SS8050LT1 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR NPN SOT-323 FEATURES 1. BASE 2. EMITTER W (Tamb=25℃) 1. 30¡ À0. 03 Collector current 1.5 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range

SS8050LT1

Contextual Info: M CC SO T-23 P la stic -E n c a p su la te T r a n s is t o r s ^ ^ 1.B A SE 2.E M IT T E R 3.C O L L E C T O R SS8050LT1 TRANSISTOR NPN FEATURES Hgm ardissipation PCM: 0.625 W (Tamb=25*C ) ffifjfirfftr current 1.5 A ICM: Cotieetòr-base voltage V(br )cbo :40V

Contextual Info: SS8050LT1 NPN 3 * “G” Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 6.0 1500 625 5.0 200 SS8050LT1=Y1 25 0.1 40 100 6.0 100 E=20 Vdc, I E= 0 ) 40 5.0 WEITRON http://www.weitron.com.tw O 0.1 u 0.1 u 0.1 u SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

Contextual Info: SS8050LT1 NPN 3 1 2 SOT-23 V CEO Value 25 40 6.0 1500 625 5.0 200 SS8050LT1=Y1 25 0.1 40 100 6.0 100 E=20 Vdc, I E= 0 40 5.0 WEITRON http://www.weitron.com.tw O 0.1 u 0.1 u 0.1 u SS8050LT1 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted) (Countinued)

SS850

Abstract: amplifier 800mA SS8550LT1 Y2 TRANSISTOR
Contextual Info: SS8550LT1 SEMICONDUCTOR TECHNICAL DATA 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to SS8050LT1 * Collector Current :Ic= -800mA * High Total Power Dissipation :Pc=625mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃ PNP EPITAXIAL SILICON TRANSISTOR

SS8050LT

Abstract: 8050LT1
Contextual Info: DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR NPN FEATURES Power dissipation PCM: W(Tamb=25℃) 0.3 Collector current ICM: 1.5 A 40 V Collector-base voltage V(BR)CBO: Operating and storage junction temperature range

SS8050LT1

Abstract: marking H
Contextual Info: SS8050LT1 SS8050LT1 TRANSISTOR NPN FEATURES SOT-323 1. 25¡ À0. 05 Power dissipation 1. 01 REF 1. BASE 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current ICM: 1.5 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range

IC800

Abstract: y1 npn SS8050LT1
Contextual Info: SS8050LT1 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 6.0 1500 625 5.0 200 SS8050LT1=Y1 25 0.1 40 100 6.0 100 E=20 Vdc, I E= 0 40 5.0 WEITRON http://www.weitron.com.tw ) O 0.1 u 0.1 u 0.1 u SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

marking y1 sot-23

Abstract: SS8550LT1 Y1 SS8050LT1 amplifier 800mA
Contextual Info: SS8050LT1 SEMICONDUCTOR TECHNICAL DATA 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to SS8550LT1 * Collector Current :Ic= 800mA * High Total Power Dissipation :Pc=625mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃ NPN EPITAXIAL SILICON TRANSISTOR

sot-23 Marking 1Hc

Abstract: SOT-23 1HC
Contextual Info: SS8050LT1 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 1500 300 2.4 417 25 0.1 40 100 5.0 100 35 4.0 WEITRON http://www.weitron.com.tw 1/2 0.15 u 0.15 u 27-Jul-2012 SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

sot-23 Marking 1Hc

Abstract: TOP marking 1HC marking 1Hc SS8050LT1 SOT-23 1HC
Contextual Info: SS8050LT1 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 1500 300 2.4 417 25 0.1 40 100 5.0 100 O E=20 Vdc, I E= 0 ) 35 4.0 WEITRON http://www.weitron.com.tw 1/4 0.15 u 0.15 u 0.15 u Rev.A 10-Apr-09 SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

Y1 SOT-23

Abstract: marking y1 sot-23 8050LT1 marking Y1 sot23 y1 SOT23 Y1 marking transistor sot23 Y1 TRANSISTOR MARKING SOT23 5 8050L SS8050LT1 MARKING E1 SOT23 TRANSISTOR
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 SS8050LT1 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : 1.5 A

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250

Y2 transistor

Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123