BP 5200 Search Results

0900BL18B200

Abstract: S805D 500L41L120XG4 smd V05 2450BL15B200 substitution 0900BL18B100 SMD transistor package code V12 SMD package code V12 Johanson Dielectrics marking code v4t
Contextual Info: C e HlSianc Roomp High Frequency Ceramic Solutions Antennas Baluns Capacitors - Low Loss Couplers Combiners Diplexers Filters - Notch, BP, LP Inductors IPC’s Integrated Passive Components Modules 90 Hybrids Substrates 931 VIA ALONDRA, CAMARILLO, CALIFORNIA 93012 • TEL (805) 389-1166 • FAX (805) 389-1821

sil6400

Abstract: STS7500 s520 SSF4500 s7302
Contextual Info: Temic S e m i c « n il u c t o r s Genera] Information Alphanumeric Index T>pe . Type . BP 1 0 4 . . 6 .2 0 7 B P W 8 5 . . . . 320 T E M T 2 2 0 0 . . . 4 ,3 9 8 TSIP7601 . . . . B P V 1 0 . . 5 ,2 0 3

tl377

Abstract: Ku band limiter TL374 TL371 TL392 TL368A tr-tube
Contextual Info: TR-Tubes W ith Limiter Igniteriess Type 7ÿ"A,l~ Jr —i> X 'W ) - Ï - ? » * w<mT% '• 'r7 — (MHz) Transmitter Power (kW max.) Flat Leakage Power (mW max.) TL382 2700-2900 100 20 TL389 2700-2900 200 20 Type Frequency Spike Leakage Energy (erg max.)

8r210

Abstract: srf 1714 L0402 1R5a 47056 CDR11BP gps 5350 Keithley 136 l0805 lga 1155
Contextual Info: www.avx.com AVX RF Microwave Products Version 8.1 AVX Microwave Ask The World Of Us As one of the world’s broadest line multilayer ceramic chip capacitor suppliers, and a major Thin Film RF/Microwave capacitor, inductor, directional coupler and low pass filter and

Piezoelectric aw 1202

Abstract: srf 2325 code coils smd 6r8 ITF 2043 073 L0402 Piezoelectric aw 1201 resistor 2512 3w 0.5m EIA-198 2512 Thin-film magnetic resistance LP0603
Contextual Info: www.avx.com AVX RF Microwave Products Version 11.1 AVX Microwave Ask The World Of Us As one of the world’s broadest line multilayer ceramic chip capacitor suppliers, and a major Thin Film RF/Microwave capacitor, inductor, directional coupler and low pass filter and

TR BC 440-6 Datasheet

Abstract: Piezoelectric aw 1202 varicon capacitor variable 431A SMD CODE MARKING agilent 1458 CDR11BP ntc 4R0 CDR12BP smd 3528 led strip srf 1714
Contextual Info: www.avx.com AVX RF Microwave Products Version 10.9 AVX Microwave Ask The World Of Us As one of the world’s broadest line multilayer ceramic chip capacitor suppliers, and a major Thin Film RF/Microwave capacitor, inductor, directional coupler and low pass filter and

ck 66 ul94v-0 lcd

Abstract: ESCC3009 03028-BP TAJB SHAPE lct thyristor M28861/05 CECC 30701-007 3001 8AT electrolytic capacitor 2200 micro farad 63V M28861/01-016TB
Contextual Info: HIGH RELIABILITY www.avx.com AVX Ultimate Guide to Enhanced and High Reliability Components ADVANCED Passives & interconnect Version 7.1 AVX is the leading manufacturer of established and high reliability passive and interconnect components. We can offer a broad

Contextual Info: RUGGED SYSTEMS 12R1/12R2/12RC ATR ENCLOSURES ACCESSORIES SHELF MANAGEMENT BACKPLANES Rugged COTS: Products and Services Elma Electronic www.elma.com Elma Electronic ABOUT ELMA ELMA PRODUCT DIVISIONS Founded in 1962, Elma is an industry innovator in the design and manufacture

cn/A/U 237 BG

Contextual Info: www.avx.com AVX RF Microwave Products Version 15.1 AVX Microwave Ask The World Of Us As one of the world’s broadest line multilayer ceramic chip capacitor suppliers, and a major Thin Film RF/Microwave capacitor, inductor, directional coupler and low pass filter and

9C0000

Contextual Info: 128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory PCM Features • Security – One-time programmable registers 64 unique factory device identifier bits 2112 user-programmable OTP bits – Selectable OTP space in main array – Three adjacent main blocks available for boot code

9C0000

Contextual Info: 128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory PCM Features • Security – One-time programmable registers 64 unique factory device identifier bits 2112 user-programmable OTP bits – Selectable OTP space in main array – Three adjacent main blocks available for boot code

Contextual Info: 128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory PCM Features • Security – One-time programmable registers 64 unique factory device identifier bits 2112 user-programmable OTP bits – Selectable OTP space in main array – Three adjacent main blocks available for boot code

cn/A/U 237 BG

Contextual Info: www.avx.com AVX RF Microwave Products Version 13.11 AVX Microwave Ask The World Of Us As one of the world’s broadest line multilayer ceramic chip capacitor suppliers, and a major Thin Film RF/Microwave capacitor, inductor, directional coupler and low pass filter and

Contextual Info: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program

CR10

Abstract: M58LT128HSB M58LT128HST
Contextual Info: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program

M58LT128KSB

Abstract: M58LT128KST
Contextual Info: M58LT128KST M58LT128KSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure flash memories Features „ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program

M58LT128HSB

Abstract: CR10 M58LT128HST
Contextual Info: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program

CR10

Abstract: M58LT128HSB M58LT128HST
Contextual Info: M58LT128HST M58LT128HSB 128-Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply, Secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program

Contextual Info: M58LT128KST M58LT128KSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure flash memories Features „ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program

Contextual Info: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program

CR10

Abstract: M58LR128HB M58LR128HT VFBGA56
Contextual Info: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program

Contextual Info: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program

M58LT128HB

Abstract: M58LT128HT CR10 VFBGA56 026h
Contextual Info: M58LT128HT M58LT128HB 128 Mbit 8 Mb x 16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program

BP 109

Abstract: CR10 M58LR128HB M58LR128HT VFBGA56
Contextual Info: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program