BFR360 Search Results

clapp oscillator

Abstract: bjt oscillator application note BJT phase shift oscillator AN061 AN-061 BBY58 BBY58-02V BFR360F bjt oscillator Varactor Diode RF
Contextual Info: Application Note No. 061 Silicon Discretes W-CDMA 2.3 GHz VCO using BFR360F and BBY58-02V Features • Low phase noise of < -90 dBc / Hz at 10 kHz using a low Q resonator. • 0 dBm output power at low current consumption. 2 3 1 • Highly linear oscillation frequency

BFR360L3

Contextual Info: BFR360L3 NPN Silicon RF Transistor Preliminary data
Low voltage/ Low current operation 3
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!

marking code CB SMD tr2

Abstract: TRANSISTOR SMD MARKING CODE ce marking code CB SMD ic MARKING CODE SMD IC BFR360L3 BFR460L3 BFS360L6 BFS466L6 SMD 6PIN IC MARKING CODE SMD MARKING CODE 102c
Contextual Info: BFS466L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR360L3

BFR360F

Abstract: AN077
Contextual Info: BFR360F NPN Silicon RF Transistor • Low noise amplifier for low current applications • Collector design supports 5V supply voltage 2 3 1 • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package • Qualified according AEC Q101

BFR360T

Abstract: BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325
Contextual Info: BFR360T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

IC 7437

Abstract: BFR360F
Contextual Info: BFR360F NPN Silicon RFTransistor Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFS360L6 NPN Silicon RF Transistor* • Low voltage/ Low current operation 4 • For low noise amplifiers 3 5 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 6 1 • Low noise figure: 1.0 dB at 1.8 GHz • Built in 2 transitors TR1, TR2: die as BFR360L3

BFR360L3

Contextual Info: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR360F NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation 2 3
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 1
Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

fbs MARKING TRANSISTOR

Contextual Info: BFR360T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR360F NPN Silicon RF Transistor* • Low voltage/ low current operation 2 3 • For low noise amplifiers 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

BFR360L3

Abstract: BFR380L3 BFS386L6 tr1150
Contextual Info: BFS386L6 NPN Silicon RF Transistor 4 Preliminary data
Low voltage/ low current operation 3 5
For low noise amplifiers 2 6
For oscillators up to 3.5 GHz and Pout > 10 dBm 1
Low noise figure: TR1: 1.0dB at 1.8 GHz TR2: 1.1 dB at 1.8 GHz
Built in 2 Transistors TR1: die as BFR360L3,

s parameters 4ghz

Contextual Info: BFR360F NPN Silicon RFTransistor Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!

marking FB

Contextual Info: BFR360T NPN Silicon RF Transistor* • Low voltage/ low current operation • For low noise amplifiers 2 3 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR360T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR360L3

Abstract: BFR193L3
Contextual Info: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers 3 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 2 • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

transitor RF 98

Abstract: BFR360F E6327 GMA marking
Contextual Info: BFR360F NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation 2 3
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 1
Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR360T

Abstract: SC75
Contextual Info: BFR360T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR360T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR360L3 NPN Silicon RF Transistor Preliminary data
Low voltage/ Low current operation 3
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR360F NPN Silicon RFTransistor Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR360F

Abstract: 104GHz transitor RF 98
Contextual Info: BFR360F NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation 2 3
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 1
Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!