BL-27 MHZ Search Results

Contextual Info: S i GEC PLESSEY ADVANCE INFORMATION SE MI CONDUCT ORS VP510 Bl DIRECTIONAL COLOUR SPACE CONVERTER FEATURES DESCRIPTION • User definable colour space conversion I Sampling rates up to 27 MHz I On chip decimating or interpolating FIR filters ■ Conversion from 24 bit inputs to 16 bit outputs or vice

F54 ONS

Contextual Info: P S H G E C PLESSEY ADVANCE INFORMATION DS3507-1.6 VP510 Bl DIRECTIONAL COLOUR SPACE CONVERTER DESCRIPTION FEATURES B B B B B B User definable colour space conversion Sampling rates up to 27 MHz On chip decimating or interpolating FIR filters Conversion from 24 bit inputs to 16 bit outputs or vice

Contextual Info: GEC PLESSEY w . S l M i t O N D I . I O ADVANCE INFORMATION H S VP510 Bl DIRECTIONAL COLOUR SPACE CONVERTER DESCRIPTION FEATURES H User definable colour space conversion I Sampling rates up to 27 MHz U On chip decimating or interpolating FIR filters I Conversion from 24 bit inputs to 16 bit outputs or vice

Contextual Info: White Electronic Designs W3EG7236S-D3 PRELIMINARY* 256MB - 32Mx72 DDR SDRAM REGISTERED, w/PLL FEATURES DESCRIPTION Speeds of 100MHz and 133 MHz The W3EG7236S is a 32Mx72 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM component. The module consists of nine

transistor SMD DKL

Abstract: BA5 marking MARKING SMD x9 Micron DDR marking H12 smd cod A22 SMD MARKING CODE A53 SMD Marking Code marking BAX marking code a02 SMD Transistor Marking D1c
Contextual Info: 288Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II Features 288Mb CIO Reduced Latency RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate)

MT49H16M18C

Contextual Info: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O

MT49H16M18C

Contextual Info: PRELIMINARY‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O

BA5 marking

Abstract: BA7 marking plastic BA5 marking code A53 SMD Marking Code ba7 transistor SMD MARKING CODE ACY MT49H16M18C smd cod RLDRAM A22 SMD MARKING CODE
Contextual Info: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O

15READ

Abstract: marking ba5 MT49H8M18C MT49H16M18C
Contextual Info: 288Mb: 16 Meg x 18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features 288Mb SIO Reduced Latency RLDRAM II MT49H16M18C For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate)

DDR200

Abstract: DDR266 W3EG7236S-D3
Contextual Info: White Electronic Designs W3EG7236S-D3 PRELIMINARY* 256MB – 32Mx72 DDR SDRAM REGISTERED, w/PLL FEATURES DESCRIPTION Speeds of 100MHz and 133 MHz The W3EG7236S is a 32Mx72 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM component. The module consists of nine

09005aef809f284b

Contextual Info: 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9‡ Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization

MT49H16M18

Contextual Info: 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization

RLDRAM

Abstract: MT49H16M18C
Contextual Info: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM 2 Features SIO RLDRAM 2 MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization

Contextual Info: White Electronic Designs W3EG7236S-D3 PRELIMINARY* 256MB – 32Mx72 DDR SDRAM REGISTERED, w/PLL FEATURES DESCRIPTION Speeds of 100MHz and 133 MHz The W3EG7236S is a 32Mx72 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM component. The module consists of nine

09005aef809f284b

Contextual Info: 288Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II Features 288Mb CIO Reduced Latency RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization 8 Meg x 36, 16 Meg x 18, and 32 Meg x 9

hspice MT49H16M36

Abstract: MT49H16M36FM MT49H16M36 MT49H32M18FM
Contextual Info: Advance‡ 576Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II Features 576Mb CIO Reduced Latency RLDRAM II MT49H16M36 MT49H32M18 MT49H64M9 For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 533 MHz DDR operation (1,067 Mb/s/pin data rate)

Contextual Info: HV577 24 MHz, 64-Channel Serial To Parallel Converter With Push-Pull Outputs Ordering Information Package Options Device 80 Lead Quad Ceramic Gullwing 80 Lead Quad Plastic Gullwing Die 80 Lead Quad Ceramic Gullwing MIL-STD-883 Processed* HV577 HV57708DG

HV577

Abstract: HV57708 HV57708DG HV57708PG HV57708T HV57708X RBHV57708DG push-pull converter 80V 15A
Contextual Info: HV57708 32 MHz, 64-Channel Serial To Parallel Converter With Push-Pull Outputs Ordering Information Package Options Device 80 Lead Quad Ceramic Gullwing 80 Lead Quad Plastic Gullwing MIL-STD-883 Processed* Die 80 Lead Quad Ceramic Gullwing (MIL-STD-883 Processed*)

Contextual Info: HV579 8 MHz, 64-Channel Serial To Parallel Converter With Push-Pull Outputs Ordering Information Package Options Device 80 Lead Quad Ceramic Gullwing 80 Lead Quad Plastic Gullwing Die 80 Lead Quad Ceramic Gullwing MIL-STD-883 Processed* HV579 HV57908DG HV57908PG

HV77 Supertex

Contextual Info: ^ . HV77 Supertex ine 32 MHz, 64-Channel Serial To Parallel Converter With Push-Pull Outputs Ordering Information Package Options Device 80 Lead Quad Ceramic Gullwlng 80 Lead Quad Plastic Gullwlng Die 80 Lead Quad Ceramic Gullwing MIL-STD-883 Processed"

09005aef815b2df8

Abstract: MT49H32M18C
Contextual Info: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Figure 1: • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 19.2 Gb/s peak bandwidth (x18 at 533 MHz clock

Contextual Info: Supertex inc. HV57708 32 MHz, 64-Channel Serial To Parallel Converter With Push-Pull Outputs Ordering Information Package Options Device HV57708 80 Lead Quad Ceramic Gullwing 80 Lead Quad Plastic Gullwing MIL-STD-883 Processed* Die 80 Lead Quad Ceramic Gullwing

HV7708PG

Abstract: HV77 HV577
Contextual Info: HV77 yj Supertax inc. h v s ? HV79 32 MHz, 64-Channel Serial To Parallel Converter With Push-Pull Outputs Ordering Information Package Options Device 80 Lead Quad Ceramic Gullwing 80 Lead Quad Plastic Gullwing Die 80 Lead Quad Ceramic Gullwing MIL-STD-883 Processed*)

Contextual Info: HV78 Preliminary 16 MHz, 64-Channel Serial To Parallel Converter With Push-Pull Outputs Ordering Information Package Options Device 80 Lead Quad Ceramic Gullwing 80 Lead Quad Plastic Gullwing Die 80 Lead Quad Ceramic Gullwing MIL-STD-883 Processed* HV78