DMN2500UFB4 Search Results

X2-DFN1006-3

Abstract: DMN2500UFB4-7
Contextual Info: DMN2500UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V BR DSS Features and Benefits • • • • • • • • • • ID RDS(on) max TA = 25°C 0.4Ω @ VGS = 4.5V 1A 0.7Ω @ VGS = 1.8V 0.8A 20V Low On-Resistance Very Low Gate Threshold Voltage VGS(TH), 1.0V max

Contextual Info: DMN2500UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V BR DSS Features and Benefits • • • • • • • • • • ID RDS(on) max TA = 25°C 0.4Ω @ VGS = 4.5V 1A 0.7Ω @ VGS = 1.8V 0.8A 20V Low On-Resistance Very Low Gate Threshold Voltage VGS(TH), 1.0V max

Contextual Info: DMN2500UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • • • ID RDS(on) max TA = 25°C 0.4Ω @ VGS = 4.5V 1A 0.7Ω @ VGS = 1.8V 0.8A ADV AN CE I N FORM AT I ON 20V Low On-Resistance Very Low Gate Threshold Voltage VGS(TH), 1.0V max

NX3008

Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
Contextual Info: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1

AP3039AM

Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)