BDV 64 Search Results

bdx 330

Abstract: DARLINGTON ESM 749 box53a 800V PNP DARLINGTON ESM 30 bov66 BUX37 bu bdx 64 BUX 837 BUV74
Contextual Info: general purpose darlington selector guide Pp60 — 150 W q guide de sélection darlingtons usage général ^ \ v CEO 45V 80V 100V 120V BDX67 BOX 66 BDX 67 A BDX 66 A BDX 67 B BDX 66 B BDX 67 C BDX 66 C TO-3 BDV67 BDV66 BDV 67 A BDV 66 A BDV 67 B BDV 66 B BDV 67 C

BU 450 bdx

Abstract: bdx 330 BUX 837 BUX37 BDV65 ESM855 BUV74 bdx 66 bdx 67 BDX65 BUV54
Contextual Info: general purpose darlington selector guide Pp60 — 150 W q guide de sélection darlingtons usage général ^ \ v • CEO 45V 60V ihomsoncsf 80V 100V 120V BDX67 BOX 66 BDX 67 A BDX 66 A BDX 67 B BDX 66 B BDX 67 C BDX 66 C TO-3 BDV67 BDV66 BDV 67 A BDV 66 A

pnp 400v 10a

Abstract: box53a 800V PNP bdv 648 DARLINGTON ESM 30 BUV54 vceo 800V PNP BDX53 BDV66 bdx 66 bdx 67
Contextual Info: general purpose darlington selector guide Pp60 — 150 W q guide de sélection darlingtons usage général ^ \ v C EO • 45V 60V ih o m s o n c s f 80V 100V 120V BDX67 BOX 66 BDX 67 A BDX 66 A BDX 67 B BDX 66 B BDX 67 C BDX 66 C TO-3 BDV67 BDV66 BDV 67 A

THOMSON-CSF plastic power transistors

Abstract: bu bdx 64 bdx 330 BUV37 BDV65 BDV64 CB285 BDV67 BDX33 BDX53
Contextual Info: 1y plastic power transistors transistors de puissance plastiques THOMSON-CSF Type •c v CEO VCEX* cont <V A) Ptot PNP NPN (W) H21E / ■c *VC E = 1 £ V max min (A) V C E(sat)/ >C ! >B max (V) (A) (A) td + tr •max typ fcl») general purpose darlingtons

TRANSISTOR BDX

Abstract: TRANSISTOR BDX 285 pnp transistor 1000v TRANSISTOR BDX 53 transistor BDX 65 transistor BDX 80 bux diode darlington NPN 1000V isotop DARLINGTON ESM 749 transistor BU 184
Contextual Info: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BUW 4ff 30 A BUW 49 20 A BUX 69 IS A J/T

transistor BU 184

Abstract: TRANSISTOR BDX pnp transistor 800v darlington NPN 600V 8a transistor transistor BDX 80 NPN Transistor 600V TO-220 pnp transistor 1000v transistor BU 109 transistor ESM NPN Transistor VCEO 1000V
Contextual Info: SUPERSWITCH high power transistor MU 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV

zr 78 L 03 video images

Contextual Info: LSI LOGIC L64750/51 CCITT Variable Length Coder/Decoder Description The L64750 and L64751 perform the run-length and variable length coding and decoding func­ tions of the CCITT Consultative Committee on International Telephones and Telegraphs , H.261 video compression standard, respectively.

Contextual Info: W Ît S 3 LSI LOGIC 159! L64750/51 CCITT Variable Length Coder/Decoder Description The L64750 and L64751 perform the run length and variable length coding and decoding func­ tions of the CCITT Consultative Committee for International Telephones and Telegraphs

bdx340

Abstract: bdw 34 a mj 1001 6282 TIP-142 2N6284 BDV65 BDW93
Contextual Info: r 7z#j ^ SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL RÆoæ moi(gra(M[](gs POWER BIPOLAR EPITAXIAL BASE HIGH GAIN DARLINGTONS (Continued •c v CBO v CEO ptot Package Ty pe N PN h FE <C 1 VCE v C Esat lc ' 'B PNP m in (A) (V) (V) (W) 8 8 8 8 8 8 8 8 8 8 8

