SO-104
Abstract: BLW11 blw 30 or bfw 30 BLW21 BLY 67 BLY-38 BLY34 bly 55 bly 63 BLY87
Contextual Info: VHF-, UHF-ANWENDUNGEN VHF-, UHF APPLICATIONS 3 - 12 Typ type f MHz BFW 16 BFW 17 BFX 89 BFY 90 CATV CATV CATV CATV BLW11 BLW 12 BLW 13 BLW 14 CATV 470 470 470 13 13 13 0,1 0,75 2 0,66 3,75 7 BLW BLW BLW BLW 16 17 18 19 175 175 175 175 13 13 13 13 0,1 0,1 0,5
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blw11o-131o-129o-117+9so-104blw 30 or bfw 30blw21bly 67bly-38bly34bly 55bly 63bly87
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blw 30 or bfw 30
Abstract: TRANSISTOR BFW 11 BLY83 BLY78 bly91 BLY-38 BLW11 blw 93 BLY76 BLY53
Contextual Info: BLW 22 SILICON NPN VHF POWER TRANSISTOR 873 FOR HIGH LEV EL C ATV APPLICATIONS • • • Typical f T 1000 MHz Cross M odulation Typically — 80 dB Inter Modulation Typically — 52 dB mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .40 V
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o-117t0-60ces0-104so-104+10blw 30 or bfw 30transistor bfw 11bly83bly78bly91bly-38blw11blw 93bly76bly53
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BLY93
Abstract: bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88
Contextual Info: BLW14 SILICON NPN VHF POWER TRANSISTOR 873 H IG H G A IN O U TP U T FOR 13 V FM A P P L IC A TIO N S • 7 W a t 470 M H z • Stripline Package • Distributed Construction mechanical data TO-129 absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .36 V
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blw14o-129o-117t0-60ce+12s0-104so-104bly93bly89bly78bly91blx65bly93abfy 94 transistorbly 78blw11bly88
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BLW16
Abstract: BLW25 S0104 BLY78 BLY85 Transistor BFX 59 BFW 100 transistor bly93a BLY-38 BLW11
Contextual Info: BLW16 SILICON NPN VHF POWER TRANSISTOR 271 HIGH GAIN VH F MEDIUM POWER TRANSISTOR • • • • 1.4 W at 175 MHz Greater than 10 dB Gain Distributed Construction Interdigital Geometry mechanical data absolute maximum ratings T^ase s 25 °C Collector-Base V o lt a g e .36 V
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blw16o-117t0-60ces0-104+10so-104blw25s0104bly78bly85transistor bfx 59bfw 100 transistorbly93ably-38blw11
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BLW24
Abstract: BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92
Contextual Info: BLW24 SILICON NPN VHF POWER TRANSISTOR HIGH POWER OUTPUT STAGE FOR FM/AM APPLICATIONS • • • • 17 W@ 175 MHz 8 dB Gain Distributed Construction I nerdigital Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 60 V
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blw24o-1175o-117t0-60ce+11s0-104so-104bly38bly88bly91bly-38blx66bly power transistortransistor bfw 16bly36transistor bfw 92
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BLW25
Abstract: bly91 BLY93 BLY78 BLY-38 BLY-53 BLW11 BLw vhf BLY79 BLY88
Contextual Info: BLW25 SIL IC O N NPN VH F POWER T R A N SIST O R High Gain Output for 13 V A M Applications 40 W a t 175 M H z M inim um Gain 7 dB. mechanical specifications absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e .60 V
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blw25o-145toxi175o-117+12t0-60ces0-104so-104bly91bly93bly78bly-38bly-53blw11blw vhfbly79bly88
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BLY78
Abstract: BLY87 bly91 BLY93A TRANSISTOR BFW 11 Transistor BFX 90 BLY34 BLW12 BLY91A BLY53
Contextual Info: BLW12 SILICO N NPN VH F POWER TRANSISTOR HIGH G AIN DRIVER FOR 13 V FM APPLICATIONS • • • • 750 mW at 470 MHz Min, Gain 10 dB Studless Stripline Package Distributed Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 36 V
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blw12o-117t0-60ces0-104+10so-104bly78bly87bly91bly93atransistor bfw 11transistor bfx 90bly34bly91ably53
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BLY93A
Abstract: BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63
Contextual Info: BLW23 SILICON NPN VH F POWER TRANSISTOR • • • 5 W at 175 MHz, 28 V Minimum Gain 13 dB Designed to Withstand Infinite VSWR at Rated Output mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 55 V
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blw238/32-unc-2a-threado-117t0-60ce+12s0-104so-104bly93ably78bly34bly97ably-38blw11bly91blw25blw19bly 63
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BLW20
Abstract: TRANSISTOR BFW 16 BLW24 BLW19 BLW11 BLX67 BLY93A bly91 61 TRANSISTOR BLY53A
Contextual Info: BLW20 SIL IC O N NPN V H F POWER T R A N SIST O R 873 HUGH GAIN OUTPUT FOR 13 V FM APPLICATIONS « » » 25 W at 175 MHz Designed to withstand all VSWR at Rated Output Distributed Construction mechanical data absolute maximum ratings Tease93 25 °C Collector-Base V o lta g e . 36 V
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blw2032-unc-2a-threado-117t0-60ce+11s0-104so-104transistor bfw 16blw24blw19blw11blx67bly93ably9161 transistorbly53a
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BLW 12v
Abstract: TO-131 Package BLY85 BLW11 BLW17 BLY53 bly53a BLY 67 BLY60 BLX67
Contextual Info: BLW17 SIL IC O N NPN V H F POWER T R A N SIST O R 271 HIGH G AIN MEDIUM POWER VH F AM PLIFIER • • • • 2 W@ 175 MHz 13 dB Gain Stripline Package Interdigital Geometry mechanical specification absolute maximum ratings T Ca s e ~ 25 °C Collector-Base V o lta g e .36 V
