j3y transistor
Abstract: transistor j3y MARKING J3Y S8050LT1 SOT-23 J3Y s8050l S8050LT1-J3Y sot-23 Marking J3Y transistors marking HK S8050LT1 J3Y
Contextual Info: PLASTIC-ENCAPSULATE TRANSISTORS S8050LT1 S8050LT1 TRANSISTOR（ NPN ） SOT— —23 FEATURES Power dissipation 0.3 PCM : Collector current 0.5 ICM : Collector-base voltage V BR CBO : 40 W（Tamb=25℃） 1. BASE A 2. EMITTER 3. COLLECTOR V CHARACTERISTICS（
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s8050lt1ot--23500ma100ma+1030mhzj3y transistortransistor j3ymarking j3ysot-23 j3ys8050ls8050lt1-j3ysot-23 marking j3ytransistors marking hks8050lt1 j3y
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s8550lt1
Abstract: s8050l S8050LT1 S8550
Contextual Info: S8550LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Complement to S8050LT1 Package:SOT-23 Collector Current :Ic= -500mA High Total Power Dissipation :Pc=225mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃
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s8550lt1s8050lt1ot-23-500ma+4225mw-50mas8050ls8550
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s8050l
Abstract: S8050LT1 S8050 S8550LT1
Contextual Info: S8050LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Complement to S8550LT1 Package:SOT-23 Collector Current :Ic= 500mA High Total Power Dissipation :Pc=225mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃
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s8050lt1s8550lt1ot-23500ma+5225mw062inwidth300uss8050ls8050
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 S8050LT1 1. BASE TRANSISTOR（ NPN ） 2. EMITTER 3. COLLECTOR Parameter Symbol Test ０．９５ ０．４ ０．９５ １．９ ２．４ １．３ ２．９
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Transistor S8550 2TY
Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250
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od-1231n4148w1n4448w1n5711w+161n6263wb0520lwb0530wb0540wb5817wb5818wtransistor s8550 2tyschottky barrier sot-23 marking s4sk 8050skl4 sot-23d882 to-92br s8050bq d882transistor d882 datasheets8050 equivalentpcr100-6
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S8050L
Abstract: 8050L S8050LT1 S8050LT1-J3Y
Contextual Info: M C C SOT-23 P la s tic -E n cap s u la te T ra n s is to rs ^ S 8050L T1 TR A N SISTO R N PN 1 BASE 2 .EMITTER 3.COLLECTOR A “ ' FEATURES - o. Rower dissipation Pcm : 0.3 W (Tamb=25°C ) Collector current lCM: 0.5 A Collector-base voltage
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ot-238050l500ma100ma+3s8050lt1s8050ls8050lt1-j3y
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Y2 transistor
Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123
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huaxing20od-1231n4148w1n4448w+151n5711w1n6263wb0520lwb0530wb0540wy2 transistortransistor s8550 2tybq d882transistor bc547 bk 045transistor d882 datasheetz1 transistortransistor mark aqys8050 equivalentk596-bsot 89 d882
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