BFQ TRANSISTORS Search Results

philips bfq

Abstract: FQ236A 236A
Contextual Info: Philips Semiconductors Product specification NPN video transistors BFQ236; BFQ236A FEATURES DESCRIPTION • High breakdow n voltages NPN vid e o tra n sisto r in a SO T223 plastic package. PNP com plem ents: BFQ 256 and BFQ 256A. • Low output capacitance

BFQ transistors

Abstract: BFQ transistors 98 BFQ 58 BFQ57 BFQ196 bfq58 b20200 bfq59 siemens 350 98 5925B
Contextual Info: T-3 I"Oí SIE M EN S A K T I E N G E S E L L S C H A F 47E D • ñ 2 3 S bQ S G Ü 5 b 57 ô 2 « S I E G HF-Bipolar-Transistoren / RF Bipolar Transistors Metal Ceramic Package NPN ID (II B B □ B □ 'c P,o. h V mA mW GHz dB BFQ 57 BFQ 58 16 16 35 30

BFQ31

Abstract: MI350 BFQ31AR "UHF Transistors" bfq31r BFQ31A
Contextual Info: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTORS ISSU E 3 - JANUARY 1996 P A R T M A R K IN G D E T A IL S BFQ31 B F Q 3 1A - S2 - S4 B FQ 31A R - S5 BFQ 31R - S3 ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L Collector-Base Voltage Collector-Emitter Voltage

BFP29

Abstract: BFP35A BFQ77 BFP17 BFQ57 BFQ58 BFT65 BFQ 58 SOT-89 smd marking CF BFT99A
Contextual Info: SIEMENS AKTIENGESELLSCHAF 03E I Bi ê23SbO S QDlSb7M T M S IE G • : Silicon Bipolar Transistors M etal C eram ic Packages Max. r atings ^CEO Ic Pto. V mA mW Chara steristic:s at Ta = 25° C F fj f Ic VcE GHz dB mA V GHz N N N 16 16 20 35 30 35 450 450 700

philips bfq

Abstract: Video to VGA "Video Amplifiers" BFQ transistors Video Amplifiers AN95046 BFQ235A CR6927 BFV420 diode 226
Contextual Info: Philips Semiconductors Video Transistors and Modules for Monitors Application notes The following application notes are available: 1. “Video Amplifiers for VGA/XGA Monitors, with BFQ235A”; reference number ETV93001; release date 08 February 1993. 2. “OSD Update Video Amplifiers for VGA/XGA Monitors, with BFQ235A”;

philips bfq

Abstract: bfq256 BFQ236 BFQ236A BFQ256A d0251
Contextual Info: Philips Semiconductors bbS3131 GD5S112 HAPX P ro d u c t s p e c ific a tio n N AMER P H I L I P S / D I S C R E T E b7E PNP 1 GHz video transistors FEATURES BFQ256; BFQ256A P IN N IN G • High breakdown voltages • Low output capacitance 1 PIN D E S C R IP T IO N

fr91a

Abstract: philips bfq FQ235a t122 25 3 FQ262a fr90a 122e BFR134 t122 25 10 t122 25 72
Contextual Info: 22 Small Signal Leaded Devices Wideband Transistors cont. h FE R a tin g s Type P ackage v CEO V S O T -103 S O T -103 S O T -103 S O T -103 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 TO -72 S O T -173 S O T -122 S O T-37 TO -72 TO -72

Q2T2905

Abstract: SN3351 3N208 q2t2222 TIS25 2N3808 2N3680 2N3809 2N381 T05 n3806
Contextual Info: Multi Transistors Dual Bipolar M ATCHIN G SELECT!roR HFE 20% HFE VBE VBE 5 mV RATINGS 10% 3 mV U N M ATCH ED 2N2641 2N2644 2N2913 2N2914 2N2223* 2N2640* 2N2643* 2N2917 2N2918 2N2972 2N2973 2N2976 2N2977 2N3349* 2N3352* 2N3806 2N3807 2N4854 2N4855 2N3348*

Video Amplifiers

Abstract: BFV420 AN95046 CR6927 BFQ transistors
Contextual Info: Philips Semiconductors Video Transistors and Modules for Monitors Application notes The following application notes are available: 1. “Video Amplifiers for V G A /XG A Monitors, with BFQ235A”; reference number ETV93001; release date 08 February 1993. 2.