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blw17blw 12vto-131 packagebly85+6blw11bly53bly53ably 67bly60blx67
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BFW 11 oa
Abstract: bly78 BLW18 BLW11 bly92a bly93a BLY38 bly34 BLY60 BLY53
Contextual Info: BLW18 SILIC O N NPN VH F POWER T R A N S IST O R electrical characteristics at 25 °C case temperature unless otherwise noted PAR AM ETE R V IBR)CER lc = 50 m A , R b e = 1 0 Í2 L V CEO C o lle ctor-E m itte r Breakdown Voltage I q = 50 m A , Iß = o See N ote 1
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blw18vcb-13vo-117t0-60ce+11s0-104so-104bfw 11 oably78blw11bly92ably93ably38bly34bly60bly53
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TRANSISTOR BFW 11
Abstract: BLW11 BLW13 BLY92 BLX67 BLY34 BLY97 transistor BFW 10 BLY53A BFy 90 transistor
Contextual Info: BLW13 S IL IC O N NPN V H F POWER T R A N SIST O R H IG H G A IN D R IV E R FOR 13 V FM A P P L IC A TIO N S • 3.7 5 W at 470 M Hz • Minim um Gain 7 dB • • Stripline Package Distributed Construction mechanical data TO-129 absolute maximum ratings Tease * 2 5 °C
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blw13o-117t0-60ces0-104+10so-104transistor bfw 11blw11bly92blx67bly34bly97transistor bfw 10bly53abfy 90 transistor
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bly 2 10
Abstract: BLW11 blx66 BFY90 uhf vhf amplifier bly62 transistor zg BLY53A BLY78 BFy 90 transistor
Contextual Info: BFY90 NPN EPITAXIAL PLANAR SILICON TRANSISTOR . . _ 769 FOR LOW NOISE U H F/VH F A M P L IFIE R AND O SC ILLA TO R APPLICA TIO N S • • • • Guaranteed Guaranteed Guaranteed Guaranteed Low Noise Figure —5 dB Maximum at 500 MHz Gain Bandwidth Product — 1*5 GHz
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bfy90o-117t0-60ces0-104+10so-104bly 2 10blw11blx66uhf vhf amplifierbly62transistor zgbly53ably78bfy 90 transistor
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BLY 33 transistor
Abstract: BLW11 BFW 100 transistor BFY 52 transistor bfw 11 BFy 90 transistor Transistor BFX 59 transistor BFW 10 BLY 97 transistor texas rf power transistor
Contextual Info: BLW11 SILICON NPN VH F/UH F POWER TRANSISTOR Ideal for C A T V Applications Typical Gain Bandwidth Product —1.35 GHz 11 dB Gain @ 20 0 M H z. In Broadband Circuit Low Distortion Low Noise mechanical data absolute maximum ratings (Tease ” 2 5 °C ) . . .
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blw11o-117t0-60ces0-104+10so-104bly 33 transistorbfw 100 transistorbfy 52 transistorbfw 11bfy 90 transistortransistor bfx 59transistor bfw 10bly 97 transistortexas rf power transistor
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643
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mrf245
Abstract: SD1416 PT9788 PT8710 2N5642 BLY94 PT8811 BLX66 PT8740 2N4072
Contextual Info: 88. 108 MHz class C for FM tansmitters émetteurs/réémetteurs FM, classe C TYPE SD 1457 SD 1460 PACKAGE CONFIG. Vcc CE CE 28 28 . 500 4LFL . 500 4LFL Pout W (V) > THOMSON-CSF fo (MHz) Pin (W) Gp (dB) (% ) 108 108 7,5 20 > 10 9 75 75 75 160 r!c .380 4L FL
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sd2n6082bm80-12sd1416mm1601+15mrf631sd1144pt8549sd1214n50542n3553mrf245pt9788pt87102n5642bly94pt8811blx66pt87402n4072
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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ldr 03valvo halbleiterldr -03cny63+6cny62byx 71 800cxy19valvoldr 07bzw10-12
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SOT123 Package
Contextual Info: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS RF power transistors RF & MICROWAVE SEMICONDUCTORS & MODULES VHF 25 - 175 MHz BIPOLAR TRANSISTORS continued type number load power @ 175 MHz W power gain @ 175 MHz (dB) supply voltage
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2n38662n3553bfs23ablv20+7bly91cbly91c/01blv21bly92cbly92c/01blw84sot123 package
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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rpy 86valvo halbleiterrpy94cqy 24+6bv ei 30-20 3001ldr 03diode byx 64 600valvo transistorenkp101abav99-1
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BLW40
Abstract: MCD205 TLO 721
Contextual Info: Philips Sem iconductors I 7 1 1 DS2 b 0 0 t>3232 3 bS ^BPHIN PHILIPS INTERNATIONAL VHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. Product specification
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711065b00b3535blw40ot120+3pinning-sot120mcd205tlo 721
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bpx28
Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Contextual Info: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten
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bpx28germanium diode oa 182taa920fy sot 143+6bsv57bac187kbpw14bf194ad 161bpx34
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OT239
Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Contextual Info: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to
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ot239bt100a 02cqx82atrio ta 80w+6cv7351zp1481cv2154zp1430triac mw 151 500rpl5727
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931
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