BR EL Search Results

BR-B5131K-05V

Abstract: BR-B2131K-12V BR-B3131K-15V BR-B4131K-15V BR-B4531K-05V BR-B4534-05V BR-B5134-05V BR-B6131K-05V BR-B6134-05V BR-BX1131K-12V
Contextual Info: SINCE 1981 Chip Package Part No. BR-B5131K-05V BR-B4531K-05V T-1 BR-B6131K-05V Profile 1.0" Lead BR-B2131K-12V BR-BX1131K-12V 3 BR-B3131K-15V BR-B4131K-15V BR-B5134-05V BR-B4534-05V T-13/4 BR-B6134-05V Standard 1.0" Lead BR-B2134-12V BR-BX1134-12V 5 BR-B4534-15V

D-30A

Abstract: D40A
Contextual Info: ELECTRICAL CHARACTERISTICS Tc = 25°C Peak Pulse Current for 10µS 120 PPS I(BR)1, and I(BR)2 TA<40°C ITRM µA Breakover Voltage Breakover Voltage Symmetry Dynamic Breakback Voltage V(BR)1, and V(BR)2 Volts [V(BR)1] - [V (BR)2] [ ∆V±] VOLT Max. VOLT Min.

ASTM-B33

Abstract: ASTM-B-33 EIA-468-B
Contextual Info: VESTAL PART NUMBER BR/OS100-22-LSO BR/OS100-22-HSO BR/OS100-22-LDO BR/OS100-22-HDO BR/OS100-24-LSO BR/OS100-24-HSO BR/OS100-24-LDO BR/OS100-24-HDO AWG 22 22 22 22 24 24 24 24 WIRE DIAMETER WD .025" .025" .025" .025" .020" .020" .020" .020" LEAD SPACE C/C

BR Connector

Abstract: DIN 41612 connector RE334-LF
Contextual Info: HF-board RE334-LF - EPOXY fibre-glass FR4 1.5 mm double-sided 35 µm CU pth <br>- hot air leveling (HALleadfree)<br><br>- 32 x 53 single-hole conductor 2.0 mm² <br>- hole spacing 2.54 x 2.54 mm < br>- hole dia 1.0 mm <br>- connector 32/64/96-channel <br>- DIN 41612 type C <br>- the

Contextual Info: LN Mouser Electronics Related Product Links 534-PC104-BR - Keystone Electronics PC104-BR

Contextual Info: Mouser Electronics Related Product Links 806-K85X-ED-9S-BR - Kycon K85X-ED-9S-BR

PC21002

Contextual Info: Data Sheet, Rev. 1.4, Jun. 2005 HYS72D64301[G/H]BR–[5/6]–B H YS72D64301[G/H]BR–[5/6]–B HYS72D128xxx[G/H]BR– HYS72D128xxx[G/H]BR–[5/6/7]–B [5/6/7]–B HYS72D256220[G/H]BR–[5/6/7]–B HYS72D256220[G/H]BR– HYS72D256320[G/H]BR–[5/6/7]–B [5/6/7]–B

HYS72D128300

Abstract: DDR400 PC3200R-30331-C0 pc2100r 25330 z
Contextual Info: Data Sheet, Rev. 1.2, Dec. 2004 HYS72D128300[G/H]BR–[5/6/7]–B H YS72D128300[G/H]BR– [5/6/7]–B HYS72D128321[G/H]BR–[5/6/7]–B HYS72D128321[G/H]BR– HYS72D256220[G/H]BR–[5/6/7]–B [5/6/7]–B HYS72D256320GBR–[6/7]–B HYS72D256220[G/H]BR–

BEG-161-270

Abstract: BEG-162-270 BEG162-270 27010 31855 aerzen D-31855 Aerzen aerzen 31855 BRIDGE rectifier power supply 162270
Contextual Info: Brückengleichrichter 6-polig BEG-16a-aaa Lesen Sie diese Dokumentation, bevor Sie mit den Arbeiten beginnen! E307886 Technische Daten Brückengleichrichter B2 Gleichrichterart Die 6-poligen Brückengleichrichter dienen zur Versorgung von elektromagnetischen Gleichstrombremsen und -kupplungen

PC3200R-30331-C0

Contextual Info: Data Sheet, Rev. 1.1, Sep. 2004 HYS72D128300[G/H]BR–[5/6/7]–B H YS72D128300[G/H]BR– [5/6/7]–B HYS72D128321[G/H]BR–[5/6/7]–B HYS72D128321[G/H]BR– HYS72D256220[G/H]BR–[5/6/7]–B [5/6/7]–B HYS72D256320GBR–[6/7]–B HYS72D256220[G/H]BR–

2N6724

Abstract: 2N6725 MPS8724
Contextual Info: 2N6724/MPS6724/2N6725/MPS6725 National Semiconductor 2N6724 2N6725 MPS6724 MPS6725 NPN Darlington Transistor Electrical Characteristics t a = 25°C unless otherwise noted Parameter Symbol Min Max Units OFF CHARACTERISTICS V BR CES v (BR)CBO V(BR)EBO 'CBO 'e bo

b1000c

Abstract: 1000C FZT956
Contextual Info: ELECTRICAL CHARACTERISTICS at Tamb 25°C unless otherwise ❑ SYMBOL MIN. TYP. ‘( BR Ci30 -220 Collector-Emitter Breakdown Voltage V(eR)~,-R Collector-Emitter Breakdown Voltage —— . .-— v(BR)~, o Emitter-Base Voltage V(BR}EEIO PARAMETER Collector-Base

