mje 1303
Abstract: transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 NE68019-T1 15T09 model RB-30 S PT 100
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: It =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
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ne680ne68qne68800ne68018-t1+10ne68019-t1ne68030-t1ne68033-t1bmje 1303transistor nec d 882 p 6vsg 3852opt5002sc500815t09model rb-30 s pt 100
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702 TRANSISTOR sot-23
Abstract: mje 1303 common emitter bjt transistor kf 508 IC CD 3207 BJT BF 331
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
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ne680ne68800ne68018-t1ne68019-t1+8ne68030-t1ne68033-t1b702 transistor sot-23mje 1303common emitter bjttransistor kf 508ic cd 3207bjt bf 331
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uPA63
Abstract: UPA827TF UPA831TF NE685
Contextual Info: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening
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upa800tupa801tupa802tupa806t+10upa807tupa808tupa809tura810tupa811tupa812tupa63upa827tfupa831tfne685
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transistor IR 324 C
Abstract: transistor selection guide
Contextual Info: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency d B Gain Optimum Figure, G a (d B ) Noise Noise Figure, N F opt at Optimum F re q u e n c y , f (G H z ) Typical Output Power and Gain vs. Frequency
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ne46134ne85634ne46734ne68018-t1+2transistor ir 324 ctransistor selection guide
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