MMBT5550LT1 Search Results

1N914

Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon 3 COLLECTOR MMBT5550LT1 MMBT5551LT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 140 Vdc Collector–Base Voltage V CBO 160 Vdc Emitter–Base Voltage

Contextual Info: High Voltage Transistors NPN Silicon 3 COLLECTOR MMBT5550LT1 MMBT5551LT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 140 Vdc Collector–Base Voltage V CBO 160 Vdc Emitter–Base Voltage V 6.0 Vdc 600 mAdc 3

1N914

Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1
Contextual Info: ON Semiconductort MMBT5550LT1 MMBT5551LT1 High Voltage Transistors NPN Silicon MMBT5551LT1 is a Preferred Device 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 140 Vdc Collector–Base Voltage VCBO 160 Vdc Emitter–Base Voltage

Contextual Info: RECTRON SEMICONDUCTOR MMBT5550LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation 0.225 W(Tamb=25OC) PCM: * Collector current 0.6 A ICM: * Collector-base voltage V(BR)CBO: 160 V * Operating and storage junction temperature range

Contextual Info: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160

MMBT5551LT1G

Abstract: sot-23 Marking M1F 1N914 MMBT5550 MMBT5550LT1G MMBT5551 MMBT5551LT3G
Contextual Info: MMBT5550LT1G, MMBT5551LT1G High Voltage Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage

1N914 SOT-23

Abstract: MMBT550LT1
Contextual Info: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Symbol 5550 5551 Unit Collector −Emitter Voltage Rating VCEO 140 160

1N914

Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1
Contextual Info: ON Semiconductort MMBT5550LT1 MMBT5551LT1* High Voltage Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 140 Vdc Collector–Base Voltage VCBO 160 Vdc Emitter–Base Voltage

MMBT5551LT1

Abstract: motorola S MMBT5551 G1 MMBT5550
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage T ransistors MMBT5550LT1 MMBT5551LT1* NPN Silicon ‘Motorola Preferred Device 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage v CEO 140 Vdc Collector-Base Voltage VCBO 160 Vdc

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5550LT1 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR FEATURES W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.6 A ICM: Collector-base voltage

Contextual Info: SynSEMi SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR MMBT5550LT1 TRANSISTOR NPN FEATURES Power dissipation Pcm : 0225 W (Tamb=25 °C) Collector current ICM: 0.6 A Collector base voltage 160 V Operating and storage junction temperature range

sot-23 Marking M1F

Abstract: MMBT5551LT1G MMBT5550 MMBT5550LT1 MMBT5550LT1G MMBT5551 MMBT5551LT1 MMBT5551LT3 MMBT5551LT3G RB SOT23-3
Contextual Info: MMBT5550LT1, MMBT5551LT1 Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBT5550 MMBT5551 Collector −Base Voltage

MBT5551LT1

Abstract: MBT5551L T0236AB
Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA High V oltage T ransistors NPN Silicon MMBT5550LT1 MMBT5551LT1* COLLECTOR 3 ‘M otorola Preferred D evice 2 MAXIMUM RATINGS EMITTER Symbol Value Unit Collector-Emitter Voltage Rating v C EO 140 Vdc Collector-Base Voltage

Contextual Info: MAXIMUM RATINGS Symbol Value Unit C o llector-E m itter Voltage Rating v CEO 140 Vdc Collector-Base Voltage v CBO 160 Vdc Em itter-Base Voltage Vebo 6.0 Vdc ic 600 m Adc C ollector C urrent — Continuous MMBT5550LT1 MMBT5551LT1* CASE 318-07, STYLE 6 SOT-23 TO-236AB

1N914

Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1 MMBT5551LT1G MMBT5551LT3 5551 SOT-23
Contextual Info: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT5550LT1 1. BASE TRANSISTOR（ NPN ） 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.225 W（Tamb=25℃） Collector current ICM: 0.6

1n914 SOD123

Abstract: sot-23 MARKING CODE G1 Sc59
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors MMBT5550LT1 MMBT5551LT1* COLLECTOR 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 140 Vdc Collector – Base Voltage

1N914

Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1
Contextual Info: MOTOROLA Order this document by MMBT5550LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors MMBT5550LT1 MMBT5551LT1* COLLECTOR 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage

MMBT5551LT1G

Abstract: 1N914 MMBT5550 MMBT5550LT1G MMBT5551 MMBT5551LT3G MMBT5550LT1 4rc10
Contextual Info: MMBT5550LT1G, MMBT5551LT1G High Voltage Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage

2n6517 sot

Contextual Info: Bipolar Transistors High Voltage Transistors > 100 V NPN − MPSW42 − BF393 2N5551 − 2N6517 MPSA42 − BF422 2N5550 2N6515 MMBT6517LT1 − MMBTA42LT1 − MMBTA43LT1 MMBT5551LT1 − MMBT5550LT1 PZTA96ST1 BSP19AT1 PZTA42T1 − BF720T1 MSD42WT1 V(BR)CEO

Contextual Info: ON Semiconductort MMBT5550LT1 MMBT5551LT1 High Voltage Transistors NPN Silicon MMBT5551LT1 is a Preferred Device 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 140 Vdc Collector–Base Voltage VCBO 160 Vdc Emitter–Base Voltage

1N914 SOT-23

Abstract: ic 5550 adc . Circuit Diagram using this IC sot-23 Marking M1F MMBT5550 MMBT5550LT1 MMBT5550LT1G MMBT5551LT1 MMBT5551LT1G MMBT5551LT3 MMBT5551LT3G
Contextual Info: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160

Contextual Info: High Voltage Transistors NPN Silicon 3 COLLECTOR MMBT5550LT1 MMBT5551LT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 140 Vdc Collector–Base Voltage V CBO 160 Vdc Emitter–Base Voltage V 6.0 Vdc 600 mAdc Collector Current — Continuous

sot-23 Marking M1F

Abstract: SMMBT5551 SMMBT5551LT1G SMMBT5551LT3G SMMBT551 MMBT5551LT MMBT5551LT1G mmbt5551l
Contextual Info: MMBT5550L, MMBT5551L, SMMBT5551L High Voltage Transistors NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • COLLECTOR 3 Site and Control Change Requirements