BR EL Search Results

Contextual Info: TO-92/TO-226AA “ 23 ‘2N ’ and ‘TP’ DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO DC Current Gain V CE sat *T •c Device Type Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. @ v CB hFE hre (mA) (V) (V) (V) (nA) (V) @ lc c»*1 V (V) (mA) (MHz) (mA)

MSD602

Contextual Info: LESHAN RADIO COMPANY, LTD. NPN General Purpose Amplifier Transistor Surface Mount MSD602–RT1 COLLECTOR 3 3 2 1 2 BASE 1 EMITTER Symbol V BR CBO V(BR)CEO V(BR)EBO IC Value 60 50 7.0 500 Unit Vdc Vdc Vdc mAdc IC(P) 1.0 Adc Symbol PD TJ T stg Max 200 150 –55 ~ +150

Contextual Info: ELECTRICAL CHARACTERISTICS at I At = 25°C V BR CBO VIBRJCEO V(BR)EBO Max. Device Type Marking (V ) TMPT2907A 2F 60 60 TMPT3906 2A 40 40 TMPT4403 2T 40 40 5.0 TMPT5087 2Q 50 50 _ TMPT5401 2L 160 150 5.0 TMPTA56 2G 80 80 4.0 100 NOTES: (V) v CB h FE 'c @ V CE Max. @ lc

Contextual Info: ALLEGRO MICROSYSTEMS INC blE P • D50M33A D00b3fl3 m M W A L G R NPN TRANSISTORS TO-92/TO-226AA W and T F DEVICE TYPES ELECTRICAL CHARACTERISTICS at T. = 25 C V CE ut D C Current Gain 'c B O •c Max. v (BR)CBO V (BR1CEO V (BR)EBO Max. Device Type (mA) (V)

ZXMC6A09DN8

Abstract: ZXMC6A09DN8TA ZXMC6A09DN8TC
Contextual Info: ZXMC6A09DN8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 60V; RDS(ON) = 0.045 ; ID= 5.1A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure

ZXMHC6A07T8

Abstract: ZXMHC6A07T8TA ZXMHC6A07T8TC
Contextual Info: ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel V BR DSS = 60V; RDS(ON) = 0.300 ; ID= 2.5A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.425⍀; ID= -2.2A DESCRIPTION This new generation of trench MOSFETs from Zetex utilises a unique structure

Contextual Info: 1UI5 BRÀWINÔ IS UNPUBLISHED.- COPYRIGHT - RMÀ5EB PÖR PUBUdATlöN- ~ — !- BY TYCO ELECTRONICS CORPORATION. LOC G AU " RIGHT5 RESERVED.

Contextual Info: 1UI5 BRÀWINÔ IS UNPUBLISHED.- COPYRIGHT - RMÀ5EB PÖR PUBUdATlöN- ~ — !- BY TYCO ELECTRONICS CORPORATION. LOC G AU" RIGHT5 RESERVED.

TS16949

Abstract: ZXTN2018F ZXTP2027F ZXTP2027FTA
Contextual Info: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number ZXTN2018F Description C Advanced process capability and package design have been used to

DO-204AL

Abstract: P4KE440 P4KE440CA
Contextual Info: P4KE Series TRANSZORB Transient Voltage Suppressors V BR Unidirectional 6.8 to 540V V(BR) Bidirectional 6.8 to 440V Peak Pulse Power 400W d * e d n nge e t x E e Ra DO-204AL (DO-41 Plastic) g Features a t l Vo • Plastic package has Underwriters Laboratory

107D

Contextual Info: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BR-HY033-12V-TRB ● Features: ●Package Dimensions: 1. Emitted Color : Yellow 2. Lens Appearance: Water Clear. 3. Mono-color type. 4. 3.2x1.6x1.1mm 1206 standard package. 5. Suitable for all SMT assembly methods.

107D

Contextual Info: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BR-HY033-15V-TRB ● Features: ●Package Dimensions: 1. Emitted Color : Yellow 2. Lens Appearance: Water Clear. 3. Mono-color type. 4. 3.2x1.6x1.1mm 1206 standard package. 5. Suitable for all SMT assembly methods.

D-68623

Abstract: HTZ170C2K ZC 2800 diode rectifier
Contextual Info: HTZ170C Series IF AV = 10 A VRRM = 2800 V HTZ170C2.8K HTZ170C2.4K HTZ170C2K Electronic Devices Minimum Avalanche Voltage V(BR)R Repetitive Peak Type Number LARONTROL High Voltage Diode Rectifier Module 2800 2400 2000 3000 2600 2200 CIRCUIT DIAGRAM -V R R M _

BCW65 ec

Abstract: BCW66H BCW65AR
Contextual Info: Not Recommended for New Design Please Use BCW66H BCW65 BCW66 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER Collector-Emitter Breakdown Voltage SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW65 BCW66 V(BR)CEO 32 45 V ICEO=10mA ICEO=10mA

300C

Abstract: IRG4CH40SB IRG4PH40S
Contextual Info: PD-91799A IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C 1200 V Size 4 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

2SA1007

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1007 DESCRIPTION •High Current Capability ·Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min.) APPLICATIONS ·Designed for audio and general purpose applications.

2SK1187

Abstract: FM20
Contextual Info: 2SK1187 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Ta = 25ºC Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS VGSS ±20 V I GSS ±12 ID ±48 (Tch ID (pulse) 150ºC) 35 (Tc = 25ºC) PD min (Ta = 25ºC) Ratings typ

2SK1179

Contextual Info: 2SK1179 External dimensions 2 . FM100 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS (Ta = 25ºC) Ratings typ min Unit max 500 Conditions V I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500

FKV460

Contextual Info: MOS FET FKV460 under development Electrical Characteristics Test Conditions V(BR) DSS ID = 100µA, VGS = 0V VGS = +20V VGS = –10V VDS = 40V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss

Contextual Info: BR Series Stackpole Electronics, Inc. Bare Element Current Sense Resistor Resistive Product Solutions Features: • • • • • • • • • • 1, 3 and 5 watts ±1%, ±2% or ±5% tolerance Resistance wire TCR ±20ppm/ºC Low inductance versions available for high frequency applications

5L00

Contextual Info: BR Series Stackpole Electronics, Inc. Bare Element Current Sense Resistor Resistive Product Solutions Features: • • • • • • • • • • 1, 3 and 5 watts ±1%, ±2% or ±5% tolerance Best available TCR = 20ppm/ºC Low inductance versions available for high frequency applications

IRGCC40UE

Abstract: IRGPC40U
Contextual Info: PD-9.1426 IRGCC40UE IRGCC40UE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

IRGCC50FE

Abstract: IRGPC50F
Contextual Info: PD-9.1425 TARGET IRGCC50FE IRGCC50FE IGBT Die in Wafer Form C 600 V Size 5 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

IRGCC50KE

Abstract: IRGPC50K
Contextual Info: PD-9.1424 TARGET IRGCC50KE IRGCC50KE IGBT Die in Wafer Form C 600 V Size 5 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage