TP918 Search Results

Contextual Info: NPN TRANSISTORS T O -9 2 /T O -2 2 6 A A ‘2N ’ and ‘T F DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain *cao V C E fu t », Ic Device Max. Type mA) v V (8 R )C 6 0 V * (BR)EBO Max. (V) (V) (V) (nA) @ v CB (V) hFE hfE @ lc Min. Max. (m A)

AR5212

Abstract: ar5312 diode 39b2 AR5112 AR5213 AR5211 st c739 FD507 U508-3 AR533 Ct516
Contextual Info: 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams X05 7-1 This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1-1 a Main Board Schematic Sheet 2 of 40(Operation Block Diagram)

RTL8111D

Abstract: PQ2000 up7711 PD8001 kb3925 asus schematic LG lcd backlight inverter RTL8111DL ADP3208J vga nvidia
Contextual Info: 4 3 Reset 2 Off Button PWRGD DOWN CPU, VGA Thermal OVERT# FORCE_OFF# Circuit Daughter Board EC_RST# PWR_SW# 2 D AC_BAT_SYS +5VA +3VA 1 Power On SWITCH EC KB3925 5 PM_RSMRST# VSUS_ON ICH9-M VRMPWRGD C SUSC_EC# From EC 9 +12V +5V +3V +1.8V +1.5V +0.9V GMCH Cantiga

ST T4 D560

Abstract: ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents CICHLID 3 CPU :Intel Yonah 533/667 Merom

54B2

Abstract: HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS

Contextual Info: ALLEGRO MICROSYSTEMS INC blE P • D50M33A D00b3fl3 m M W A L G R NPN TRANSISTORS TO-92/TO-226AA W and T F DEVICE TYPES ELECTRICAL CHARACTERISTICS at T. = 25 C V CE ut D C Current Gain 'c B O •c Max. v (BR)CBO V (BR1CEO V (BR)EBO Max. Device Type (mA) (V)

bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30

bc 7-25 pnp

Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Contextual Info: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K

Contextual Info: SPRAGUE/SEMICOND GROUP T3 D • ÖS13ÖSO 0Ü03SÔS ! 8 5 1 4 0 1 9 SPRAGUE. SEM ICONDS/ IC S 1 ■ 93D 0 35 85 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain IcBO

2N4401 EBC

Abstract: JEDEC 2N3904 TP2222A
Contextual Info: NPN TRANSISTORS TO -92/TO -226AA >3 ‘2N’ and ‘TP’ DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain ^CBO V CE sat 'c V (BR)CBO V (BR)CEO V (BR)EBO Max. Device Max. Type (mA) (V) (V) (V) (nA) @ V cb (V) hFE hFE @ l c @ V CE Max.

Honeywell M6531A1007

Abstract: honeywell M7535A1001 TP939B1002 honeywell ml7420a3006 T7412A1018 C7085A1006 MT4-230-NC T7460B1009 Delta Electronics dps 730 T7414A1019
Contextual Info: Field Devices A L L Y O U N E E D I N H VAC C ON TR OL INCLUDED Product Catalog 2013 Documentation on CD QR Codes Actuators 13 Valves linear 33 Valves rotary 86 Frequency inverters 99 Sensors 110 Thermostats 152 Pneumatic Products 162 Miscellaneous 174 Old products

NEC c317

Abstract: gm73v1892 mt 6252 Resistor Network Rpack 10K transistor NEC D 882 p CRA3A4E103J TP1017 eeprom programmer schematic 24c08 LPT22 m21cr
Contextual Info: TNETX4090 Design Manual SPWU023 October 1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that

BA41-00695A

Abstract: TP1274 CONN-50P-FPC Socket AM2 samsung 30 pin lvds diagram 25a44 SMD AC P27 CY28447 samsung electronics ba41 GND103
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS

ZD602

Abstract: B628 ALC258 TP2121 BA41-00509A bd631 TP2274 zd601 S2R51 ati M22P
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D FIRENZE C B CPU :Dothan533

ALC122

Abstract: ZD602 ALC258 TP2121 B628 ZD601 TP728 smd code w14 tp2307 Socket AM2
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D FIRENZE C CPU :Dothan533 Chip Set :ALVISO & ICH6-M

Contextual Info: ALLEGRO MICROSYSTEMS 8514019 INC SPRAGUE. T3 » • G50433Ö G003SÖS SEM ICO ND S/ ICS 93D G ■ AL6R 03 585 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘T P ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C *CBO Max. ^ BRICBO V r CEO V(BR)EBO Max. (a ^CB »W hFE Oi ic

R305 finger print scan module

Abstract: BSS84_3P KBC1021 RS485M ICS951418 CN602 INVENTEC ATI-RS480M U615 S8004
Contextual Info: TAOS 2.0 SI-1 Build 11/11/2005 EE DATE DATE POWER DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : TAOS20 SIZE CODE A3 CS SHEET DOC. NUMBER REV Model_No 1 OF X01 68 Table Of Content

2N5551 equivalent

Abstract: 2N3856 equivalent 2n5551 2n3877 2N3856A 2N3843A 2N3844A 2N3854A 2N3855 MPS-H34
Contextual Info: Econoline SPRAGUE HIGH-FREQUENCY >- PD os Ta = 25 C « _> Silicon S E P T R Transistors AMPLIFIERS/OSCILLATORS D -C C U R R E N T G A IN h FE C o nditions V (BR) V (BR) V (BR) •cBO CEO V o lts E BO V o lts mA Max. <mA) .050 4 5 2 (mW) C BO V o lts M PS-H32

55b1 SMD

Abstract: 55B3 56B3 AM3 1A 12B nvidia NV43 audio woofer TP730 k4d553235f-vc2a smd code capacitor c435 S3F944
Contextual Info: 4 3 SAMSUNG PROPRIETARY 2 1 THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D CICHLID II Sheet 1. COVER Sheet 2 - 5. DIAGRAM Block/Power & ANNOTATIONS

TAOS20

Abstract: Inventec 5A40V KBC1021 12C887 ATI-RS480M R305 finger print scan module RS480M TP926 12c885
Contextual Info: TAOS 2.0 MV Build - Final 05/09/2006 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV SIZE = 3 FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : TAOS20 SIZE CODE A3 CS SHEET DOC. NUMBER REV 1310A20305 1 OF A02 69 Table Of Content

B30C300

Abstract: 29A4 samsung electronics 10K 34C1 TP678 gfx E3 diode diode 39b2 TP730 NC7SZ175P6X_NL HDR-10P-SMD
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS

HDR-10P-1R-SMD

Abstract: pm965 ICH8M 54C3 TP81-1 LE88CLPM samsung kbc 37 TV samsung lcd Schematic circuit diagram SLB9635TT1.2 54B4 TP1230
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D LISBON C B DRAW Ma Xinzhi : : : : : : Lisbon-P55

M452A1006

Abstract: M4450A1009 honeywell ml7420a3006 ML7420A DN100 PN16 honeywell M7420A CE0085AR0013 V5077 VF20T M7420A
Contextual Info: Field Devices Product Catalog 2010 Field Devices Find out more For more information visit our product catalog at http://ecc.emea.honeywell.com A l l Y O U N E E D I N H VA C C O N T R OL Product Catalog 2010 Automation and Control Solutions Honeywell GmbH