BL53 Search Results

BL5373

Abstract: RS5C372
Contextual Info: 上海贝岭股份 上海贝岭股份有限公司 股份有限公司 BL5373 BL5373 用户手册 Shanghai Belling Co., Ltd. 低功耗实时时钟芯片 RTC 低功耗实时时钟芯片(RTC)BL5373 (RTC)BL5373 用 户 手 册 v 1. 0 ( 20102010-7-8) 上海贝岭股份有限公司

Contextual Info: bL53131 005033S T 2SE D N AMER PHILIPS/DISCRETE P o w e rM O S tra n s is to r B U K 4 4 2-60 A B U K 442-60B T - G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

1N821

Abstract: N821 1N821A 1N825 N821A DIODE 1N825 1N827A 1N823 1N827 1N829
Contextual Info: • bL53T31 002L.flfl5 Mb? H A PX N AMER PHILIPS/DISCRETE b^E 1N821 to 1N829 1N821A to 1N829A J> VOLTAGE REFERENCE DIODES Voltage reference diodes in a DO-34 envelope. They have a very low temperature coefficient and are primarily intended for use as voltage reference sources in measuring instruments such as digital

IEC134

Abstract: PTB42001X PTB42002X RTC4202X
Contextual Info: N AMER PHILIPS/DISCRETE ObE D bL53T31 0015111 7 • PTB4200ÌX PTB42002X T ­ r - 3 3 -< ? 7 MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base c!ass-B power amplifiers up to 4 ,2 GHz. . Diffused em itter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

Contextual Info: BL5362 Low Power Real-Time Clock RTC SHANGHAI BELLING GENERAL DESCRIPTION FEATURES The BL5362 is a CMOS type real-time clock, which is connected to the CPU via two wires and capable of serial transmission of clock to the CPU. Since an oscillation circuit is driven

Contextual Info: • bL53T31 0025b57 8^13 « A P X N AMER PHILIPS/D ISCR ETE b?E ]> BST86 J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed fo r use as Surface Mounted Device SMD in th in and th ick-film circuits fo r application w ith relay, high-speed

Two Digit bcd counter diagram

Abstract: BL5372 BL5373
Contextual Info: BL5373 Low Power Real-Time Clock RTC SHANGHAI BELLING GENERAL DESCRIPTION The BL5373 is a CMOS type real-time clock, which is connected to the CPU via two wires and capable of serial transmission of clock to the CPU. The BL5373 can generate various periodic interrupt clock pulses lasting for long

application for bt 151

Abstract: LTE42005S LTE42008R R3305
Contextual Info: Jl N AMER PHILIPS/DISCRET E ObE D • bL53131 O D m ^ b ? b I LTE42005S LTE42008R MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4,2 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich

BL5362

Contextual Info: 低功耗实时时钟芯片 RTC BL5362 低功耗实时时钟芯片(RTC)BL5362 低功耗实时时钟芯片(RTC)BL5362 1．概述 BL5362 是一款低功耗实时时钟电路，通过两线接口电路可以与 CPU 实时通信。主要用于一切需要提 供时基的系统中。BL5362 内部集成一低功耗的稳压电源，故能够使恶劣的环境条件下仍能保持振荡器正

BL5372

Abstract: 32.768khz 5ppm RS5C372A 32000K intrb
Contextual Info: 低功耗实时时钟芯片 RTC BL5372 低功耗实时时钟芯片(RTC)BL5372 低功耗实时时钟芯片(RTC)BL5372 1．概述 2 BL5372 是一款低功耗实时时钟电路，通过 I C 两线接口电路可以与 CPU 实时通信，主要用于一切需

BL5372

Abstract: 32.768 khz crystal 5ppm AAH10 AM20 RS5C372A BH-10 BH20
Contextual Info: 上海贝岭股份 上海贝岭股份有限公司 股份有限公司 BL5372 用户手册 Shanghai Belling Co., Ltd. 低功耗实时时钟芯片 RTC BL5372 低功耗实时时钟芯片(RTC)BL5372 用 户 手 册 v 1. 2 ( 20102010-5-18) 18) 上海贝岭股份有限公司

