TDD 1605
Abstract: lt 6029 PLCC-44 cr16 0.8um tg-500 L3000N L3000S PLCC44 SEL24 STLC3040
Contextual Info: STLC3040 S U BSC R IBER LINE INTERFACE CODEC FILTER, CO FISLIC PRELIM IN ARY DATA PLCC44 O RDERING NUM BER: STLC3040FN Figure 1 : Pin Connection Top view o > [ « [ <° \ Single chip CODEC and FILTER including all LOW-VOLTAGE SLIC functions. Advanced 12V BJT, 5V CMOS 0.8um technol
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stlc3040plcc44tdd 1605lt 6029+6plcc-44 cr160.8umtg-500l3000nl3000ssel24
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UTC TDA2822
Abstract: BJT8050 TDA2822 s GF06 TDA28 JP13 JP16 PA15 0.1uf 0603 vr-10k
Contextual Info: eSLZ000 EMFeSL XC Board for eSL Series 16-Bit DSP Sound Processor USER’S HANDBOOK Doc. Version V0.1 ELAN MICROELECTRONICS CORP. April 2008 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.
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eslz00016-bit0x00000x0001+120x80000x0004utc tda2822bjt8050tda2822 sgf06tda28jp13jp16pa150.1uf 0603vr-10k
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rca 17520
Abstract: TRANSISTOR SMD nc46 8050 smd 3 pin transistor ice 0565 SMD TRANSISTOR ss 8050 transistor 8050 smd smd 8050 transistor 8050 smd transistor smd transistor 8050 pa15 transistor
Contextual Info: ICEeSL-U XA In-Circuit Emulation Board for eSL/eAM Series 16-Bit DSP Sound Processor USER’S HANDBOOK Doc. Version V0.2 ELAN MICROELECTRONICS CORP. August 2006 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.
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16-bitrca 17520transistor smd nc468050 smd 3 pin transistor+7ice 0565smd transistor ss 8050transistor 8050 smdsmd 8050 transistor8050 smd transistorsmd transistor 8050pa15 transistor
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full bridge mosfet smps
Abstract: Full-bridge series resonant converter Full bridge SMPS ZVT full bridge ZVT full bridge for welding make full-bridge SMPS smps* ZVT ZVS DRIVER PCIM 95 IRFP450A
Contextual Info: MOSFET Failure Modes in the Zero-Voltage-Switched Full-Bridge Switching Mode Power Supply Applications Alexander Fiel and Thomas Wu International Rectifier Applications Department El Segundo, CA 90245, USA Abstract-As the demand for the telecom/server power is
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zero-voltag23-32full bridge mosfet smpsfull-bridge series resonant converterfull bridge smps+7zvt full bridgezvt full bridge for weldingmake full-bridge smpssmps* zvtzvs driverpcim 95irfp450a
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mos Turn-off Thyristor
Abstract: SiC BJT pnp transistor 1000v BJT Gate Drive circuit fast thyristor 1000V MOS Controlled Thyristor
Contextual Info: rZ J SCS-THOMSON ~7w m R 0 [H ]© i[L i© U É © M D © S t e c h n ic a l n o te AN INTRODUCTION TO HIMOS INTRODUCTION The structure and characteristics of HIMOS High Injection MOS devices, provide circuit designers with an INSULATED GATE BIPOLAR TRANSI
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mos turn-off thyristorsic bjtpnp transistor 1000vbjt gate drive circuit+2fast thyristor 1000vmos controlled thyristor
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pnp transistor 1000v
Abstract: mos Turn-off Thyristor applications of mos controlled thyristor 1000V 2A BJT SGSP363
Contextual Info: n ^ rz 7 # , S G S -T H O M S O N 5 [L [I T [H ] M D © Ì T E C H N IC A L N O TE AN INTRODUCTION TO HIMOS INTRODUCTION The structure and characteristics of HIMOS (High Injection MOS) devices, provide circuit designers with an INSULATED GATE BIPOLAR TRANSI
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pnp transistor 1000vmos turn-off thyristorapplications of mos controlled thyristor1000v 2a bjt+1sgsp363
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80500 TRANSISTOR
Abstract: LB 1639 4435 027P 157600 NE68818 2SC5191 2SC5193 2SC5194 2SC5195
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE
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ne688ne68818-t1ne68819-t1ne68830-t1+14ne68833-t1ne68839-t1ne68839r-t134-6393/fax80500 transistorlb 16394435027p157600ne688182sc51912sc51932sc51942sc5195
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IC NE 5514
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES_ • • • • LOW PHASE NOISE DISTORTION LOW NOISE: 1.5 dB at 2 .0 G H z LOW VOLTAGE OPERATION LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: Ic M A X = 100 mA
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ne688ne68800ne68818-t1ne68819-t1+5ne68830-t1ne68833-t1ne68839-t1ne68839r-t1ic ne 5514
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NE68819
Abstract: ic NE 5532 LS 1017 BJT BF 331 2SC5193 2SC5194 2SC5195 NE688 NE68818 NE68830
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE
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BJT BF 331
Abstract: NE68819 NE68833 NE688 SERIES 901 704 16 08 55 2SC5191 2SC5193 2SC5194 2SC5195 NE688
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE
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ne688ne68800ne68818-t1ne68819-t1+13ne68830-t1ne68833-t1ne68839-t1ne68839r-t1bjt bf 331ne68819ne68833ne688 series901 704 16 08 552sc51912sc51932sc51942sc5195
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LB 1639
Abstract: C 4804 transistor
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE
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ne6888839rne68818-t1ne68819-t1+6ne68830-t1ne68833-t1ne68839-t1ne68839r-t1lb 1639c 4804 transistor
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opto 22 cjc
Abstract: E6881 L 26400 IC
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES_ • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: Ic MAX = 100 mA 18 SOT 343 STYLE
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ne688ue68839-t1ne68839r-t124-hour+3opto 22 cjce6881l 26400 ic
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reverse-conducting thyristor
Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
