BF391 T Search Results

BF393

Abstract: ferranti BF391 BF392
Contextual Info: BF391 BF392 BF393 Inr IIsemiconductors FERRANTI L NPN Silicon Planar High Voltage Transistors DESCRIPTION These plastic encapsulated general purpose transistors are designed for applications requiring high breakdown voltage and low capacitance. The E-line package is formed by injection moulding a SILICONE

BF393

Abstract: BF391 BF392 ferranti
Contextual Info: BF391 BF392 BF393 Inr IIsemiconductors FERRANTI L N P N S ilico n Planar High V o lta g e T ransisto rs DESCRIPTION These plastic encapsulated general purpose transistors are designed for applications requiring high breakdown voltage and low capacitance. The E-line package is formed by injection moulding a SILICONE

Contextual Info: BF 391 • BF 392 ■ BF 393 NPN HIGH VOLTAGE VIDEO AMPLIFIERS CASE TO-92A THE BP391, BF392, BF393 ARE NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO AMPLIFIERS IN TELEVISION RECEIVERS. THEY FEATURE 200V MINIMUM COLLECTOR-EMITTER BREAKDOWN VOLTAGE AND

BF197P

Abstract: BF493 ztx342 cd BF196P ZTX327 FERRANTI ELECTRONICS BF393 MPSA42 MPSA92 ZTX320
Contextual Info: TABLE 10 : NPNiPNP HIGH FREQUENCY The devices shown in this table are designed for high frequency operation is such application areas as amplification, switching and oscillation. The transistors marked with f are particularly suitable for use in RF and Video IF stages of television re­

ZTX458

Abstract: ZTX558 ZTX758 BF493 ZTX4555 BF392 BF393 MPSA92 ZTX658 ZTX757
Contextual Info: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps and other applications requiring high voltage capability. Type Max V CE sat at hFE at V cbo V CEO V V mA V mA NPN

MPSA42 equivalent

Abstract: MPSA43 equivalent MPSA92 equivalent ZTX320 equivalent ZTX542 equivalent ztx342 cd BZX88C BF493 ZTX541 equivalent ZTX327
Contextual Info: TABLE 10 : NPNiPNP HIGH FREQUENCY The devices shown in this table are designed for high frequency operation is such application areas as amplification, switching and oscillation. The transistors marked with f are particularly suitable for use in RF and Video IF stages of television re­

BC327 BC337 noise figure

Abstract: bc550 bc560 MPSA18 BC550 BC337-25 CBE BC327 noise figure BC337 CBE BC327 CBE BC338/BC328 BC414C BC337 noise
Contextual Info: LO W N O IS E A N D GOOD H F E L IN E A R IT Y These devices are designed to use on applications where good H F E linearity and low noise characteristics are required: Instrumentation, Hi-Fi Preamplifier. NPN BC239 BC239A BC239B BC239C BC413 BC413B BC413C

MPS2307

Abstract: differential amplifier 2n5551 2N6520 MOTOROLA BF845 BF844 BF493 MPS A92 transistor 2N6515 2N6516 2N6517
Contextual Info: SMALL-SIGNAL TRANSISTORS — PLASTIC continued High Voltage Amplifier Transistors (TO-92 • EBC)* These high-voltage transistors are designed for driving neon bulbs and Nixie@ indicator tubes, for direct line operation, and for other applications requiring high-voltage capability at relatively low collector current. These devices are listed in

BF117

Abstract: BF294 BF178 BF299 BC236 BF174 BF298 BC312 BF120 BF137
Contextual Info: High Voltage Transistors TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd VCEO IC ICM* VCER* min mai mW (mA) (V) VCE(sat) IC (mA) VCE max (V) (V) IC (mA) fT min (MHz) Cob Cre* max (MHz) BC236 BC285 BC312 BC393 BC394 N N N P N TO-106 TO-18 TO-39 TO-18 TO-18

BF297

Abstract: bf391 t BF179 bf305
Contextual Info: High Voltage Transistors H Fe M A X IM U M R A T IN G S TY PE NO. BC285 BC312 BC393 BC394 BC450 BC530 BC531 BC532 BC533 BCW50 PO LA ­ CASE VcEO m W IcM* (m A ) VcER* (V ) 360 800 400 400 350 100 150 100 100 200 120 100 180 180 100 30 50 50 30 50 TO-92A

BC236

Abstract: BF305 BCW50 BC285 BF137 BF298 BF299 BC312 BCW5 BCX30
Contextual Info: NO. v 'c Cob V CE SAT Tl X M A X IM U M R A T IN G S CEO Pd (mW) 'c m • Im A I (V ) min max BC236 BC285 BC312 BC393 BC394 N N N P N TO-106 T O -18 TO-39 T O -18 TO-18 300 360 800 400 400 50 100 150 100 100 120 120 100 180 180 25 30 50 50 30 200 BC450 BC530

BF195

Abstract: BF494 BF494 bf199 BF237 BF238 BF496 BF196 BF254-3 BF254-4 C0639
Contextual Info: TP-92 Plastic Package Transistors NPN - - -Max mum latings Type No. ^ce (V) Min BF195 ^CE (V) Min 30 BF196 2C 40 BF197 BF198 5 3C 40 4 25 40 Electrical Characteristics {Ta=25”C, Unless Otherwise Sneciflnrn

po102

Abstract: 1401CA1 DIAC ecg6407 ECG6407 ic 565 1401CA3 AL307BM 78l05 sot-23 DZS535-15 AL307
Contextual Info: RF & MICROWAVE TRANSISTORS Type P - p- n-p N - n-p-n MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 2SC4270 2SC4365 2SC3838K BFS17,BFS17A 2SC3841 BFR92A BFR93 2SC4569 BFR93P 2SC3774 BFR92P 2SC3775 BFR93A BFR92 2SC4568 2SC4857

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage

MMBF4856

Abstract: transistor equivalent 2n5551 BF245 application note MSC2404 MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MDC3105LT1 Motorola Preferred Device Integrated Relay/Solenoid Driver • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to

MMBF4856

Abstract: BC237 bf244 BC177 pnp transistor BF245 motorola MMBT8599L
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Switching Transistor MPQ3906 PNP Silicon Motorola Preferred Device 14 13 12 11 10 9 8 5 6 7 PNP 1 2 3 4 MAXIMUM RATINGS 14 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage

MAD130P

Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

BC517 spice model

Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
Contextual Info: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information