BLF4G10-160 Search Results
BLF4G10-160 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| BLF4G10-160 |
|
UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB | Original | 116.73KB | 14 | ||
| BLF4G10-160,112 |
|
RF FETs, Discrete Semiconductor Products, TRANSISTOR RF LDMOS SOT502A | Original | 14 |
BLF4G10-160 Price and Stock
NXP Semiconductors
NXP Semiconductors BLF4G10-160,112RF MOSFET LDMOS 28V LDMOST |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BLF4G10-160,112 | Tube |
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