BGM1012 |
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NXP Semiconductors
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BGM1012 - MMIC wideband amplifier - @: 1.0 GHz; 1dB Compression point: 5.6 dBm; Gain: 20.1 dB; Is: 14.6 mA; NF: 4.8 dB; Output IP3 (3rd order Intercept Point): 18 dBm; Ptot max: 200 mW; Remarks: General Purpose Wideband Amplifier ; Vs: 3.0 V |
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BGM1012 |
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Philips Semiconductors
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BGM1012,115 |
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NXP Semiconductors
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RF/Microwave Amplifier, 100 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, PLASTIC, SOT-363, 6 PIN |
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BGM1012,115 |
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NXP Semiconductors
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MMIC wideband amplifier - @: 1.0 GHz; 1dB Compression point: 5.6 dBm; Gain: 20.1 dB; Is: 14.6 mA; NF: 4.8 dB; Output IP3 (3rd order Intercept Point): 18 dBm; Ptot max: 200 mW; Remarks: General Purpose Wideband Amplifier ; Vs: 3.0 V; Package: SOT363 (SC-88); Container: Tape reel smd |
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BGM1012T/R |
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NXP Semiconductors
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MMIC wideband amplifier - @: 1.0 GHz; 1dB Compression point: 5.6 dBm; Gain: 20.1 dB; Is: 14.6 mA; NF: 4.8 dB; Output IP3 (3rd order Intercept Point): 18 dBm; Ptot max: 200 mW; Remarks: General Purpose Wideband Amplifier ; Vs: 3.0 V |
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