845 bios chip

Abstract: bdv 83 d L-803
Contextual Info: s 3 LSI LOGIC m L64750/51 C C m Variable Length Coder/Decoder Description The L64750 and L64751 pe rfo rm th e run length and va ria b le le ng th coding and de cod ing fu n c ­ tio n s of the CCITT C o nsu ltative C om m ittee fo r In te rn a tio n a l T elephones and Telegraphs

Contextual Info: Tantalum Capabilities PRODUCTS F-Tech & Simulated Breakdown Screening SBDS Why Choose KEMET KEMET Corporation is a leading global supplier of electronic components. We offer our customers the broadest selection of capacitor technologies in the industry across all dielectrics, along

bdx340

Abstract: Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO p»ot (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60

bdv 83 d

Contextual Info: LSI LOGIC L64750/51 CCITT Variable Length Coder/Decoder D escription The L64750 and L64751 p erfo rm th e ru n -le n g th and v a ria b le le n g th co din g and d e co d in g fu n c ­ tio n s o f th e CCITT C on su lta tive C om m ittee on In te rn a tio n a l Te lep h o ne s and Telegraphs , H.261

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

BDP 281

Contextual Info: Surface Mount Transient Voltage Suppressors 1500 W Part Number "Gull Wing" "Mod.J-Bend" Device Marking Code Reverse Stand-Off Voltage Breakdown Voltage @ Test Curr. Min. Max. Maximum Clamping Vltg. @ IPPM Operating Junction and Storage Temperature: -55 oC to 150 oC

BFU 450

Abstract: BV EI 481 1300 J33CA BV EI 305 2800 5SMCJ28A 1.5SMCJ100CA 5SMCJ33A BHN 43 CY10 1.5SMCJ30CA
Contextual Info: 1.5SMCJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR V O LTA G E -5 .0 -1 7 0 Volts Peak Pulse Power-1500 W atts FEATU RES • For surface m ounted applications in order to optim ize board space • Low profile package • Built-in strain relief • Glass passivated ju n ctio n

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

GFM 78

Abstract: GFz 51 smcj bfk GFK 77 GGV 85 BEM 45 GFM 45 5SMCJ51 SMCJ bem gex 96 a
Contextual Info: IMICONDUCTOR t m - SMCJ170 C A SMCJ5.0(C)A - SMCJ170(C)A Features • Glass passivated junction. • 1500 W Peak Pulse Power capability on 10/1000 us waveform . • Excellent clam ping capability. • Low increm ental surge resistance. • Fast response tim e; typically less

Diode GFK

Abstract: marking code BEV SMCJ20CA SMCJ33CA GDE 85 GFK 77 SMCJ54CA smcj30a SMCJ12A SMCJ5.0A
Contextual Info: SMCJ5.0A thru SMCJ170CA SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE 5.0 TO 170 VOLTS 1500 Watt Peak Pulse Power SMC/DO-214AB .108 2.75 .128(3.25) .220(5.59) .245(6.22) .260(6.60) .280(7.11) .006(.152) .012(.305) .079(2.00) .103(2.62) .002(.051)

SMCJ85CA

Contextual Info: SMCJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE - 5.0 TO 440 Volts 1500 Watt Peak Pulse Power SMCJ PART NUMBER UNI- POLAR BI-POLAR REVERS DEVICE REVERS BREAKDOW BREAKDOW MAXIMUN PEAK E TEST MARKING E STANDN VOLTAGE N VOLTAGE CLAMPING PULSE LEAKAGE

GFM 78

Abstract: BDP 281 gfk 112 737 gez on 737 gez
Contextual Info: SMCJ5.0 C A - SMCJ170(C)A 0.280 (7.112) 0.260 (6.604) Features • • • • • • 0.124 (3.150) 0.108 (2.743) Glass passivated junction. 1500 W Peak Pulse Power capability on 10/1000 ms waveform. Excellent clamping capability. Low incremental surge resistance.

737 gez on

Abstract: BFK 78 GFM 78 BDP 281 SMCJ30CA 2430 GET IC GFK GFP SMCJ33CA GFM 65 GFM 45
Contextual Info: IM IC O N D U C TQ R tm - SMCJ170 C A SMCJ5.0(C)A - SMCJ 170(C)A Features • Glass passivated junction. • 1500 W Peak Pulse Power capability on 10/1000 |^s waveform . • Excellent clam ping capability. • Low increm ental surge resistance. • Fast response tim e; typically less