NTD4809NHT4G Search Results

NTD4809NHT4G Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NTD4809NHT4G		On Semiconductor	Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK	Original	PDF	79.87KB	8

NTD4809NHT4G Price and Stock

Filter by Manufacturer

Select Manufacturer


Rochester Electronics LLC NTD4809NHT4G MOSFET N-CH 30V 9.6A/58A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTD4809NHT4G	Bulk	142,167		993	1 - 10 - 100 - 1000 $0.30 10000 $0.30	Buy Now
onsemi NTD4809NHT4G MOSFET N-CH 30V 9.6A/58A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	NTD4809NHT4G	Digi-Reel			1	1 $0.57 10 $0.57 100 $0.57 1000 $0.57 10000 $0.57	Buy Now
	NTD4809NHT4G	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	NTD4809NHT4G	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Verical ()	NTD4809NHT4G		104,534		1,244	1 - 10 - 100 - 1000 - 10000 $0.27	Buy Now
	NTD4809NHT4G		27,453		1,244	1 - 10 - 100 - 1000 - 10000 $0.27	Buy Now
	NTD4809NHT4G		10,000		1,244	1 - 10 - 100 - 1000 - 10000 $0.27	Buy Now
Quest Components	NTD4809NHT4G		98			1 $0.48 10 $0.48 100 $0.32 1000 $0.32 10000 $0.32	Buy Now
Rochester Electronics	NTD4809NHT4G		142,167		1	1 - 10 - 100 $0.29 1000 $0.24 10000 $0.21	Buy Now
Chip Stock	NTD4809NHT4G		17,539			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Win Source Electronics	NTD4809NHT4G		14,039			1 - 10 - 100 - 1000 $0.24 10000 $0.21	Buy Now

NTD4809NHT4G Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: NTD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	NTD4809NH NTD4809NH/D	PDF
09nhg Abstract: NTD4809NHT4G 4809nhg NTD4809NH 369D 48 09NHG Contextual Info: NTD4809NH Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com	Original	NTD4809NH NTD4809NH/D 09nhg NTD4809NHT4G 4809nhg NTD4809NH 369D 48 09NHG	PDF
NTP2955G Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G Contextual Info: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature	Original	CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G	PDF
48 09NHG Abstract: 09nhg a/48 09NHG 369D NTD4809NH NTD4809NHT4G Contextual Info: NTD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	NTD4809NH NTD4809NH/D 48 09NHG 09nhg a/48 09NHG 369D NTD4809NH NTD4809NHT4G	PDF
Contextual Info: NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4809NH	Original	NTD4809NH, NVD4809NH AEC-Q101 NTD4809NH/D	PDF
369D Abstract: NTD4809NH NTD4809NHT1G NTD4809NHT4G Contextual Info: NTD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	NTD4809NH NTD4809NH/D 369D NTD4809NH NTD4809NHT1G NTD4809NHT4G	PDF
Contextual Info: NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4809NH	Original	NTD4809NH, NVD4809NH NTD4809NH/D	PDF
09nhg Abstract: 48 09NHG 4809NH NTD4809NHT4G 369D NTD4809NH 4809NHG Contextual Info: NTD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	NTD4809NH NTD4809NH/D 09nhg 48 09NHG 4809NH NTD4809NHT4G 369D NTD4809NH 4809NHG	PDF
09nhg Abstract: 4809nhg 48 09NHG 369D NTD4809NH 4809NH NTD4809NH-1G Contextual Info: NTD4809NH Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com	Original	NTD4809NH NTD4809NH/D 09nhg 4809nhg 48 09NHG 369D NTD4809NH 4809NH NTD4809NH-1G	PDF