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Contextual Info: g M OTOROLA M C3346 General Purpose Transistor Array One D ifferentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The MC3346 is designed for general purpose, low power applications for consumer and industrial designs.

DKV3803-30

Abstract: DKV6520 adkv LA 6520 DKV6520-06 DKV6520-12 DKV6525-06 DKV6525-12 dkv3803-23 DKV6522-24
Contextual Info: Silicon Hyperabrupt Tuning Diodes DKV6520 Series ALPHA IN] / S E M I C O N D U C T O R 4fiE D 05Ô5443 Q Q D 1 3 n ITI IALP Features • ■ ■ ■ High to Very High Frequency Operation Capacitance Values of 20 pF to 200 pF at 4 Volts Octave Tuning from 4 to 20 Volts

CA3146P

Contextual Info: MOTOROLA _ _ SEMICONDUCTOR CA3146 TECHNICAL DATA General Purpose Transistor Array GENERAL PURPOSE TRANSISTOR ARRAY One Differentially Connected Pair and Three Isolated Transistor Arrays SILICON M O NOLITHIC IN T E G R A T E D CIRCUIT T he C A 3 1 46 is designed for general purpose, low power applications in the

MPSH81

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF A m plifier Transistor PNP Silicon MPSH81 COLLECTOR Motorola Preferred Device 3 1 BASE 2 EMITTER M AXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO -20 Vdc Collector-Base Voltage VCBO -20 Vdc Emitter-Base Voltage

TO-226-AE

Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA TM O S Sw itching N -C h a n n e l — Enhancem ent MPF930 MPF960 MPF990 3 DRAIN M A X IM U M R A T IN G S Symbol MPF930 MPF960 MPF990 Unit Drain-Source Voltage VD S 35 60 90 Vdc Drain-Gate Voltage V DG 35 60 90 Vdc

Contextual Info: MOTOROLA Order this document by MPQ3725/D SEMICONDUCTOR TECHNICAL DATA Quad Core Driver Transistor MPQ3725 NPN Silicon nil nil raí nil nói mm IvM M otorola Preferred D evice L>^J rvi NPN rvi LU l L i lL i LU LÌJ LsJ ill MAXIMUM RATINGS Rating Collector- Emitter Voltage

Contextual Info: <$£mi-Conc[uckoi ^Pr , inc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 Amplifier Transistor MPS6530 NPN Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS TO-92 Symbol Value Unit Collector- Emitter Voltage

MRF284

Contextual Info: <z/V.e.txr ZPioauati, {Jna. tj 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Advance Information The RF Sub-Micron MOSFET Line MRF284S RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Motorola Transistor 3-252

Abstract: Motorola 3-252
Contextual Info: 4bE D • b3b72S4 QORHTHfl 3 ■ nOTf'FZl-Cft MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR) TECHNICAL DATA 2C3251AHV Chip PNP Silicon Small-Signal Transistor A IM »#####/ . .designed for dc to VHF amplifier and general-purpose switching applications. DiSCr&t&

Contextual Info: MOTOROLA Order this document by MMBV3102LT1/D SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 S ilic o n Tuning D iode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor BCW65ALT1 NPN Silicon CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Symbol Value Unit C ollector-Em itter Voltage VCEO 32 Vdc C ollector-Base Voltage VCBO 60 Vdc E m itter-B ase Voltage

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor PNP Silicon P2N2907A BASE MAXIMUM RATINGS Rating Sym bol Value Unit C olle cto r- Emitter Voltage v CEO -6 0 Vdc C ollector-B ase Voltage VCBO -6 0 Vdc E m itter-B ase Voltage Ve b o -5 .0 Vdc Collector Current — Continuous

MPQ6600A1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Complementary Pair Transistors MPQ6100A MPQ6600A1* NPN/PNP Silicon ¡y. „ryi li l l i l li Lu ill ill ill MPQ6100A TYPE A ra ra ipi«i Ri m m Iv Y I Voltage and Current are negative for PNP Transistors ‘ M o to rola Preferred D ev ice

