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TTC5886A
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns |
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TTA2097
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Toshiba Electronic Devices & Storage Corporation
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PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns |
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GT30J110SRA
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Toshiba Electronic Devices & Storage Corporation
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IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) |
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2SB1115(0)-T1-AY
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Renesas Electronics Corporation
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Small Signal Bipolar Transistors |
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2SA952-T-A
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Renesas Electronics Corporation
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Bipolar Power Transistors |
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2SD1000(0)-T1-AZ
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Renesas Electronics Corporation
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Small Signal Bipolar Transistors |
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