ZTX1151

Contextual Info: ZTX1151A ELECTRICAL CHARACTERISTICS at Tamb= 25°C unless otherwise stated . VALUE SYMBOL CONDITIONS. TYP. MAX. v (BR)CBO -45 -95 V Ic-IOOpA Collector-Emitter Breakdown Voltage V(BR)CES -40 -90 V lc-100|iA Collector-Emitter Breakdown Voltage V(BR)CEO -40

BCW67CR

Abstract: BCW67AR BCW68GR BCW67 BCW68HR BCW65 BCW66 BCW67A BCW67B BCW67C
Contextual Info: BCW67 BCW68 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW67 BCW68 V(BR)CEO -32 -45 BCW67 BCW68 V(BR)CES -45 -60 Emitter-Base Breakdown Voltage V(BR)EBO -5 Collector-Emitter Cut-off Current

ITS4100

Abstract: Commital CONTACT UNI4883 31045 20-27P TS3100
Contextual Info: Series ITS ITS 3100 A BR and ITS 4100 A (BR) ITS 3100 R (BR) and ITS 4100 R (BR) ITS ITS ITS Reverse Reverse Bayonet Bayonet Reverse Bayonet Assemblies Assemblies Assemblies Front Panel Mount Square Flange Receptacle Assembly with Backshell for Termination of UNI4883 Rubber Conduits

TS3100

Abstract: Commital CONTACT ITS4100 UNI4883
Contextual Info: Series ITS ITS 3101 A BR and ITS 4101 A (BR) ITS 3101 R (BR) and ITS 4101 R (BR) S 3100 (ZLF) (ZLF) TS 3100AA(NO) (PG)and andITS ITS4100 4100AA(NO) (PG) nel3100 Mount Square Flange Receptacle Assembly Panel Mount Square Flange Receptacle S A (NO) and ITS

TMPTA06

Abstract: TMPT2222A marking 1p TMPTA42 marking 1R NPN TMPT6427 tmpt3904 BEC npn V7560
Contextual Info: NPN TRANSISTORS SO T-23/TO -236A B ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain *CB0 V|BR CBO V|BR)CEO Device Type Marking V) TMPT2222A 1P 75 40 TMPT3904 1A 60 40 TMPT4401 2X 60 TMPT5089 1R TMPT6427 TMPTA06 TMPTA42 1D V (BR)EBO Max. V cb hFE

tp4093

Abstract: TMPT5401 mA 723 TMPT2907 TP4221
Contextual Info: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type v BR CBO V ’ (BR)CEO (BR)EBO Max. @ V C8 (V) (V) (V) (nA) (V) v CE(MI) DC Current Gain K* @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)

Contextual Info: ALLEGRO MICROSYSTEMS INC LIE ]> • 0504330 000b3A7 ■ A L 6R PNP TRANSISTORS TO-92ITO-226AA V*3 W and ‘T P DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C 'cBO DC Current Gain v CEIMl] * le V Max. v BR CBO V y(BR>CEO * (BR)EBO Max. @ v CB hFE K e

Contextual Info: K B P C / BR 1005 / 305 THRU KBPC / BR SEMICONDUCTOR 110 tech n ica l data FORWARD INTERNATIONAL ELECTRONICS LTD. / 310 TECHN/CAL SPEC/HCAT70NS O F S/NGLE-PHASE S/L/CON BR/DGE RECT/F/ER VOLTAGE RANGE 50 to 1000 Volts CURRENT - 3.0 Amperes - FEATURES * Surge overfoa rating: 50 Amperes peak

Contextual Info: Anschlussbelegung / PIN assignment T568A nach / according to TIA/EIA 568-C.2 0.69 in. 14,2 17,4 13,9 (0.55 in.) W/G G BR W/BR W/O O BL W/BL Anschlussbelegung / PIN assignment T568B nach / according to TIA/EIA 568-C.2 BR W/BR G BL W/BL (0.54 in.) (2.02 in.)

Contextual Info: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type BR CBO V ’ (BR)CEO (V) (V) v DC Current Gain (BR)EBO Max. @ V C8 (V) (nA) (V) K* v CE(MI) @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)

2N4401 EBC

Abstract: JEDEC 2N3904 TP2222A
Contextual Info: NPN TRANSISTORS TO -92/TO -226AA >3 ‘2N’ and ‘TP’ DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain ^CBO V CE sat 'c V (BR)CBO V (BR)CEO V (BR)EBO Max. Device Max. Type (mA) (V) (V) (V) (nA) @ V cb (V) hFE hFE @ l c @ V CE Max.

MPSU95

Abstract: D40D11 D41D11 D44H10 D45H10 MJE15028 THC40D11 THC41D11 THD44H10 THD45H10
Contextual Info: ALLEGRO MICROSYSTEMS INC bbE i • DSDH33Ô Q00bS17 23Ö * A L G R BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = + 25°C A 'cBO 'c D evice A lle g ro T yp e T yp e Max. Polarity mA V T (BR)CBO (V) V ’ (BR)CEO (V) 'cEO V ¥ (BR)EBO Max. @ V CB