BSS7 Search Results

Contextual Info: SMD Type SMD Type Product specification BSS79,BSS81 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low collector-emitter saturation voltage. 1 0.55 High DC current gain: 0.1mA to 500 mA. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1

BSS79C

Contextual Info: SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR ISSUE 2 - SEPTEMBER 95 Q_ P A R T M A R K IN G D E TA ILS - B S S 79B - CE B SS79C - CF BSS79B BSS79C ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BOL C o lle c to r-B a s e V o lta g e C o lle c to r-E m itte r V o lta g e

BSS73DCSM

Contextual Info: BSS73DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

BSS74

Abstract: jc-70 BSS75 BSS76
Contextual Info: DATA SHEET BSS74 BSS75 BSS76 PNP SILICON HIGH VOLTAGE TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR BSS74 series types are hermetically sealed PNP small signal transistors manufactured by the epitaxial planar process designed for high voltage amplifier applications.

bss7

Contextual Info: \oducta, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BSS72 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Parameter Symbol VCBO VCEO VEBO lo IB Pw VT, Unit V V V mA mA W W °C Viliw

Contextual Info: BEE D • û53b32Q QG1712b b « S I P NPN Silicon Switching Transistors 3 S'” I Ì SIEMENS/ S P C L i • • • SEMKONDS BSS79 BSS 81 _ High DC current gain Low collector-emitter saturation voltage Complementary types: B S S 80, BSS 82 PNP

BSS70

Abstract: BSS70R bss69r BSS69 DSA003680
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS BSS69 BSS70 ISSUE 2 – SEPTEMBER 1995 ✪ PARTMARKING DETAILS — BSS69 BSS70 BSS69R BSS70R - L2 L3 L6 L7 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40

BSS72S

Abstract: BSS75S
Contextual Info: 3QE D T^S'ìSB? QG31G57 b SGS-THOMSON * t I BSS72S IO S G S- T H O M S O N HIGH VOLTAGE AMPLIFIER PRELIM INARY DATA DESCRIPTION The BSS72S is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-18 metal case. It is designed for high voltage amplifier and switching applications at

BSS71CSM

Contextual Info: BSS71CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

BSS71DCSM

Contextual Info: BSS71DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

BSS71

Contextual Info: BSS71 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products

BSS74CSM

Contextual Info: BSS74CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

BSS75

Contextual Info: BSS75 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 250V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products

BSS71S

Abstract: BSS74S
Contextual Info: 3DE 3> • 7^537 0031025 J>S - 5 ■ f Z 7 SGS-THOMSON A T f s I L K M « ! _ B S S 7 1 S S G S-THOMSON HIGH VOLTAGE AMPLIFIER DESCRIPTION The BSS71S is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-18 metal case. It is designed for

BSS77

Contextual Info: BSS77 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products

BSS73

Contextual Info: BSS73 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 300V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products

BSS71 MOTOROLA

Abstract: BSS71 1N914
Contextual Info: MOTOROLA Order this document by BSS71/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN Silicon BSS71 COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 200 Vdc Collector– Base Voltage VCBO

BSS71 MOTOROLA

Abstract: BSS71
Contextual Info: MOTOROLA Order this document by BSS71/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN Silicon BSS71 COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector-Em itter Voltage v CEO 200 Vdc Collector-Base Voltage v CBO 200 Vdc Em itter-Base Voltage

BSS79

Abstract: BSS81
Contextual Info: Transistors IC SMD Type NPN Silicon Switching Transistors BSS79,BSS81 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low collector-emitter saturation voltage. 1 0.55 High DC current gain: 0.1mA to 500 mA. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1

Contextual Info: , One, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BSS76 MECHANICAL DATA Dimensions in mm (inches) ~5.84 (0.230) (0.209)' HIGH VOLTAGE PNP SILICON TRANSISTOR 4.95 (0.195) 4.52 . (0.178) r FEATURES

BSS73CSM

Contextual Info: BSS73CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

BSW66

Abstract: BU208A BSW67 BLY49 BLY49A BLY50 BLY50A BSS15 BSS33 BSS50
Contextual Info: 4flE D • fll331fl7 0 0 0 0 4 5 2 SEMELABL 271 ■ S H L B _ SEMELAB BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number BI.YA8A BLYA9 BLYA9A BLY50 BLY50A BSS15 BSS17 BSS33 B.SSAA BSS50 BSS51 DSS52 BSS60 BSS61 BSS62 BSS71 DSS72 BSS73

L6 SOT-23

Abstract: marking code 20L SOT-23 BSS69R BSS69 BSS70R L6 sot 23 FMMT2369 BSS66 BSS70 BSS67
Contextual Info: I FERRANTI BSS69 BSS70 T 11sem iconductors L PNP S ilicon Planar M e d i u m P o w e r S w i t c h i n g Transistors DESCRIPTION These devices are intended for general purpose switching applications. Complementary to the BSS66 and BSS67 Encapsulated in the popular SOT-23 package, these

BSS79C

Abstract: npn switching transistor 60v partmarking 6 Cc BSS79B DSA003680
Contextual Info: SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR ISSUE 2 – SEPTEMBER 95 ✪ BSS79B BSS79C PARTMARKING DETAILS - BSS79B - CE BSS79C - CF C E B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO