BF245C TRANSISTOR Search Results

bf245c

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 1996 Jul 30 NXP Semiconductors Product specification BF245A; BF245B; BF245C N-channel silicon field-effect transistors

BF245C

Abstract: BF245B BF245A bf245c equivalent BF245C NATIONAL
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 1996 Jul 30 NXP Semiconductors Product specification BF245A; BF245B; BF245C N-channel silicon field-effect transistors

bf245c

Abstract: BF245A bf245b BF245B Philips Field-Effect Transistors BH553
Contextual Info: Philips Semiconductors Product specification N'Channel silicon field-effect transistors FEATURES BF245A; BF245B; BF245C PINNING • Interchangeability of drain and source connections • Frequencies up to 700 MHz. APPLICATIONS PIN SYMBOL 1 d drain 2 s source

BF245C

Abstract: bf245b BF245A BF-215 application notes BF245A BF245B PHILIPS mqe7 MBH555
Contextual Info: Philips Semiconductors Product specification N-channel silicon field-effect transistors FEATURES BF245A; BF245B; BF245C PINNING • Interchangeability of drain and source connections PIN SYMBOL • Frequencies up to 700 MHz. 1 2 d drain s source APPLICATIONS

bf245b

Abstract: bf245c equivalent BF245A BF245C MBH553
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors

BF245c spice model

Abstract: BF245C bf245b spice model bf245b BF245B spice BF245A spice BF245c spice bf245a bf245c cross reference sc07 catalog
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors

Contextual Info: £Pioducti, me. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 BF245A; BF245B: BF245C U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 N-channel silicon field-effect transistors FEATURES FAX: (973) 375.3960 PINNING • Interchangeabillty of drain and source connections

BF245

Abstract: bf245b BF245C bf245c equivalent BF245A BF245B PHILIPS application notes BF245A MGE786
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors

BF245

Abstract: BF 245 2SC 1885 transistor BF 509 Q62702-F236 bf245b bf245a transistor BF245 A BF 245 C Q62702-F205
Contextual Info: 2SC D • A23SbOS Q0Q44S7 2 « S I E G T-St-Z^ . N-Channel Junction Field-Effect Transistors BF 245 A BF 245 B o - BF245C SIEMENS AKTIEN6ESELLSCHAF 57 BF 24 5 A, B, and C are N-channel junction field-effect transistors in plastic package similar

bf245 equivalent

Abstract: bf245 BF245 application note BF244A MOTOROLA BF245 motorola BF244A equivalent bf245c equivalent BF245c MOTOROLA bf244a bf245b equivalent
Contextual Info: MOTOROLA Order this document by BF244A/D SEMICONDUCTOR TECHNICAL DATA BF244A BF244B BF245 BF245A BF245B BF245C JFET VHF/UHF Amplifiers N–Channel — Depletion 3 DRAIN 2 GATE STYLE 22 1 SOURCE 3 DRAIN 1 GATE 1 2 STYLE 23 2 SOURCE MAXIMUM RATINGS Rating Symbol

HVR 2-12

Contextual Info: [£ii£u <=5£>ni-L.onaucto'i Lr'iodi JLCtl, j ^V£o^ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Una. BF 245 A BF 245 B BF246C IM-Channel Junction Field-Effect Transistors TELEPHONE: 973 376-2922 (212) 227-6005 (973) 376-8960 AX BF 245 A, B, and C are N-channel junction field-effect transistors in plastic package similar

7.1 Channel audio amplifier

Abstract: amplifier audio BFT46 BF861A n channel audio BFW12 BF410C BF512 transistors BFW10
Contextual Info: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs JUNCTION FETS FOR AMPLIFIERS OVERVIEW_PRODUCT DATA: PAGES 36-37 N/P _ leaded_

BF991

Abstract: BF545 BFT46 PMBFJ310 PMBFJ177 PMBFJ211 BF908R BF98 PMBFJ111 PMBFJ174
Contextual Info: Philips Semiconductors Small-signal Field-effect Transistors Index Types added to the range since the last issue of Handbook SC07 1996 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE 2N5484 80 BF909R 165 J174 288 2N5485

F245A

Abstract: BF244 BF245 BF245C JFET BF245B BF245 motorola
Contextual Info: BF244A,B CASE 29-04, STYLE 22 TO-92 TO-226AA BF245,A,B,C CASE 29-04, STYLE 23 TO-92 (TO-226AA) M A X IM U M R A TIN G S Rating Sym bol Value U nit D rain-S ource Voltage VDS ±30 Vdc Dram -G ate Voltage vdg 30 Vdc G ate-Source Voltage vgs 30 Vdc id 100 m Adc

