ACPR400 Search Results

LPC2148 i2c

Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Contextual Info: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.

transistor 1892

Abstract: ACPR400 ACPR600 BLC6G20-75 BLC6G20LS-75
Contextual Info: BLC6G20-75; BLC6G20LS-75 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance

TRANSISTOR CW 7808

Abstract: cw 7808 7808 cw SOT502A 7808 voltage regulator ACPR400 BLF1049 transistor 7808
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D379 BLF1049 Base station LDMOS transistor Product specification Supersedes data of 2001 Dec 05 2003 May 14 Philips Semiconductors Product specification Base station LDMOS transistor BLF1049 FEATURES DESCRIPTION

BLF7G20L-90P

Abstract: 1800 ldmos BLF7G20LS-90P RF35 PLW70
Contextual Info: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 — 28 April 2010 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

BLF7G20LS-140P

Abstract: 850 SMD Rework Station RF35
Contextual Info: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

philips Electrolytic Capacitor

Abstract: blf4g20-110b ACPR400 ACPR600 BLF4G20S-110B RF35 Philips Electrolytic
Contextual Info: BLF4G20-110B; BLF4G20S-110B UHF power LDMOS transistor Rev. 01 — 23 January 2006 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance

SmD TRANSISTOR a75

Contextual Info: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

h2lb

Abstract: ACPR400 DCS1800 EGSM900 GSM1800 GSM1900 PCS1900 STW3100
Contextual Info: STW3100 TRANSCEIVER MODULE REV. 1.0 - PRODUCT PREVIEW 1 • ■ ■ ■ FEATURES Triple-band EGSM900 / DCS1800 / PCS1900 . Supports data transfer applications in multislots GPRS class-12 EDGE Receive capability Integrates: – BiCMOS6G RF transceiver – 3 Receive Band Pass filters

m 110b1

Abstract: ACPR400 ACPR600 BLF4G20LS-110B RF35 PHILIPS GSM I Q
Contextual Info: BLF4G20LS-110B UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance

transistor 2N2222 SMD

Abstract: capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980
Contextual Info: BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 — 19 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance

ACPR750

Abstract: BGF802-20 CDMA800
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF802-20 CDMA800 power module Product specification Supersedes data of 2003 Jun 13 2005 Jun 03 Philips Semiconductors Product specification CDMA800 power module BGF802-20 FEATURES PINNING - SOT365C • Typical CDMA IS95 performance at a supply voltage of

Contextual Info: BLF7G20L-160P; BLF7G20LS-160P Power LDMOS transistor Rev. 01 — 22 June 2010 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

W13B

Contextual Info: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 2 — 20 October 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 1805 MHz to

capacitor 2200 uF

Abstract: transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08 ACPR1980 ACPR400 ACPR600 ACPR750
Contextual Info: BLF4G10-160 UHF power LDMOS transistor Rev. 01 — 22 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB test circuit.

ACPR600

Abstract: BLF4G10LS-120 ACPR400 BLF4G10-120 philips electrolytic capacitor
Contextual Info: BLF4G10LS-120 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance

ACPR400

Abstract: ACPR600 BLC6G20-110 BLC6G20LS-110
Contextual Info: BLC6G20-110; BLC6G20LS-110 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1:

thermal compound wps II

Abstract: austerlitz ACPR750 BGF802-20 CDMA800 RO5880 MBL257
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF802-20 CDMA800 power module Product specification Supersedes data of 2003 Feb 24 2003 Jun 13 Philips Semiconductors Product specification CDMA800 power module BGF802-20 FEATURES PINNING - SOT365C • Typical CDMA IS95 performance at a supply voltage of

h2lb

Abstract: STW3101 ACPR400 DCS1800 EGSM900 GSM1800 GSM1900 PCS1900 STW3102 c i 8242
Contextual Info: STW3101 TRANSCEIVER MODULE REV. 1.0 - PRODUCT PREVIEW 1 • ■ ■ ■ FEATURES Triple-band GSM850 / DCS1800 / PCS1900 . Supports data transfer applications in multislots GPRS class-12 EDGE Receive capability Integrates: – BiCMOS6G RF transceiver – 3 Receive Band Pass filters

BGF1801-10

Abstract: BLF1049 BGF944 ACPR400 BGF1901-10 BGF844 BLF0810-90 BLF1820-90 gsm power amplifiers 10 w BLF1
Contextual Info: EDGE GSM amplifiers Modular solutions for for base-stations 800/900/1800/1900 MHz Covering the 800, 900, 1800 and 1900 MHz ranges for power amplifiers in EDGE GSM cellular base-stations, these high-performance solutions combine a 50-Ω driver module with a final-stage transistor. Identical component outlines for

Contextual Info: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 2 — 20 October 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 1805 MHz to

C5750X7R1H106M

Abstract: C3225X7R1H155M RF35 SM270 TRANSISTOR 751
Contextual Info: BLF6G20LS-75 Power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

850 SMD Rework Station

Abstract: BLF7G20LS-140P RF35 quick 850 SMD Rework Station BLF7G20L-140P
Contextual Info: BLF7G20L-140P; BLF7G20LS-140P Power LDMOS transistor Rev. 01 — 21 April 2010 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

ACPR600

Abstract: UF 1301 ACPR400 BLF4G20LS-130 RF35
Contextual Info: BLF4G20LS-130 UHF power LDMOS transistor Rev. 01 — 1 June 2007 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

BLF3G21-30

Abstract: blf2043f SOT89-5A ACPR600 BLF6G22LS-140 blf2043 BLF6G20LS-140 BLF6G21-10 SOT539A ACPR400
Contextual Info: Basestation product portfolio 1-GHz finals and drivers Product Package Matching Mode of operation I/O Frequency band (min - max) Output power Power gain Efficiency Intermodulation distortion (IM3) Adjacent channel leakage ratio (ACLR) Adjacent channel