LTZM

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon M PS3904 COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Symbol Value Unit C ollector-Em itter Voltage VCEO 40 Vdc C ollector-Base Voltage VCBO 60 Vdc E m itter-Base Voltage Rating v EBO 6.0

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZT751T1 PNP Silicon Planar Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the S O T -223 package which is designed for

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Low Voltage Output A m plifier Surface Mount MSD1328-RT1 Motorola Preferred Device COLLECTOR n □ nr 2 1 BASE EMITTER M AXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector-Base Voltage v (BR)CBO 25 Vdc

DO-14

Abstract: KV2301 kv2501 V270l KV2201 KV2604 KV2001 KV2002 KV2202 KV2302
Contextual Info: LO RA L n i C R O U A V E - F S I 0 0 0 0 4 4 1 5T3 s s a o ia o S1E D TU • I ■ g ■I "r 07- VHF HYPERABRUPT TUNING VARACTORS DESCRIPTION VHF Diodes: Ion-implanted, highly reproducible hyperabrupt diodes which allow octave tuning of LC tanks up to 500 MHz or, with a reduced 1.5 to 1 frequency ratio,

PQ3904

Abstract: Transistor 3904 motorola mpq3904
Contextual Info: MOTOROLA Order this document by MPQ3904/D SEMICONDUCTOR TECHNICAL DATA Quad A m p lifier Sw itching Transistor M PQ 3904 NPN Silicon Motorola Preferred Device [Ï4] fill pél Rii lió] m m u \\ [T U ' NPN rvH rvi LU LU LU LU LU LU LU MAXIMUM RATINGS 14 Rating

MBT5551LT1

Abstract: MBT5551L T0236AB
Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA High V oltage T ransistors NPN Silicon MMBT5550LT1 MMBT5551LT1* COLLECTOR 3 ‘M otorola Preferred D evice 2 MAXIMUM RATINGS EMITTER Symbol Value Unit Collector-Emitter Voltage Rating v C EO 140 Vdc Collector-Base Voltage

RIM-IDC24M

Abstract: RIM-IDC24 RIM-IAC15AM RIM-IAC15M RIM-IAC5M RIM-IDC5M rim-idc5 30VDC 90VRMS
Contextual Info: RIM Series Features • • • • • 4KV Optical Isolation Slimline packaging Plugs into standard I/O module mounting board Industry standard color code AC=Yellow, DC=White AC & DC Types Slimline Input Digital Modules D47 | * - 1.700(43.18) »| Case Colors:

MPQ6600A1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Com plem entary Pair Transistors NPN/PNP Silicon MPQ6100A M PQ6600A1* LAJ L rv l rv i [V I MPQ6100A TYPE A r»i [Ï3i nu im lioi rn m Voltage and Current are negative for PNP Transistors ’ Motorola Preferred Device

2N6724

Abstract: 2N6725 MPS8724
Contextual Info: 2N6724/MPS6724/2N6725/MPS6725 National Semiconductor 2N6724 2N6725 MPS6724 MPS6725 NPN Darlington Transistor Electrical Characteristics t a = 25°C unless otherwise noted Parameter Symbol Min Max Units OFF CHARACTERISTICS V BR CES v (BR)CBO V(BR)EBO 'CBO 'e bo

md2219AFHXV

Contextual Info: MD2219AFHXV . CRYSTALONCS , 280S Veterans Highway NPN Silicon Dual Small-Signal Transistors su ite u Ronkonkoma. m y. 1 1779 . . designed for general-purpose switching and amplifier applications. M A X IM U M R A T IN G S Symbol Value Unit Collector-Emitter Voltage

sot-223 body marking D K Q F

Contextual Info: Order this data sheet by BSP62T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP62T1 PNP Silicon Epitaxial Transistor Motorola Preferred Device This PNP small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the