T343

Contextual Info: Concise Catalogue 1996 Philips Semiconductors RF & MICROWAVE SEMICONDUCTORS & MODULES DISCRETE SEMICONDUCTORS Wideband transistors THIR D-G ENER ATIO N NPN W IDEBAND TRANSISTO RS fT up to 8 GHz f-p/lg curve s ee chart package ceram ic SOT172 SOT143 SOT173

bcw 918

Abstract: SO3572R transistor NB B4 marking BSR16R BCW General Purpose Transistor 2907A BF BFr pnp transistor 2907A ses 554 Switching transistor 50115
Contextual Info: micropackaged devices microboitiers ^ général purpose and switching transistor selector guide guide de sélection-transistors de commutation et usage général THOMSON-CSF Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221

BFQ43

Abstract: BFQ43S lyp 809 BLW31 TRANSISTOR A1t
Contextual Info: b^E » N AMER PHILIPS/DISCRETE • ^53^31 0DHÔ714 ODD ‘' BFQ43 BFQ43S V.H.F. POWER TRANSISTORS N-P-N silicon planar e pitaxial transistors intended fo r use in class-A, B o r C operated m ob ile tran sm itte rs w ith a nom inal supply voltage o f 13,5 V . T he transistors are resistance stabilized and guaranteed to w ith ­

Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • 2SB1308 PNP Plastic-Encapsulate Transistors Power dissipation: PCM = 0.5W Tamb=25℃ Collector current: ICM = -3A Collector-base voltage: V(BR)CBO = -30V

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1308 TRANSISTOR PNP 1. BASE FEATURES z Power Transistor z Excellent DC current Gain z Low Collector-emitter Saturation Voltage 2. COLLECTOR 3. EMITTER

MCC BFR

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • 2SB1308 PNP Plastic-Encapsulate Transistors Power dissipation: PCM = 0.5W Tamb=25℃

2SB1308

Contextual Info: Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V BR CBO: SOT-89 TRANSISTOR (PNP) 1. BASE 0.5 W (Tamb=25℃) -3 2. COLLECTOR1 A -30 3. EMITTER 2

2SB1308

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V BR CBO: SOT-89 TRANSISTOR (PNP) 1. BASE 0.5 W (Tamb=25℃) -3 2. COLLECTOR1 A

2SB1308Q

Abstract: 2sb1308r MCC BFR
Contextual Info: MCC TM Micro Commercial Components Features x • • • • 2SB1308-P 2SB1308-Q 2SB1308-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PNP Plastic-Encapsulate Transistors Case Material: Molded Plastic. UL Flammability

2sb1308p

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x • • • • 2SB1308 2SB1308-P 2SB1308-Q 2SB1308-R PNP Plastic-Encapsulate Transistors Case Material: Molded Plastic. UL Flammability

Contextual Info: MCC TM Micro Commercial Components Features x • • • • 2SB1308-P 2SB1308-Q 2SB1308-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PNP Plastic-Encapsulate Transistors Case Material: Molded Plastic. UL Flammability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors 2SB1308 TRANSISTOR（PNP ） FEATURES Power dissipation PCM : 0.5 Collector current ICM : -3 Collector-base voltage V BR CBO : -30 ＳＯＴ－８９ １．ＢＡＳＥ

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1308 TRANSISTOR PNP 1. BASE FEATURES z Power Transistor z Excellent DC current Gain z Low Collector-emitter Saturation Voltage 2. COLLECTOR 3. EMITTER

s08b

Contextual Info: Temic S e m i c o n d u c t o r s Tape and Reel Standards Taping of SMT Devices T E M IC 's Transistors in SM D packages are available in an antistatic 8 m m blister tape in accordance w ith DIN IEC 2 6 8 -3 lo r autom atic com ponent insertion. The blister tape is a plastic strip w ith im pressed com ponent