SS8550LT1 Search Results

sot-23 Marking 1HD

Abstract: TOP marking 1HD SOT-23 1HD 1hb marking SS8550LT1
Contextual Info: SS8550LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 VCEO Value -25 -40 -5.0 -1500 300 2.4 417 -25 -0.1 -40 -100 -5.0 -100 O E=-20Vdc, I E= 0) -40 -5.0 WEITRON http://www.weitron.com.tw 1/4 -0.15 u -0.15 u -0.15 u Rev.A 10-Apr-09 SS8550LT1

sot-23 Marking 1HD

Contextual Info: SS8550LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 VCEO Value -25 -40 -5.0 -1500 300 2.4 417 -25 -0.1 -40 -100 -5.0 -100 -40 -5.0 WEITRON http://www.weitron.com.tw 1/2 -0.15 u -0.15 u 27-Jul-2012 SS8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

Contextual Info: SS8550LT1 PNP 3 * “G” Lead Pb -Free 1 2 SOT-23 VCEO Value -25 -40 -6.0 -1500 625 5.0 200 SS8550LT1=Y2 -25 -0.1 -40 -100 -6.0 -100 E=-20Vdc, I E= 0 ) -40 -5.0 WEITRON http://www.weitron.com.tw O -0.1 u -0.1 u -0.1 u SS8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

ss8550

Abstract: SS8550LT1
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 SS8550LT1 TRANSISTOR（ PNP ） 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : -1.5

SS850

Abstract: amplifier 800mA SS8550LT1 Y2 TRANSISTOR
Contextual Info: SS8550LT1 SEMICONDUCTOR TECHNICAL DATA 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to SS8050LT1 * Collector Current :Ic= -800mA * High Total Power Dissipation :Pc=625mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃ PNP EPITAXIAL SILICON TRANSISTOR

marking y1 sot-23

Abstract: SS8550LT1 Y1 SS8050LT1 amplifier 800mA
Contextual Info: SS8050LT1 SEMICONDUCTOR TECHNICAL DATA 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to SS8550LT1 * Collector Current :Ic= 800mA * High Total Power Dissipation :Pc=625mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃ NPN EPITAXIAL SILICON TRANSISTOR

Y2 SOT-23

Abstract: SS8550LT1 IC800
Contextual Info: SS8550LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 VCEO Value -25 -40 -6.0 -1500 625 5.0 200 SS8550LT1=Y2 -25 -0.1 -40 -100 -6.0 -100 E=-20Vdc, I E= 0 -40 -5.0 WEITRON http://www.weitron.com.tw ) O -0.1 u -0.1 u -0.1 u SS8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8550LT1 TRANSISTOR PNP SOT-323 FEATURES Power dissipation 1. BASE 2. EMITTER 1. 25¡ À0. 05 W (Tamb=25℃) 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current -1.5

Y2 TRANSISTOR

Abstract: SS8550LT1
Contextual Info: SS8550LT1 SS8550LT1 TRANSISTOR PNP SOT-323 FEATURES Power dissipation 1. BASE 2. EMITTER 1. 25¡ À0. 05 W (Tamb=25℃) 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current ICM: -1.5 A Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8550LT1 TRANSISTOR PNP FEATURES Power dissipation PCM: 0.3 Collector current ICM: -1.5 W(Tamb=25℃) A Collector-base voltage V(BR)CBO: V -40 Operating and storage junction temperature range

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250

Y2 transistor

Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123

s 8550 d

Abstract: s8550LT1 8550 sot-23 pnp SS8550LT1 SS8550
Contextual Info: MC C SOT-23 P la s tic -E n c a p s u la te T ra n s is to rs ^ ^ 1.BASE 2.EMITTER 3.COLLECTOR S S 8550LT 1 TR A N S IS TO R PNP 7T oi FEATURES '¿ r Power dissipation PCM: 0.625 W CTamb=25T ) Collector current ICM: -1.5 A Collector-base voltage V(BR)CBo:-40V