BL-27 MHZ Search Results

Contextual Info: S i GEC PLESSEY ADVANCE INFORMATION SE MI CONDUCT ORS VP510 Bl DIRECTIONAL COLOUR SPACE CONVERTER FEATURES DESCRIPTION • User definable colour space conversion I Sampling rates up to 27 MHz I On chip decimating or interpolating FIR filters ■ Conversion from 24 bit inputs to 16 bit outputs or vice

F54 ONS

Contextual Info: P S H G E C PLESSEY ADVANCE INFORMATION DS3507-1.6 VP510 Bl DIRECTIONAL COLOUR SPACE CONVERTER DESCRIPTION FEATURES B B B B B B User definable colour space conversion Sampling rates up to 27 MHz On chip decimating or interpolating FIR filters Conversion from 24 bit inputs to 16 bit outputs or vice

Contextual Info: GEC PLESSEY w . S l M i t O N D I . I O ADVANCE INFORMATION H S VP510 Bl DIRECTIONAL COLOUR SPACE CONVERTER DESCRIPTION FEATURES H User definable colour space conversion I Sampling rates up to 27 MHz U On chip decimating or interpolating FIR filters I Conversion from 24 bit inputs to 16 bit outputs or vice

TP5087

Abstract: TPS087
Contextual Info: NATL S E M I C O N D •■CO co IO Q . I - o > o -CLINEARI bl DlF| t.S011E4 0 D 4 ci311 2 | ~ 6501124 NATL S E M I C O N D , LINEAR r tic <*9311 - National1 Semiconductor T-75-27-09 .0 PRELIMINARY TP5087/TP5092/TP5094/TP5380 IO CL DTMF (TOUCH-TONE) Generators

FGG456

Abstract: LVDSEXT-25 FGG676
Contextual Info: 0<BL Blue> Spartan-3 Automotive XA FPGA Family: Introduction and Ordering R DS314-1 v1.2 October 27, 2006 Product Specification Summary The Xilinx Automotive (XA) Spartan -3 family of Field-Programmable Gate Arrays meets the needs of high-volume, cost-sensitive automotive electronic applications. The five-member family offers densities ranging from 50,000 to 1.5 million

Contextual Info: fife Si GF C PTFSSFY J a n u a r y 1993 PRELIMINARY INFORMATION S E M I C O N D U C T O R S VP510 Bl DIRECTIONAL COLOUR SPACE CONVERTER FEATURES DESCRIPTION • U ser d e fin a b le co lo u r spa ce con version H S am p lin g rates up to 27 MHz H O n ch ip d e cim a ting or in te rpo latin g FIR filters

Contextual Info: White Electronic Designs W3EG7236S-D3 PRELIMINARY* 256MB - 32Mx72 DDR SDRAM REGISTERED, w/PLL FEATURES DESCRIPTION Speeds of 100MHz and 133 MHz The W3EG7236S is a 32Mx72 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM component. The module consists of nine

transistor SMD DKL

Abstract: BA5 marking MARKING SMD x9 Micron DDR marking H12 smd cod A22 SMD MARKING CODE A53 SMD Marking Code marking BAX marking code a02 SMD Transistor Marking D1c
Contextual Info: 288Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II Features 288Mb CIO Reduced Latency RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate)

MT49H16M18C

Contextual Info: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O

MT49H16M18C

Contextual Info: PRELIMINARY‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O

BA5 marking

Abstract: BA7 marking plastic BA5 marking code A53 SMD Marking Code ba7 transistor SMD MARKING CODE ACY MT49H16M18C smd cod RLDRAM A22 SMD MARKING CODE
Contextual Info: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O

15READ

Abstract: marking ba5 MT49H8M18C MT49H16M18C
Contextual Info: 288Mb: 16 Meg x 18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features 288Mb SIO Reduced Latency RLDRAM II MT49H16M18C For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate)

DDR200

Abstract: DDR266 W3EG7236S-D3
Contextual Info: White Electronic Designs W3EG7236S-D3 PRELIMINARY* 256MB – 32Mx72 DDR SDRAM REGISTERED, w/PLL FEATURES DESCRIPTION Speeds of 100MHz and 133 MHz The W3EG7236S is a 32Mx72 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM component. The module consists of nine

Contextual Info: White Electronic Designs W3EG7236S-D3 PRELIMINARY* 256MB – 32Mx72 DDR SDRAM REGISTERED, w/PLL FEATURES DESCRIPTION Speeds of 100MHz and 133 MHz The W3EG7236S is a 32Mx72 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM component. The module consists of nine

MT49H16M18

Contextual Info: 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization

RLDRAM

Abstract: MT49H16M18C
Contextual Info: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM 2 Features SIO RLDRAM 2 MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization

Contextual Info: White Electronic Designs W3EG7236S-D3 PRELIMINARY* 256MB – 32Mx72 DDR SDRAM REGISTERED, w/PLL FEATURES DESCRIPTION Speeds of 100MHz and 133 MHz The W3EG7236S is a 32Mx72 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM component. The module consists of nine

MT49H16M18C

Contextual Info: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization

09005aef809f284b

Contextual Info: 288Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II Features 288Mb CIO Reduced Latency RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization 8 Meg x 36, 16 Meg x 18, and 32 Meg x 9

HV579

Abstract: HV57908 HV57908DG HV57908PG HV57908X RBHV57908DG
Contextual Info: HV57908 8 MHz, 64-Channel Serial To Parallel Converter With Push-Pull Outputs Ordering Information Package Options Device 80 Lead Quad Ceramic Gullwing 80 Lead Quad Plastic Gullwing Die 80 Lead Quad Ceramic Gullwing MIL-STD-883 Processed* HV57908DG HV57908PG

hspice MT49H16M36

Abstract: MT49H16M36FM MT49H16M36 MT49H32M18FM
Contextual Info: Advance‡ 576Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II Features 576Mb CIO Reduced Latency RLDRAM II MT49H16M36 MT49H32M18 MT49H64M9 For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 533 MHz DDR operation (1,067 Mb/s/pin data rate)

EM639165

Abstract: EM639165TS EM639
Contextual Info: EtronTech EM639165 8Mega x 16bits SDRAM Preliminary Rev 1.0, 2/2001 Features Pin Assignment (Top View) • Single 3.3 ± 0.3V power supply • Fast clock rate - PC133: 133 MHz (CL3) - PC100: 100 MHz (CL2) • Fully synchronous operation referenced to clock

Contextual Info: HV577 24 MHz, 64-Channel Serial To Parallel Converter With Push-Pull Outputs Ordering Information Package Options Device 80 Lead Quad Ceramic Gullwing 80 Lead Quad Plastic Gullwing Die 80 Lead Quad Ceramic Gullwing MIL-STD-883 Processed* HV577 HV57708DG

HV577

Abstract: HV57708 HV57708DG HV57708PG HV57708T HV57708X RBHV57708DG push-pull converter 80V 15A
Contextual Info: HV57708 32 MHz, 64-Channel Serial To Parallel Converter With Push-Pull Outputs Ordering Information Package Options Device 80 Lead Quad Ceramic Gullwing 80 Lead Quad Plastic Gullwing MIL-STD-883 Processed* Die 80 Lead Quad Ceramic Gullwing (MIL-STD-883 Processed*)