s8550lt1
Abstract: s8050l S8050LT1 S8550
Contextual Info: S8550LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Complement to S8050LT1 Package:SOT-23 Collector Current :Ic= -500mA High Total Power Dissipation :Pc=225mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃
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s8550lt1s8050lt1ot-23-500ma+4225mw-50mas8050ls8550
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sot-23 Marking 2TY
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 S8550LT1 1. BASE TRANSISTOR（ PNP ） 2. EMITTER 3. COLLECTOR Parameter Symbol ０．９５ ０．４ １．９ ０．９５ ２．４ １．３ ２．９ Power dissipation
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ot-23s8550lt1037tpy950tpy+3550ref022refsot-23 marking 2ty
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B9D TRANSISTOR
Abstract: PNP Transistor b9d transistor B9C B9C transistor PNP Epitaxial Silicon Transistor sot-23 S8550LT1 hfe pnp transistor 500ma 40v pnp sot23/B9C transistor
Contextual Info: S8550LT1 PNP EPITAXIAL SILICON TRANSISTORS HIGH VOLTAGE TRANSISTOR: PNP SOT— —23 FEATURES Die Size 0.44*0.44mm Power dissipation PCM : 225mW（Tamb=25℃） Collector current ICM : 0.5A Collector-base voltage V(BR)CBO : 40V 1. BASE 2. EMITTER 3. COLLECTOR
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s8550lt1ot--23225mwtamb150ma+9500mab9d transistorpnp transistor b9dtransistor b9cb9c transistorpnp epitaxial silicon transistor sot-23hfe pnp transistor500ma 40v pnpsot23/b9c transistor
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s8050l
Abstract: S8050LT1 S8050 S8550LT1
Contextual Info: S8050LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Complement to S8550LT1 Package:SOT-23 Collector Current :Ic= 500mA High Total Power Dissipation :Pc=225mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃
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s8050lt1s8550lt1ot-23500ma+5225mw062inwidth300uss8050ls8050
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2TY marking
Abstract: s8550lt1 marking 2TY 8550LT1 8550L
Contextual Info: M C C S O T -2 3 P la s tic -E n c a p s u ia te T r a n s is t o r s ^ ^ 1.BASE 2 .EMITTER 3.COLLECTOR S 8550LT1 TR A N SISTO R PNP FEATURES Power dissipation PCM: 0.3 W (T a m b = 2 5 r) C ollector current ICM: - 0 .5 A C ollector-base voltage V(BR)CBO:
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8550lt1s8550lt12ty markingmarking 2ty+18550l
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Transistor S8550 2TY
Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250
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od-1231n4148w1n4448w1n5711w+161n6263wb0520lwb0530wb0540wb5817wb5818wtransistor s8550 2tyschottky barrier sot-23 marking s4sk 8050skl4 sot-23d882 to-92br s8050bq d882transistor d882 datasheets8050 equivalentpcr100-6
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Y2 transistor
Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123
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huaxing20od-1231n4148w1n4448w+151n5711w1n6263wb0520lwb0530wb0540wy2 transistortransistor s8550 2tybq d882transistor bc547 bk 045transistor d882 datasheetz1 transistortransistor mark aqys8050 equivalentk596-bsot 89 d882
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