	PDF
bs170 replacement Abstract: BC237 BC30 transistor K 2056 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)	Original	BS170 226AA) DS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 bs170 replacement BC237 BC30 transistor K 2056	PDF
transistor bc237 bc337 Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage	Original	BC337 BC338 226AA) Junction218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor bc237 bc337 replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT	PDF
BC237 Abstract: MPS-A70 equivalent Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSA70 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Emitter – Base Voltage	Original	MPSA70 226AA) CHARACTERI218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 MPS-A70 equivalent	PDF
bc182 equivalent 2n2907 Abstract: bc183 equivalent BC237 BC182 bc184 BF245 bc184 equivalent Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC182 BC183 BC184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage VCBO	Original	BC182 BC183 BC184 BC184 226AA) Junction218A MSC1621T1 MSC2404 bc182 equivalent 2n2907 bc183 equivalent BC237 BF245 bc184 equivalent	PDF
transistor MPS5771 Abstract: BC237 bfw4 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit	Original	MMBD914LT1 236AB) DE218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 transistor MPS5771 BC237 bfw4	PDF
P2d MARKING CODE Abstract: H2A transistor ev 2816 BC237 transistor 2N2906 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA92T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 300 Vdc Collector–Base Voltage VCBO –300 Vdc Emitter–Base Voltage	Original	PZTA92T1 261AA ELECTRI218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 P2d MARKING CODE H2A transistor ev 2816 BC237 transistor 2N2906	PDF

BSS76 Search Results

BSS76 Functional Equivalents (1)

BSS76 Datasheets (7)

BSS76 Datasheets Context Search

BSS74

pnp 300v

BU104

BSS74 MOTOROLA

BSS76

2N2369At

MMBF112L

transistor mosfet buv18a

BC337 BC547

MSC2404

MM4003

triac zd 607

stencil

BC237

bs170 replacement

transistor bc237 bc337

BC237

bc182 equivalent 2n2907

transistor MPS5771

P2d MARKING CODE