PHILIPS GSM I Q Search Results

Contextual Info: Philips Semiconductors Preliminary specification Image rejecting front-end for GSM applications UAA2073M Image rejection is achieved in the internal architecture by two RF mixers in quadrature and two all-pass filters in I and Q IF channels that phase shift the IF by 45° and 135°

PCD5070

Abstract: baseband GSM BTS PCD5071 GSM signal processing block bts gsm rx unit digital mobile radio GSM software defined radio msc in gsm msc mobile switching center PCF5081
Contextual Info: PHILIPS INTERNATIONAL t,7E D • 711DaEt, QOtiSSlt, TT4 ■ Philips Semiconductors RF Communication* Product» PHIN Preliminary specification GSM baseband processors for digital mobile cellular radio _ PCF5081/PCF5082 GSM Baseband Signal processors

ACPR600

Abstract: BLF4G10LS-120 ACPR400 BLF4G10-120 philips electrolytic capacitor
Contextual Info: BLF4G10LS-120 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance

thermal compound wps II

Abstract: thermal compound wps philips resistor 2322-195 austerlitz heatsink catalogue transistor 6 pin SMD Z2 transistor SMD Z2 BGF1901-10 GSM1900 SR200
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1901-10 GSM1900 EDGE power module Product specification Supersedes data of 2003 Nov 17 2004 Oct 11 Philips Semiconductors Product specification GSM1900 EDGE power module BGF1901-10 FEATURES PINNING - SOT365C • Typical GSM EDGE performance at a supply voltage of

transistor 1892

Abstract: ACPR400 ACPR600 BLC6G20-75 BLC6G20LS-75
Contextual Info: BLC6G20-75; BLC6G20LS-75 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance

smd L6

Abstract: A75 SMD smd L7 SMD L5 UAA2077XM OM5045 SMD phase shifter UAA2077CM an96106 UAA2073AM
Contextual Info: INTEGRATED CIRCUITS AN96106 Image rejecting front ends IC17 Data Handbook Philips Semiconductors 1996 Sept 30 Philips Semiconductors Application Note Image rejecting front ends AN96106 Muriel Gombaud Abstract 2.4 the UAA2077AM, UAA2077BM and UAA2077CM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4–5

thermal compound wps II

Abstract: BGF944 GSM900 SR200 SR400 RO5880 MBL813 gp 940
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF944 GSM900 EDGE power module Product specification Supersedes data of 2003 Feb 26 2003 Jun 06 Philips Semiconductors Product specification GSM900 EDGE power module BGF944 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of

SMD-C6

Abstract: MQE721-178 alps vco SMD-C9 MQE721 MQE001 MQE7 BUS3WIRE.EXE alps dect data interface board book cook
Contextual Info: APPLICATION NOTE UMA1022M Low Voltage, Low Noise Dual Frequency Synthesiser AN98102 Philips Semiconductors Philips Semiconductors UMA1022M Dual Frequency Synthesizer Application Note Abstract The UMA1022M is a low voltage, low noise dual synthesiser. It is intended for radiocommunication

ACPR400

Abstract: ACPR600 BLC6G20-110 BLC6G20LS-110
Contextual Info: BLC6G20-110; BLC6G20LS-110 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1:

UAA3536

Abstract: CGY2015 HVQFN40 GSM Transceiver ZERO-IF PCF506
Contextual Info: Philips Semiconductors The UAA3536 is a low-power GSM triple-band transceiver based on the N-ZIF Near-Zero Intermediate Frequency RF architecture. The UAA3536 is a GSM900/1800/1900 GPRS class 12-capable single-chip RF solution, with edge 4RX capabilities.

thermal compound wps II

Abstract: austerlitz ACPR750 BGF802-20 CDMA800 RO5880 MBL257
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF802-20 CDMA800 power module Product specification Supersedes data of 2003 Feb 24 2003 Jun 13 Philips Semiconductors Product specification CDMA800 power module BGF802-20 FEATURES PINNING - SOT365C • Typical CDMA IS95 performance at a supply voltage of

DECT RF Transceiver 1.9 ghz

Abstract: RF MODULE CIRCUIT DIAGRAM dect BGB100 GSM-900 SOT649 BGB1000
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGB100 0 dBm TrueBlue radio module Preliminary specification 2002 Jan 03 Philips Semiconductors Preliminary specification 0 dBm TrueBlue radio module BGB100 FEATURES APPLICATIONS • Plug-and-play Bluetooth class 2 radio module, needs

Contextual Info: N AUER PHILIPS/DISCRETE b^E T> • bb53T31 0030600 D77 » A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

Contextual Info: N AUER PHILIPS/DISCRETE b^E D • b b S S ^ l 0Q3D7^S ^flT W A P X Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FET_ _ _ GENERAL DESCRIPTION N-channel enhancement mode

K545

Contextual Info: N AI1ER PHILIPS/DISCRETE b 'lE I> bb53R31 DD3D7bS 14E « A P X Product Specification Philips Semiconductors BU K545-1OOA/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

Contextual Info: N AMER PHILIPS/DISCRETE bTE ]> bb53R31 0030610 Tib « A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

Contextual Info: PHILIPS INTERNATIONAL Philips Components Data sheet status Preliminary specification date of issue March 1991 Replaces BUK542-1 OOA/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.

BUK542

Abstract: BUK542-100A BUK542-100B
Contextual Info: PHILIPS INTERNATIONAL bSE ]> • 711QSSb ODbmfll Tbfl ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level GENERAL DESCRIPTION PINNING -SO T186 PIN SYMBOL

BUK555-100A

Abstract: BUK555-100B
Contextual Info: PHILIPS INTERNATIONAL bSE ]> m 7110flSb DDb4E4b 644 • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK555-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

800MHz gsm Handset Circuit Diagram

Contextual Info: ZL20250 2.5G Multimode Transceiver Data Sheet Features • • • • • • • • • • • • September 2003 Quad Band GSM 800/900/1800/1900 MHz Compatible Dual Band IS136 (800/1900 MHz) Compatible GPRS Class 12 and EDGE Capable Fully Integrated Dual Band Transceiver

BUK555-60A

Abstract: BUK555-60B T0220AB
Contextual Info: PHILIPS INT ER NA TI O N AL bSE D • TllQAEb 0DbM241 Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is Intended for use in

BUK573

Abstract: BUK573-100A BUK573-100B
Contextual Info: Philips C om ponents Data sheet status P re lim in a ry s p e c ific a tio n date of issue March 1991 R e p la c e s B U K 5 4 3 -1 0 0 A /B PHILIPS BUK573-100A/B PowerMOS transistor Logic level FET INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode

collins receiver

Abstract: IC vco 900 1800 mhz ADF4001 ADF4106 ADF4111 ADF4112 ADF4113 ADF4206 ADF4252 GSM900
Contextual Info: Ask the Applications Engineer—30 by Adrian Fox [adrian.fox@analog.com] PLL SYNTHESIZERS FREF 13MHz Q. What is a PLL Synthesizer? A. A frequency synthesizer allows the designer to generate a variety of output frequencies as multiples of a single reference frequency.

TRansistor L 701

Abstract: vmk 5 pin BUK995-60A
Contextual Info: Philips Components Data sheet Preliminary specif ication status date of issue March 1991 9 0 BUK995-60A PowerMOS transistor Logic Level SensorFET 5bE D PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode logic level field-effect power transistor in a 5 pin plastic