09NH Search Results

Contextual Info: 09NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com

Est 13003

Abstract: Aries Electronics transistor E 13009 cup 10019 tsop 48 PIN SOCKET pin identification plcc thru hole socket 20 32 pin zif connector aries all transistor 13009 torlon transistor 13009
Contextual Info: 8 E DI N TH O EI G H T I INTERCONNECTION & PACKAGING SOLUTIONS SHORTFORM CATALOG For more than a quarter century, Aries has helped solve interconnection and packaging problems with an unusual range of standard, programmed, and custom products. Welcome to Aries!

09nhg

Abstract: NTD4809NHT4G 4809nhg NTD4809NH 369D 48 09NHG
Contextual Info: 09NH Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com

48 09NHG

Abstract: 09nhg a/48 09NHG 369D NTD4809NH NTD4809NHT4G
Contextual Info: 09NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com

Contextual Info: 09NH, 09NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − 09NH

369D

Abstract: NTD4809NH NTD4809NHT1G NTD4809NHT4G
Contextual Info: 09NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com

Contextual Info: 09NH, 09NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − 09NH

09nhg

Abstract: 48 09NHG 4809NH NTD4809NHT4G 369D NTD4809NH 4809NHG
Contextual Info: 09NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com

09nhg

Abstract: 4809nhg 48 09NHG 369D NTD4809NH 4809NH NTD4809NH-1G
Contextual Info: 09NH Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com