BR 736 Search Results

mje13009 equivalent

Abstract: buv48 equivalent TRANSISTOR REPLACEMENT table for transistor BUV47 BD241A MOTOROLA BU108 TIP33C equivalent TIP41C EQUIVALENT BD4202 buv48
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

transistor BF 697

Abstract: 3818 bf 697 2SB1427 bf465
Contextual Info: SPICE PARAMETER 2SB1427 by ROHM TR Div. * Q2SB1427 PNP BJT model * Date: 2006/11/20 .MODEL Q2SB1427 PNP + IS=1.0000E-12 + BF=465.72 + VAF=9.7000 + IKF=2.4524 + ISE=1.0000E-12 + NE=1.9208 + BR=100.88 + VAR=100 + IKR=73.071E-3 + ISC=160.34E-12 + NC=1.7538 + NK=.73634

UGN3605K

Abstract: N35H ugn3605 ndfeb-magnets UGn-3605 hallsensor magnet N-35H hall-sensor ndfeb
Contextual Info: Allegro MicroSystems, Inc Werksvertretung NEOBDYNMAGNET NdFeB - O09.0045 cylindrical N S OD 4.0 B h 3.0 Magnet Data Parameter Symbol NdFeB Material Magnetic flux density Br Temp. coefficient of the flux density Min. TA number of pole-pairs P Direction of magnetization

Contextual Info: DMG1016UDW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features and Benefits Product Summary N EW PRODU CT Device Q1 Q2 V BR DSS 20V ID RDS(ON) TA = 25°C 0.45 @ VGS = 4.5V 1066mA 0.75 @ VGS =- 4.5V -845mA • Low On-Resistance • Low Gate Threshold Voltage

AUIRF7738L2

Contextual Info: PD - 96333 AUIRF7738L2TR AUIRF7738L2TR1 AUTOMOTIVE GRADE Automotive DirectFET™ Power MOSFET ‚ V BR DSS 40V • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.2mΩ other Heavy Load Applications Exceptionally Small Footprint and Low Profile

109AS

Abstract: 08143
Contextual Info: PD - 96333A AUIRF7738L2TR AUIRF7738L2TR1 AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET ‚ V BR DSS 40V RDS(on) typ. 1.2mΩ • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile

beta 3435

Abstract: QT06015-054 3773 SMD 142012 76118 202F NTC Thermistor 301
Contextual Info: .019 .002 .039 .002 ELECTRICAL CHARACTERISTICS: R25C=10,000 OHMS 1% BETA=3435 OPERATING TEMPERATURE: -40C TO 125C DISSIPATION CONSTANT: 2.5 mW/C MIN POWER RATING: 250mW AT 25C .019 .002 NOTES: SMD 0402 PACKAGE DRAWN INITIAL DATE BR 11/24/2009 2108 CENTURY WAY

49319

Abstract: 62277 175656 QT06015-055 smd 4468
Contextual Info: .031 .004 .063 .004 ELECTRICAL CHARACTERISTICS: R25C=10,000 OHMS 1% BETA=4100 OPERATING TEMPERATURE: -40C TO 125C DISSIPATION CONSTANT: 3.5 mW/C MIN POWER RATING: 350mW AT 25C .037 .004 NOTES: SMD 0603 PACKAGE DRAWN INITIAL DATE BR 11/24/2009 2108 CENTURY WAY

DMG1016UDW

Abstract: DMG1016UDWQ-7
Contextual Info: DMG1016UDW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT Device Q1 Q2 Features and Benefits V BR DSS 20V ID RDS(ON) TA = 25°C 0.45Ω @ VGS = 4.5V 1066mA 0.75Ω @ VGS =- 4.5V -845mA • Low On-Resistance • Low Gate Threshold Voltage

Contextual Info: PD - 96333A AUIRF7738L2TR AUIRF7738L2TR1 AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET ‚ V BR DSS 40V RDS(on) typ. 1.2mΩ • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile

Contextual Info: DMG1016UDW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • N EW PRO D UC T Device Q1 Q2 V BR DSS 20V ID RDS(ON) TA = 25°C 0.45Ω @ VGS = 4.5V 0.75Ω @ VGS =- 4.5V 1066mA -845mA Low On-Resistance • Low Gate Threshold Voltage

Contextual Info: IRF7738L2PbF DirectFET Power MOSFET ‚ V BR DSS 40V RDS(on) typ. 1.2mΩ max. 1.6mΩ ID (Silicon Limited) 184A Qg 129nC Features • Advanced Process Technology • Optimized for Motor Drive, DC-DC and other Heavy Load Applications • Exceptionally Small Footprint and Low Profile

Marking 636 SOT26

Contextual Info: A Product Line of Diodes Incorporated DMC2700UDM 20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • • • • NEW PRODUCT ID max Device V BR DSS RDS(on) max TA = 25°C (Notes 4) Q1 0.4Ω @ VGS = 4.5V

Contextual Info: A Product Line of Diodes Incorporated DMC2700UDM 20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • • • • N EW PRODU CT ID max Device V BR DSS RDS(on) max TA = 25°C (Notes 4) Q1 0.4Ω @ VGS = 4.5V

X2-DFN1006-3

Abstract: DMN2500UFB4-7
Contextual Info: DMN2500UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V BR DSS Features and Benefits • • • • • • • • • • ID RDS(on) max TA = 25°C 0.4Ω @ VGS = 4.5V 1A 0.7Ω @ VGS = 1.8V 0.8A 20V Low On-Resistance Very Low Gate Threshold Voltage VGS(TH), 1.0V max

Contextual Info: DMN2500UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V BR DSS Features and Benefits • • • • • • • • • • ID RDS(on) max TA = 25°C 0.4Ω @ VGS = 4.5V 1A 0.7Ω @ VGS = 1.8V 0.8A 20V Low On-Resistance Very Low Gate Threshold Voltage VGS(TH), 1.0V max

J305

Abstract: siliconix jfets J304
Contextual Info: Tem ic J304/305 Siliconix N-Channel JFETs Product Summary Part Number v GS oB (V) J304 - 2 to —6 J305 -0.5 to - 3 gfeMin (mS) IDSS M in(m A) -3 0 4.5 5 -3 0 3 1 ; V<BR)Gss Min (V) Features Benefits Applications • Excellent High Frequency Gain: J304, Gps 11 dB (typ) @ 400 M Hz

dallas 2501

Abstract: TLC22721P TLC2272 TLC2274 TLC272 TLC274 TLV2432 TS272 TS274 10DC IR 3 P
Contextual Info: Tl C 9 9 7 y Tl C 9 9 7 y A Advanced LinCMOS RAIL-TO-RAIL OPERATIONAL AMPLIFIERS SLOS19QB - FE BR U ARY 1997 - REVISED JU LY 1999 Output Swing Includes Both Supply Rails Low Noise . . . 9 nVA/Hz Typ at f = 1 kHz Low Input Bias Current. . . 1 pA Typ Fully Specified for Both Single-Supply and

Contextual Info: DMN2500UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • • • ID RDS(on) max TA = 25°C 0.4Ω @ VGS = 4.5V 1A 0.7Ω @ VGS = 1.8V 0.8A ADV AN CE I N FORM AT I ON 20V Low On-Resistance Very Low Gate Threshold Voltage VGS(TH), 1.0V max

KT604

Abstract: 2SC627 KT604A BF3920 MPSA430 BF292 LOW-POWER SILICON NPN KT604B 2SC1048 bf355
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 Manufacturer 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 200 30 30 30 30 30 30 30 30 30 35 4 40 40 40 40 40 40 40 40 40 MMBTA43 MPSA43 5MBTA43 ESM643 2N6430 MPS•A43 BF643

1SS SOT-23

Abstract: SST5484
Contextual Info: Tem ic J304/305 S e m i c o n d u c t o r s N-Channel JFETs Product Summary Part Number V BR G S s M i n ( V ) gb Min (mS) lo ss Min (mA) J304 -2 to -6 -30 4.5 5 J305 -0.5 to -3 -30 3 1 VGS(off) (V) Features Benefits Applications • Excellent High Frequency Gain: J304,

Contextual Info: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST 11 PNP QÛ LU z > > un BR E A K D O \ V O LT A G E h FZE SAT V O L T A iGES M a x. V CE (V) 'c (A) M in . M ax. 'c (A) 'b (A) V CE (V) V BE (V) CASE V CB V CE 2N 6468 TO -66 130 120 5 4 1.5 15 150 1.5 0.15

Contextual Info: 3 73643 , MATERIALS HOUSI NG - LIQUID 2 CRYSTAL 73643 POLYMER LCP , G L A S S - F I L L E D , U L 9 4 V - 0 , COLOR: B L A C K , T E R M I N A L - PHOSPHOR BR ONZ E, S E L E C T I V E GOLD ( A u ) IN C O N T A C T A R E A , 0 , 0 0 0 7 6 m m MINIMUM T H I C K N E S S ; N I C K E L (Ni) AND GOLD F L A S H O V E R A L L