SOT502A Search Results

T491D476M020AS

Abstract: TRANSISTOR SMD 2X K transistor j127 BLA0912-250 T491D226M020AS
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA0912-250 Avionics LDMOS transistor Preliminary specification 2003 Oct 24 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA0912-250 PINNING - SOT502A FEATURES • High power gain

Contextual Info: BLA0912-250R Avionics LDMOS power transistor Rev. 3 — 1 December 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1048 UHF power LDMOS transistor Preliminary specification Supersedes data of 1998 Jul 07 1998 Aug 05 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1048 PINNING - SOT502A

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2000 Nov 21 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain

multilayer ceramic capacitor philips

Abstract: BLA1011-200
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Product specification Supersedes data of 2001 Apr 17 2001 May 15 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A

transistor d 965 al

Abstract: TRANSISTOR D 471 BLF1048 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1048 UHF power LDMOS transistor Preliminary specification Supersedes data of 1999 July 01 2000 Feb 02 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1048 FEATURES PINNING - SOT502A

SMD0508

Abstract: BLA1011-200
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Product specification Supersedes data of 2002 Mar 18 2003 Nov 11 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A

BLF1048

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D379 BLF1048 UHF power LDMOS transistor Preliminary specification 1999 Jul 12 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1048 PINNING - SOT502A FEATURES • High power gain

200B

Abstract: flange table
Contextual Info: BLL1214-250R LDMOS L-band radar power transistor Rev. 01 — 4 February 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package SOT502A with a ceramic cap. The common source is connected to the

Contextual Info: BLA0912-250R Avionics LDMOS power transistor Rev. 2 — 15 October 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2047 UHF power LDMOS transistor Preliminary specification 1998 Nov 02 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2047 PINNING - SOT502A FEATURES • High power gain

TRANSISTOR CW 7808

Abstract: cw 7808 7808 voltage regulator transistor 7808
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLF1049 UHF power LDMOS transistor Preliminary specification 2001 Oct 09 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1049 PINNING - SOT502A FEATURES • High power gain

smd JH transistor

Abstract: 250 B 340 smd Transistor T491D476M020AS BLA0912-250R J2 JH
Contextual Info: BLA0912-250R Avionics LDMOS power transistor Rev. 3 — 1 December 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

250 B 340 smd Transistor

Abstract: smd JH transistor BLA0912-250 T491D476M020AS
Contextual Info: BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

Contextual Info: Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 5 Q 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b c mm 4.72

Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Aug 06 2003 Aug 29 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 PINNING - SOT502A

NV SMD TRANSISTOR

Abstract: philips resistor TRANSISTOR L2 BLA0912-250 T491D226M020AS T491D476M020AS TANTALUM SMD CAPACITOR JTIDS smd transistor w1 gp3511
Contextual Info: BLA0912-250 Avionics LDMOS transistor Rev. 02 — 22 July 2004 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

Contextual Info: PDF: 2003 Jan 10 Philips Semiconductors Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 5 Q 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions

Contextual Info: BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

smd L19

Abstract: MGU538
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-90 UHF power LDMOS transistor Product specification Supersedes data of 2001 Mar 22 2002 Sep 09 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-90 PINNING - SOT502A

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Product specification Supersedes data of 2001 Mar 02 2001 Apr 17 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A

sot502a

Abstract: q 1257
Contextual Info: PDF: 2000 Jan 10 Philips Semiconductors Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 5 Q 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions

BLA1011-200

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2000 Aug 02 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain

BLA1011-200

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2001 Feb 27 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain