BR 8050 Search Results

Contextual Info: TO-92 Plastic-Encapsulate Transistors 8050S TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1. EMITTER 0.625 W (Tamb=25℃) 2. COLLECTOR Collector current 0.5 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050S TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1. EMITTER 0.625 W (Tamb=25℃) 2. COLLECTOR Collector current 0.5 A ICM: Collector-base voltage 40 V V(BR)CBO:

8050SS

Abstract: datasheet of ic 555 IC 555 8050SS Datasheet datasheet ic 555 transistor 8050ss
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050SS ） TRANSISTOR（ NPN TO—92 FEATURES Power dissipation PCM : 1 W （Tamb=25℃） 1.EMITTER Collector current 2. COLLECTOR ICM: 1.5 A Collector-base voltage V BR CBO : 40

8050S Transistor

Abstract: 8050s NPN transistor 500ma TO-92
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050S TRANSISTOR（ NPN ） TO—92 FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050S TRANSISTOR（ NPN ） TO—92 FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range

8050SS

Abstract: transistor 8050ss 8050SS Datasheet 8050ss TRANSISTOR equivalent 8050S 8050ss TRANSISTOR
Contextual Info: 8050SS 8050SS TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1 1. EMITTER W (Tamb=25 ) Collector current ICM: 2. COLLECTOR 1.5 A 3. BASE Collector-base voltage V(BR)CBO: 40 V 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

8050S Transistor

Abstract: 8050s ic 8050s 8050s equivalent 8050s* Transistor
Contextual Info: 8050S 8050S TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1. EMITTER 0.625 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃

SS8050LT

Abstract: 8050LT1
Contextual Info: DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR NPN FEATURES Power dissipation PCM: W(Tamb=25℃) 0.3 Collector current ICM: 1.5 A 40 V Collector-base voltage V(BR)CBO: Operating and storage junction temperature range

Contextual Info: 8050S NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 3.5 ±0.2 4.55±0.2 4.5±0.2 FEATURES Power dissipation 0.625 W Tamb=25 C 14.3 ±0.2 PCM: Collector current

NPN transistor 8050s

Abstract: 8050S 8550S
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050S TO-92 TRANSISTOR NPN FEATURES z Complimentary to 8550S z Collector current: IC=0.5A 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

8050S Transistor

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 8050S TRANSISTOR NPN FEATURES 1.EMITTER z Complimentary to 8550S z Collector Current: IC=0.5A 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: TO-92 8050SS Plastic-Encapsulate Transistors TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM : 1 W 2. COLLECTOR (TA=25℃) 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 8050SS Plastic-Encapsulate Transistors TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM : 1 W 2. COLLECTOR (TA=25℃) 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 8050SS TRANSISTOR NPN 1. EMITTER 2. COLLECTOR FEATURES z General Purpose Switching and Amplification. 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

8050S

Contextual Info: 8050S NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 1.25MAX 3. BASE 2.92 MIN 12.7 6.35 MIN MIN 0.41 0.41 0.53 0.48 Seating Plane Features Complimentary to 8550S Collector current: IC=0.5A 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: ST 8050U NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 40

NPN transistor 8050d

Abstract: transistor br 8050d 8050c transistor transistor br 8050 NPN transistor 8050C BR 8050 BR 8050 D
Contextual Info: 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

NPN transistor 8050d

Abstract: BR 8050 D 8050c transistor transistor br 8050 8050 TRANSISTOR PNP 8050c BR 8050 transistor 8050d st 8050d BR 8050D
Contextual Info: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

NPN transistor 8050d

Abstract: 8050c transistor BR 8050 D 8050 pnp transistor st 8050d transistor 8050d BR 8550 BR 8050 8050C 8050D
Contextual Info: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

BR 8050 D

Abstract: NPN transistor 8050d BR 8050 transistor 8550 st 8050d transistor br 8050 8050 TRANSISTOR PNP 8050c 8050 pnp transistor 8050d
Contextual Info: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

NPN transistor 8050d

Abstract: BR 8050 D transistor br 8050 8050c transistor BR 8050 8050c 8050 TRANSISTOR PNP st 8050d BR 8050D 8050 pnp transistor
Contextual Info: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

S8050L

Abstract: 8050L S8050LT1 S8050LT1-J3Y
Contextual Info: M C C SOT-23 P la s tic -E n cap s u la te T ra n s is to rs ^ S 8050L T1 TR A N SISTO R N PN 1 BASE 2 .EMITTER 3.COLLECTOR A “ ' FEATURES - o. Rower dissipation Pcm : 0.3 W (Tamb=25°C ) Collector current lCM: 0.5 A Collector-base voltage

NPN transistor 8050d

Abstract: BR 8050 D transistor br 8050 st 8050d 8050c 8050 pnp transistor 8050c transistor BR 8050 S 8050 transistor 8050d
Contextual Info: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

NPN transistor 8050d

Abstract: BR 8050 D 8050c transistor transistor BR 8050 st 8050d 8050d BR 8050 TRANSISTOR 8050D transistor S 8050 8050 pnp transistor
Contextual Info: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As