BD826 TRANSISTOR Search Results

transistor bd826

Abstract: bd828 BD826-10 BD828-10 BD826 MD 202 BD829 BD830-16 BD830 BD830-10
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BD826; BD828; BD830 PNP power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 23 Philips Semiconductors Product specification PNP power transistors

transistor bd826

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D067 BD826; BD830 PNP power transistors Product specification Supersedes data of 1997 Jun 23 File under Discrete Semiconductors, SC04 1998 May 29 Philips Semiconductors Product specification PNP power transistors

bd827

Abstract: BD829 BD825 BD826 transistor bd826 BD828 BD830 IEC134
Contextual Info: BD825 BD827 BD829 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose N-P-N transistors, in T0-202 plastic envelopes, recommended for driver-stages in hi-fi amplifiers and television circuits. P-N-P complements are BD826, BD828 and BD830. Matched pairs can be supplied.

BD828

Abstract: BD828-10 BD826 transistor bd826 BD826-10 BD826-16 BD830-16 bd826 transistor
Contextual Info: Philips Semiconductors Product specification PNP power transistors BD826; BD828; BD830 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part of mounting surface 3 base APPLICATIONS • General purpose

Contextual Info: BD825 BD827 BD829 _ J V. SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose N-P-N transistors, in TO-202 plastic envelopes, recommended fo r driver-stages in hi-fi amplifiers and television circuits. P-N-P complements are BD826, BD828 and BD830. Matched pairs can be supplied.

BD826

Abstract: BD828 BD827 BD830 80826 B0828 BD829 BD825 IEC134
Contextual Info: BD826 BD828 BD830 J V. SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose P-N-P transistors, in T0-202 plastic envelopes, recommended for driver stages in hi-fi amplifiers and television circuits. N-P-N complements are BD825, BD827 and BD829. Matched pairs can be supplied.

Contextual Info: BD826 BD828 BD830 JV _ SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose P-N-P transistors, in TO-202 plastic envelopes, recommended for driver stages in hi-fi amplifiers and television circuits. N-P-N complements are BD825, BD827 and BD829. Matched pairs can be supplied.

b0825

Abstract: bd825 BD827 BD829 B0828 BD826 BD828 BD830 IEC134
Contextual Info: BD825 BD827 BD829 y V s . SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose N-P-N transistors, in T0-202 plastic envelopes, recommended fo r driver-stages in hi-fi amplifiers and television circuits. P-N-P complements are BD826, BD828 and BD830. Matched pairs can be supplied.

BF762

Abstract: TO-202 BF760
Contextual Info: TO-202 Plastic Package Transistors PNP Electrical C haracteristics (Ta=25°C, U n le ss O therw ise Specified) Maxim um Ratings Type No. ^ CBO ^ CEO ' ' ebo (V) Min (V) Min IV) Min BD814 45 45 5 BD816 60 60 BD81B 100 BD826 45 *CBO PD (W) Ta=25 "C (A) (PA)

BD829

Abstract: bd827
Contextual Info: BD825 BD827 BD829 y v . SILICON PLANAR EPITA XIA L PO W ER TR A N SISTO R S General purpose N-P-N transistors, in T0-202 plastic packages, recommended fo r driver-stages in hi-fi amplifiers and television circuits. P-N-P complements are BD826, BD828 and BD830. Matched pairs can be supplied.

transistor bd826

Abstract: bd830 BD 829 BD825 BD828
Contextual Info: BD826 BD828 BD830 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose P-N-P transistors, in T 0 -2 0 2 plastic packages, recom m ended fo r d rive r stages in h i-fi am p lifie rs and television circuits. N-P-N com plem ents are BD825, BD827 and BD 829. M atched pairs can be supplied.

b0816

Abstract: BD816 BD814 BD818 BD826 BD828 BD842 BD844 CSA743 CSA743A
Contextual Info: TO-202 PLASTIC PACKAGE TRANSISTORS PNP M a x im u m R a tin g s Typ» No. VCB0 (V) V ECO V EBO (V) (V) (MA) Min Min Min Max BD818 100 60 5.0 BDS30 100 80 5.0 'cBO 0.1 VCB (V) 30 « hpE CSA743A 80 80 80 5.0 5.0 5.0 50 60 60 5.0 BD828 60 60 5.0 30 CSA743 50

to126

Abstract: TO-126 BD825-10 BD826-10 BD137-10 BD825 bd138-16 BD826 BD136 BD139-16
Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN GENERAL PURPOSE POWER TRANSISTORS VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) TO-126 45 3000 15000 40 >40 60 BD135 TO-126 45 1500 8000

bd826

Abstract: BD828-10 BD136-16 BD138-16 BD140-16 BD825-10 to126 philips power transistor bd139 BD140 philips BD138-10
Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued PNP GENERAL PURPOSE POWER TRANSISTORS VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) TO-126 45 3000 15000 40 >40 60 BD136 TO-126 45 1500 8000

Contextual Info: TO-202 PLASTIC PACKAGE TRANSISTORS PNP M axim um R atings Typ# No. V CBO V ECO V EBO (V) (V) (V) (MA) Min Min Min Max BD818 100 60 5.0 BDS30 100 80 5.0 'cBO • 0.1 « hpE VCB (V) 30 CSA743A 80 80 80 5.0 5.0 5.0 50 60 60 5.0 BD828 60 60 5.0 30 CSA743 50

TRANSISTOR BC 137

Abstract: TRANSISTOR BD 338 transistor BD 141 TRANSISTOR 328 SOT89 PXTA14 JC546 transistor BC 56 2PA1015 JC sc70 2PC1815
Contextual Info: P h ilip s Sem iconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors G ENER AL-PU R PO SE LO W -FREQ UENCY TRANSISTO RS OVERVIEW PRO DUCT DATA: PAG ES 7-16 LOW -POW ER NPN surface-m ount leaded

bd825

Abstract: BD825-16 bd829-10 BD829
Contextual Info: Philips Semiconductors Product specification NPN power transistors BD825; BD829 FEATURES PINNING • High current max. I A PIN • Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part of mounting surface 3 base APPLICATIONS • General purpose

bd825

Abstract: Transistor bd829
Contextual Info: Philips Semiconductors Product specification NPN power transistors BD825; BD829 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part of mounting surface 3 base APPLICATIONS • General purpose

BD826

Abstract: BD829 b0825 BD825 BD830 sot128b
Contextual Info: DISCRETE SEMICONDUCTORS ru i n i BD825; BD829 NPN power transistors Product specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC04 Philips Semiconductors 1998 May 29 PHILIPS Philips Semiconductors Product specification NPN power transistors

2n2222a SOT23

Abstract: 2n3906 sot23 2N3904 sot323 BC557 SOT23 2n2222a SOT223 2n2222 sot323 bd139 sot23 2n3904 sot23 philips bc107 sot23 2N5551 SOT23
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Conversion list Small-signal transistors Product specification File under Discrete Semiconductors, SC04 1997 Aug 06 Philips Semiconductors Product specification Small-signal transistors Conversion list SC04/CATEGORY CROSS REFERENCE PER PACKAGE

2n2222 2n5401 2n5551

Abstract: bc107 sot23 bd139 sot23 PHILIPS 2n2222a SOT23 2N3904 sot323 BC108 SOT23 package 2N2369A SOT363 BCY59 cross reference BC108 CROSS REFERENCE BC109 cross reference
Contextual Info: CONVERSION LIST Page General purpose low power 62 Darlingtons 63 Medium power/power 64 Medium frequency 64 Switching 65 High voltage 65 Resistor equipped RETs 66 Philips Semiconductors Product specification Small-signal transistors Conversion list SC04/CATEGORY CROSS REFERENCE PER PACKAGE

BC107 equivalent transistors

Abstract: 2n5401 equivalent BC557 equivalent 2N2907 equivalent 2n2905 replacement bc327 equivalent bc237 equivalent MPSa06 equivalent equivalent for BC337 bc327 replacement
Contextual Info: Philips Semiconductors Small-signal Transistors DISCONTINUED TYPE Replacement list REASON FOR DELETION REMARKS 2N1613 Discontinued 2N1711 Discontinued 2N1893 Discontinued 2N2219 Discontinued 2N2219A Discontinued 2N2222/A Discontinued 2N2369/A Discontinued

bc557

Abstract: BDX472 BDX452
Contextual Info: Philips Semiconductors Concise Catalogue 1996 Small-signal transistors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS GENERAL-PURPOSE L.F. BIPOLAR TRANSISTORS CONTINUED _ LEADED TYPES ratings type num ber characteristics

BD825

Abstract: BD826 BD829 BD830
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D067 BD825; BD829 NPN power transistors Product specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC04 1998 May 29 Philips Semiconductors Product specification NPN power transistors