BLF1 Search Results

TRANSISTOR CW 7808

Abstract: cw 7808 7808 cw SOT502A 7808 voltage regulator ACPR400 BLF1049 transistor 7808
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D379 BLF1049 Base station LDMOS transistor Product specification Supersedes data of 2001 Dec 05 2003 May 14 Philips Semiconductors Product specification Base station LDMOS transistor BLF1049 FEATURES DESCRIPTION

Contextual Info: BLF10M6135; BLF10M6LS135 Power LDMOS transistor Rev. 1 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance

BLF1047

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D390 BLF1047 UHF power LDMOS transistor Preliminary specification 1999 Jul 12 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1047 FEATURES PINNING - SOT541A • High power gain PIN DESCRIPTION

BLF1046

Abstract: BP317 TEKELec 467
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1046 UHF power LDMOS transistor Preliminary specification 2000 Sep 20 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1046 PINNING - SOT467C FEATURES • High power gain PIN DESCRIPTION

BLF177

Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability

Contextual Info: L/-*ioauet±, Line. tJ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. HFA/HF power MOS transistor FEATURES BLF175 PIN CONFIGURATION • High power gain « Low intermodulation distortion • Easy power control

MRF255 equivalent

Abstract: motorola mrf Motorola transistors MRF mrf5015 mrf184 MRF151G F2012 DU1230P uf2810p MRF255
Contextual Info: CROSS REFERENCE Click on part No. to retrieve data sheet . 5/22/2005 Motorola POLYFET PHILIPS POLYFET MA/COM PHI POLYFET MRF134 MRF136 MRF137 MRF141 MRF141G PRF134 PRF136 PRF137 SM401 SR401 BLF145 BLF147 BLF175 BLF177 BLF242 MRF148 MRF151 MRF151G SA741 SM341

BLF177

Abstract: philips ET-E 60 4312 020 36642 2222 030 capacitor philips MARKING H3B WCA244
Contextual Info: bbS3^31 GOSTfi?1! Philips Semiconductors H3B [A P X Product specification BLF177 HF/VHF power MOS transistor N AMER P H I L I P S / D I S C R E T E b'iE D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control

mosfet K 2865

Abstract: blf146 sot121
Contextual Info: N AUER PHILIPS/DISCRETE DfaE D M bb53^31 001330? DEVELOPMENT DATA BLF146 T h is data sheet contains advance information and specifications are subject to change w ithout notice. 86D 01064 D 7 - - 31 - I 3 R.F. POWER MOSFET N-channel enhancement mode vertical D-MOS transistor intended fo r use in professional transmitters

A17200

Contextual Info: BLF145 HF power MOS transistor Rev. 04 — 5 January 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

tp2304

Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
Contextual Info: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12

BLF1046

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1046 UHF power LDMOS transistor Preliminary specification Supersedes data of 1999 Nov 02 2000 Feb 02 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1046 FEATURES PINNING - SOT467C

BLF175

Contextual Info: BLF175 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI BLF175 is Designed for General Purpose Class B Power Amplifier Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES: S • PG = 24 dB Typ. at 30 W /28 MHz • ηD = 40% Typ. at 30 W /28 MHz

BLF188XR NXP

Contextual Info: BLF188XR; BLF188XRS Power LDMOS transistor Rev. 2 — 12 July 2013 Objective data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.

Contextual Info: BLF10M6200; BLF10M6LS200 Power LDMOS transistor Rev. 1 — 1 July 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

LDMOS 15w

Abstract: BLF1043 EQUIVALENT BLF861 BLF861A BLF1822-10 BLF2045 09nH
Contextual Info: Philips Semiconductors LDMOS Broadcast Drivers Equivalent Circuits • BLF1043, BLF1822-10 and BLF2045 are LDMOS transistors which can be used in Band IV/V applications in conjunction with BLF861A • To support the use of these drivers in Band IV/V, equivalent in- and output circuits are shown

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1048 UHF power LDMOS transistor Preliminary specification Supersedes data of 1998 Jul 07 1998 Aug 05 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1048 PINNING - SOT502A

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D390 BLF1047 UHF power LDMOS transistor Preliminary specification 2001 Jan 25 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1047 PINNING - SOT541A FEATURES • High power gain PIN DESCRIPTION

transistor d 965 al

Abstract: TRANSISTOR D 471 BLF1048 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1048 UHF power LDMOS transistor Preliminary specification Supersedes data of 1999 July 01 2000 Feb 02 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1048 FEATURES PINNING - SOT502A

BLF177

Abstract: 8830 transistor transistor marking code HF
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D060 BLF177 HF/VHF power MOS transistor Product specification Supersedes data of 2003 Jul 21 2004 Dec 17 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION • High power gain

smd JH transistor

Abstract: transistor smd z3 transistor SMD Z2 smd transistor z4 capacitor tantalum smd Transistor z1 smd CBD46 34S2 MDB150 M3D438
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLF1043 UHF power LDMOS transistor Product specification Supersedes data of 2002 November 11 2003 Mar 13 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1043 PINNING - SOT538A FEATURES • Typical 2-tone performance at a supply voltage of 26 V

BLF177,112

Abstract: transistor list sot121B package snw-eq-608 MBK-408 TRIMMER cap no-2222 809 07015 NXPBLF177 BLF177C
Contextual Info: BLF177 HF/VHF power MOS transistor Rev. 06 — 24 January 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

transistor tt 2222

Abstract: TT 2222 enamelled copper wire tables 2222 123 capacitor philips pu enamelled copper wire TL 2222 4312 020 36640 ferroxcube wideband hf choke 22 nF, 63 SOT123 Package
Contextual Info: Philips Semiconductors Product specification HF power MOS transistor PHILIPS T -3 ^ -// INTERNATIONAL FEATURES 5bE D I 711002b DOMBbTM BLF145 437 IPHIN PIN CONFIGURATION • High power gain • Low noise figure • Good thermal stability • Withstands full load mismatch.

Philips 2222 capacitor

Abstract: philips capacitor philips capacitor 2222
Contextual Info: Philips Semiconductors bbS 3^31 Q Q S T f i ? 1! T35 M A P X ^ P r o d u c ts p e c ific a tio n HF/VHF power MOS transistor ^ — BLF177 N AMER PHILIPS/DISCRETE b^E D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control