BST86

Abstract: TRANSISTOR SMD 2X y TRANSISTOR SMD 2X K smd transistor marking TL transistor smd marking JT smd transistor marking u d
Contextual Info: • bL53T31 D0SSb57 fl43 * A P X N AflER PHILIPS/DISCRETE BST86 b?E ]> N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancem ent m ode ve rtica l D-MOS tran sisto r in SO T89 envelope and designed fo r use as Surface M ounted Device SMD in th in and th ic k -film circ u its fo r a p p lica tio n w ith relay, high-speed

transistor 667

Contextual Info: ^^53^31 0035133 404 APX Philips S em iconductors Product specification N AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES • L7E 1 e BFR93A PINNING PIN High power gain DESCRIPTION • Low noise figure • Very low intermodulation distortion 2

Contextual Info: N AMER PHILIPS/DISCRETE 25E D • ^53= 131 00 20 7 0 0 7 BUK657-400A BUK657-400B PowerMOS transistor Fast Recovery Diode FET r - 37-/3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

xgold 118

Contextual Info: Intel Atom Processor S1200 Product Family for Microserver Datasheet, Volume 1 of 2 December 2012 Document Number: 328194-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS

optocoupler a 3131

Abstract: optocoupler 3131 optocoupler LP 250 3131 optocoupler MCT26 314 optocoupler L002 optocoupler 450 rfu20
Contextual Info: J\_ MCT26 T O OPTOCOUPLER Optocoupler in a Dl L plastic envelope. The MCT26 comprises an infrared GaAs diode and a npn silicon phototransistor. UL — Covered under UL component recognition FILE E 90700 VDE — Approved according to VDE 0883/6.80 Reference voltage VDE 0110b Tab 4 : AC 380 V/DC 450 V - isolation group C

metal rectifier diode 40A

Abstract: BYV18 BYV18-30 BYV18-35 BYV18-40A M0796
Contextual Info: I I N AMER PHILIPS/DISCRETE □ bE D ^53=131 G011E43 4 BYV18 SERIES T-03-17 SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance and absence o f stored charge . They are intended for use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and

ECG1278

Abstract: Philips KS 40 Temperature Control 47MF 47UF A6006
Contextual Info: PHILIPS E C G INC ECG 17E tbS3T2fi ODO4flb3 5 T-74-05-01 ECG1278 S e m ic o n d u c to rs 5.8 W Audio Power Amplifier Features — I.08h 27 MAX.- • • • • • Few external components Adjustable closed-loop gain Excellent overvoltage handling

BUK627-400A

Abstract: BUK627-400B ha 431 transistor transistor 431 N
Contextual Info: N AMER P H I L I P S / D I S C R E T E BSE D • ^53=131 0020bS0 7 ■ PowerMOS transistor Fast Recovery Diode FET BUK627-400A BUK627-400B T -3 7 -II GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic full pack envelope.

induction cooker fault finding diagrams

Abstract: enamelled copper wire swg table AC digital voltmeter using 7107 wiring diagram IEC320 C14 Inlet Male Power Socket Fuse Switch db 3202 diac siemens mkl capacitor YY63T varta CR123A HXD BUZZER lt700 transformer
Contextual Info: 03front order p1_3 1/29/02 3:01 PM C3 Page 1 components cables & connectors actives 18 57 semiconductors optoelectronics passives contents 72 81 87 91 capacitors resistors transformers, ferrites & inductors emc, filters & suppression electromechanical 92 120

intel PC MOTHERBOARD CIRCUIT diagram x86 family 6 model 7 stepping 3

Abstract: MSI G41 MOTHERBOARD CIRCUIT diagram STR 6757 OF equivalent MSI G31 Motherboard g41 msi motherboard circuit diagram INTEL 845 MOTHERBOARD CIRCUIT diagram xeon e5 cpuid philips semiconductor data handbook JESD-A103 LGA-2011
Contextual Info: Intel Xeon® Processor E5-1600/ E5-2600/E5-4600 Product Families Datasheet - Volume One May 2012 Reference Number: 326508, Revision: 002 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

PBL302

Abstract: kbp 3510 m5818 r 1504 C3510W
Contextual Info: ALPHANUMERICAL INDEX PARTS NO. PAG E PARTS PAG E PARTS PAG E PARTS NO. NO. NO. NO. NO. N O. N O. 1N 4001 . . . . . . 150 . 128 E R 1007 . . . . . . 84 K BP 01G . . . . 1N 5401G . . . . . . . . 126 1 N 4 0 0 1 G L . . . . . 12 4 1N5402 . . . . . 158 A R 2 5 0 8 G . . . . . 136

Contextual Info: Philips Components Data sheet status Product specification date of Issue October 1990 2N7000 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA FE A T U R E S . L o w R 0S on SYM BOL • Direct interface to C-M O S, TTL,