2n5248

Abstract: BF245C BF247A 2N5485 2n5556 2N5668 BF244A 2N5103 BC264A BC264B
Contextual Info: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Yfs VGS oir Ciss Crss NF (V) max (PF> max (PF) max (dB) max 2 2 2 2 Pd (mW) BVGSS (V) min m ai (mmhos) min m i min (mA) BC264A BC264B BC264C BC264D BF246A TO-92DE

2n3819

Abstract: bf245b
Contextual Info: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. CASE MAXIMUM RATINGS BV css P4 mW (V) loss (mA) min max Y* (nimbos) min max Vcsf««) (V) min max Cte (pF) max (pF) max Cr„ NF (dB) max 8 8 8 8 14.5 4+ 4+ 4+ 4+ 11+ 1.2+ 1.2+ 1.2+ 1.2+

BF247A

Abstract: bs250 bs170 PMBFJ111 PMBFJ174 BSR56 BFT46 PHC21025 BF909WR
Contextual Info: Philips Semiconductors Small-signal Field-effect Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC07 1994 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE 150 BS170 347 150

TO-92DD

Abstract: BC264B BC264A BC264C BC264D BF246A BF246B BF246C BF247A BF247B
Contextual Info: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Yfs VGS ofF Ciss Crss NF (V) max (piO max (PF) max (dB) max 8 8 8 8 14.5 4+ 4+ 4+ 4+ 11 + 1.2+ 1.2+ 1.2+ 1.2+ 3.5+ 2 2 2 2 Pd (mW) BVGSS (V) min max (mmhos) min

BF245

Abstract: BF244 BF244 JFET JFET BF245 BF244A BF245 motorola BF245C transistors bf245 BF244A MOTOROLA BF245C JFET
Contextual Info: BF244A,B ¿T CASE 29-04, STYLE 22 ¿ i t H / TO-92 TO-226AA .sou, BF245,A,B,C CASE 29-04, STYLE 23 TO-92 (TO-226AA) M A X IM U M RATINGS R a tin g S ym bol V a lu e U n it D ra in -S o u rc e V o lta g e VdS ±30 Vdc D ra m -G a te V o lta g e VdG 30 V dc

Contextual Info: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Pd mW BVGSS (V) min (mA) Yfs mai (mmhos) min m i VGS(oir) Ciss Crss NF (V) max (PF> max (PF) max (dB) max 2 2 2 2 min BC264A BC264B BC264C BC264D BF246A TO-92DE

BF245

Abstract: BF245C BF245C JFET
Contextual Info: BF244A,B ¿¡T CASE 29-04, STYLE 22 TO-92 TO-226AA 1Souf BF245,A,B,C CASE 29-04, STYLE 23 TO-92 (TO-226AA) G al« \ J 1 / M A X IM U M RATINGS R a tin g V a lu e Sym bol U n it D ra in -S o u rc e V o lta g e Vd S D ra in -G a te V o lta g e vdg 30 G a te -S o u rc e V o lta g e

2N5248

Abstract: BC264C 2N5557 2N5103 2N5485 2n5556 BF244A BF245C 2N5104 BC264A
Contextual Info: N -Channel Junction Field Effect Transistors GENERAL PURPOSE M A X IM U M R A T IN G S ' dss Im A l TYPE VG S off (V Y fs (mm hos) Ciss Crss NF (pF) (pF) (dB) max max max CASE NO. Pd (mW) b v gss (V) m in BC264A BC264E! BC264C BC264D TO-92DE TO-92DE TO-92DE

BF245

Abstract: BF244 BF244 JFET JFET BF245 transistor BF245 A BF245 motorola BF244A MOTOROLA transistor bf244 BF245C JFET transistors bf245
Contextual Info: BF244A,B ¿T CASE 29-04, STYLE 22 ¿ i t H / TO-92 TO-226AA .sou, BF245,A,B,C CASE 29-04, STYLE 23 TO-92 (TO-226AA) M A X IM U M RATINGS R a tin g S ym bol V a lu e U n it D ra in -S o u rc e V o lta g e VdS ±30 Vdc D ra m -G a te V o lta g e VdG 30 V dc

FET BFW11

Abstract: FET BFW10 OF FET BFW11 BFW10 FET OF FET BFW10 BFW12 BF245A sot23 BFW10 n-channel fet BF245A j310 FET
Contextual Info: 48 RF/Microwave Devices Small-Signal Field-Effect Transistors Junction FET's These are fo r applications in the VHF range. Principal features of these products are their low noise, high transfer conductance and their high input impedance, the latter, in particular, m inim izing signal losses and helping to sim plify