VGEA Search Results

Contextual Info: TIPP115, T1PP116, TIPF117 PNP SILICON POWER DARLINGTON8 Copyright 1997. Power Innovations Limtled, U K _ M A Y 1899 - B E V I S E 0 M A R C H 1997 20 W Pulsed Power Dissipation LP PACKAGE TOP VIEW 100 V Capability

VRINX

Abstract: LTC2752A LTC2752 LT1469 LTC2752ACLX LTC2752BCLX LTC2752BILX LTC2752C LTC2752I LT1460A1
Contextual Info: LTC2752 Dual16-Bit SoftSpan IOUT DACs Features Description Program or Pin-Strap Six Output Ranges 0V to 5V, 0V to 10V, –2.5V to 7.5V, ±2.5V, ±5V, ±10V n Maximum 16-Bit INL Error: ±1 LSB over Temperature n Guaranteed Monotonic over Temperature n Glitch Impulse 0.6nV•s 3V , 2.2nV•s (5V)

1.2 volt RS-343

Abstract: HDAC97000 330 ohm resistor ALI 3101 C 6ca DIODE
Contextual Info: .SIGNAL PROCESSING 2SE D • SIGNAL PROCESSING TECHNOLOGIES 0 2 ^ 1 7 0G013b7 3 HDAC97000 8-BIT, HIGH SPEED RASTER D/A CONVERTER FEATURES: APPLICATIONS: • 125 M W PS Conversion Rate • PIn-Compatlble with AD9700 with Improved Performance • Color or Monochrome Displays

LTC2752A

Abstract: LTC2752B LT1012A
Contextual Info: LTC2752 Dual16-Bit SoftSpan IOUT DACs FEATURES n n n n n n n n n n n DESCRIPTION Program or Pin-Strap Six Output Ranges 0V to 5V, 0V to 10V, –2.5V to 7.5V, ±2.5V, ±5V, ±10V Maximum 16-Bit INL Error: ±1 LSB over Temperature Guaranteed Monotonic over Temperature

OHD1

Abstract: TDC1018 dac10180 hdac10180a BWQC
Contextual Info: SIGNAL PROCESSING TECHNOLOGIES H D A C 1 0 1 8 0 A / B 8-BIT, HIGH SPEED D/A CONVERTERS FEATURES APPLICATIONS • 275 M W PS Conversion Rate - A Version • 165 M W PS Conversion Rate • B Version • Com patible with TDC1018 w ith Improved Performance • RS-343-A Compatible

1025c1c

Abstract: TDC1025 TZB12-5 100-000-001 TDC1025E1C 1N4148 C1025 68-CONTACT NOF25
Contextual Info: TDC1025 Monolithic A/D Converter 8-Bit, 50Msps Features • 8-Bit Resolution • The TRW TDC1025 is a 50Msps MegaSample Per Second full-parallel (flash) analog-to-digital converter, 50Msps Conversion Rate • Sample-And-Hold Circuit Not Required capable of converting an analog signal w ith full-power

Contextual Info: N ANER PHILIPS/DISCRETE bTE D bb53^31 0036351 354 H A P X Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2508D GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated