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    M58LR128HB Search Results

    M58LR128HB Datasheets (2)

    STMicroelectronics
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    M58LR128HB
    STMicroelectronics 128 Mbit (8 Mb x16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories Original PDF 713.54KB 112
    M58LR128HB85ZB5E
    STMicroelectronics 128 Mbit (8 Mb x16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories Original PDF 713.55KB 112
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    M58LR128HB Price and Stock

    Micron Technology Inc

    Micron Technology Inc M58LR128HB85ZB5E

    Flash, 8MX16, 85ns, PBGA56
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian M58LR128HB85ZB5E 7,092
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    Micron Technology Inc M58LR128HB85ZB5F

    Flash, 8MX16, 85ns, PBGA56
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian M58LR128HB85ZB5F 6,069
    • 1 -
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    M58LR128HB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CR10

    Abstract: M58LR128HB M58LR128HT VFBGA56
    Contextual Info: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program


    Original
    m58lr128htm58lr128hbvfbga56cr10 PDF

    Contextual Info: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


    Original
    m58lr128htm58lr128hb PDF

    Contextual Info: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


    Original
    m58lr128htm58lr128hb PDF

    BP 109

    Abstract: CR10 M58LR128HB M58LR128HT VFBGA56
    Contextual Info: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program


    Original
    m58lr128htm58lr128hbbp 109cr10+1vfbga56 PDF

    Contextual Info: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program


    Original
    m58lr128htm58lr128hbm58lr128hb85zb5f PDF

    PSRAM

    Abstract: M36L0R7060B1 M36L0R7060T1 M58LR128HB M58LR128HT M69KB096AM
    Contextual Info: M36L0R7060T1 M36L0R7060B1 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash memory


    Original
    m36l0r7060t1m36l0r7060b188c4h88c5h+5tfbga88psramm58lr128hbm58lr128htm69kb096am PDF

    PSRAM

    Abstract: M36L0R7060B1 M36L0R7060T1 M58LR128HB M58LR128HT ubp 100
    Contextual Info: M36L0R7060T1 M36L0R7060B1 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash memory


    Original
    m36l0r7060t1m36l0r7060b188c4h88c5h+5tfbga88psramm58lr128hbm58lr128htubp 100 PDF