Contextual Info: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate
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mct00reverse-conducting thyristorgto gate drive circuitigct thyristor+7igct mitsubishiusha rectifieremitter turn-off thyristoreto thyristorgto triachexfet power mosfet designer manualmos-controlled thyristor
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NE68830-T1-A
Abstract: 2SC5193 2SC5194 2SC5195 NE688 NE68818 NE68819 NE68830 NE68833 131300
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE
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014e1
Abstract: cce 7100 transistor d 13009 br 8764 CD 5888 cb ic CD 5888 CB bf 0252 ha 14052 transistor j 13009 NE68530
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES_ • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES ♦ • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fr of 1 2 GHz • NOISE FIGURES OF 1.5 dB AT ZQ GHZ
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ne685ne68518-t1ne68519-t1e68530-t1+14ne68533-t1ne68539-t1ne68539r-t124-hour014e1cce 7100transistor d 13009br 8764cd 5888 cb iccd 5888 cbbf 0252ha 14052transistor j 13009ne68530
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mje 1303
Abstract: transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 NE68019-T1 15T09 model RB-30 S PT 100
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: It =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
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ne680ne68qne68800ne68018-t1+10ne68019-t1ne68030-t1ne68033-t1bmje 1303transistor nec d 882 p 6vsg 3852opt5002sc500815t09model rb-30 s pt 100
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cce 7100
Abstract: 85500 transistor br 8764 cce 7100 0913 transistor d 13009 BF109 NE685 539r P 13009 0803 2SC4959
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz • NOISE FIGURES OF 1.5 dB AT 2.0 GHZ 18 SOT 343 STYLE
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ne685cce 710085500 transistorbr 8764+6cce 7100 0913transistor d 13009bf109539rp 13009 08032sc4959
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702 TRANSISTOR sot-23
Abstract: mje 1303 common emitter bjt transistor kf 508 IC CD 3207 BJT BF 331
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
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ne680ne68800ne68018-t1ne68019-t1+8ne68030-t1ne68033-t1b702 transistor sot-23mje 1303common emitter bjttransistor kf 508ic cd 3207bjt bf 331
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cce 7100
Abstract: 85500 transistor br 8764 NE685 NE68530 cce 7100 1053 BJT BF 167 BJT IC Vce 2SC4959 2SC5010
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz • NOISE FIGURES OF 1.5 dB AT 2.0 GHZ 18 SOT 343 STYLE
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ne685ne68518-t1ne68519-t1ne68530-t1+13ne68533-t1ne68539-t1ne68539r-t124-hourcce 710085500 transistorbr 8764ne68530cce 7100 1053bjt bf 167bjt ic vce2sc49592sc5010
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85500 transistor
Abstract: transistor d 13009 NPN Transistor 13009 transistor MJE 13009 k 13009 c 5929 transistor transistor E 13009 BR 13009 NE685 CCE 7100
Contextual Info: SILICON TRANSISTOR NE685 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SUPER
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ne6858539rne68518-t1-ane68519-t1-a+13ne68530-t1-ane68533-t1-ane68539-t1-ane68539r-t185500 transistortransistor d 13009npn transistor 13009transistor mje 13009k 13009c 5929 transistortransistor e 13009br 13009cce 7100
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cce 7100
Abstract: 85500 transistor 2SC4955 NE68519-T1 2SC4959 2SC5010 2SC5015 NE685 NE68518 NE68519
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz • NOISE FIGURES OF 1.5 dB AT 2.0 GHZ 18 SOT 343 STYLE
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philips ecg master replacement guide
Abstract: ecg semiconductors master replacement guide ECG transistor replacement guide book free philips ecg semiconductors master replacement guide oz 8602 gn AC digital voltmeter using 7107 smd glass zener diode color codes cd 1619 CP fm radio russian transistor cross-reference yd 7377
Contextual Info: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete
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philips ecg master replacement guideecg semiconductors master replacement guideecg transistor replacement guide book freephilips ecg semiconductors master replacement guide+6oz 8602 gnac digital voltmeter using 7107smd glass zener diode color codescd 1619 cp fm radiorussian transistor cross-referenceyd 7377
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2SK1058 MOSFET APPLICATION NOTES
Abstract: BD139 heat sink lm4702 OUTPUT STAGE INFORMATION 2sk1058 2SJ162 2SK1058 specification of 2SK1058 LM4702 BJT BD139 BJT small signal low power BD139 transistor 2sj162
Contextual Info: Introduction How To Choose A MOSFET This application note provides supporting design information regarding National Semiconductor’s newest offering of highperformance, ultra high-fidelity audio amplifier driver ICs. The LM4702 and its derivatives provide a highly reliable, fully
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lm4702an-16452sk1058 mosfet application notesbd139 heat sink+7lm4702 output stage information2sk1058 2sj1622sk1058specification of 2sk1058bjt bd139bjt small signal low power bd139transistor 2sj162
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nsa937901
Abstract: NSA937901M2202 nas 1749 EN3155 Cross Reference en3155 m39029 EN3155-016M2018 NSA937901M2206 NSA937901M1202 001104 203 02 mil spec M81714
Contextual Info: Modules de distribution à jonction rapide Quick junction modules Edition 05/12 Amphenol Air LB SYSTEMES DE CONNEXIONS ELECTRIQUES ET ELECTRONIQUES ELECTRIC AND ELECTRONIC CONNECTION SYSTEMS SOMMAIRE TABLE OF CONTENTS MODULES TYPE 1750 & DERIVES 4 MODULES 1750 SERIES & DERIVED
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