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    BD644 PHILIPS Search Results

    BD644 PHILIPS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    10091791-003LF
    Amphenol Communications Solutions XCede® High Speed Backplane Connectors, #6-32 x 0.625" Long Philips Panhead Screw w/Square Conical Washer. PDF
    10091790-002LF
    Amphenol Communications Solutions XCede® High Speed Backplane Connectors, #2-56 x 0.375" Long Philips Panhead Screw w/Square Conical Washer. PDF
    10091790-003LF
    Amphenol Communications Solutions XCede® High Speed Backplane Connectors, #2-56 x 0.5" Long Philips Panhead Screw w/Square Conical Washer. PDF
    10091791-002LF
    Amphenol Communications Solutions XCede® High Speed Backplane Connectors, #6-32 x 0.5" Long Philips Panhead Screw w/Square Conical Washer. PDF
    10091791-001LF
    Amphenol Communications Solutions XCede® High Speed Backplane Connectors, #6-32 x 0.375" Long Philips Panhead Screw w/Square Conical Washer. PDF

    BD644 PHILIPS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    D 1991 AR

    Abstract: lg bd645 transistor d 1991 ar BD644 philips BD650 BD643 B0645 BD644 B0643 BD649 philips
    Contextual Info: BD644; 646; 648 _ jj^ BD650; 652 PHILIPS INTERNATIONAL SbE D • 711GÛ2b 7b7 M P H I N 'V - 3 3 - 3 SILICON DARLINGTON POWER TRANSISTORS PN P epitaxial-base transistors in a m onolithic Darlington circuit. They are housed in a TCJ-220


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    bd644bd650t-33-3tcj-220+12bd643bd645bd647bd649bd651d 1991 arlg bd645transistor d 1991 arbd644 philipsb0645b0643bd649 philips PDF

    D 1991 AR

    Abstract: BD852 transistor d 1991 ar TRansistor 648 DIODE 646 on 651 diode
    Contextual Info: BD644; 646; 648 _ j \ BD650^652_ PHILIPS INTERNATIONAL SbE D • 7 1 1 0 0 2 b □ D M E C144 7 b 7 H P H I N T -33-31 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit. They are housed in a T 0 -2 2 0


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    bd644bd650711002bbd643+9bd645bd647bd651d 1991 arbd852transistor d 1991 artransistor 648diode 646 on651 diode PDF

    SGS-Ates

    Abstract: sgs-ates transistors BD698 2SB1146 bd266 Motorola TIP125
    Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max A V(BR)CEO Of) PD hFE Max ON) Min Max *T 'CBO Max tr Max (Hz) (A) (8) r (CE)sat Max (Ohms) T Oper Max Package Style <°C) Darlington Transistors, PNP (Cont'd) . . . .5 . . . .10 . . 15 .


    Original
    sdm3203sdm3201sdm3204sgs125+9tip125tip625mje1090sgs-atessgs-ates transistorsbd6982sb1146bd266motorola tip125 PDF

    transistor BD6

    Abstract: bd645 transistor BD643 H 649 A transistor
    Contextual Info: J PHILIPS INTERNATIONAL SbE D m BD643; BD645; BD647; BD649; BD651 _ 7110fi2b 0042'i5b 741 I IPHIN -r-j 7 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching


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    bd643bd645bd647bd649+9bd6517110fi2bbd644bd646bd648bd650transistor bd6bd645 transistorh 649 a transistor PDF

    lg bd645

    Abstract: darlington bd 645 BD649 philips bd649 PNP transistor BD649 B0645 BD645 BD643 BD646 BD647
    Contextual Info: BD643; BD645; BD647; BD649; BD651 PHILIPS I N T ERNATIONAL 5bE D • 7110fl2b 0 0 4 2 ^ 741 « R H I N SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching


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    bd643bd645bd647bd649+11bd6517110fl2bt0-220bd644bd646bd648lg bd645darlington bd 645bd649 philipsbd649 pnp transistorb0645 PDF

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


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    bs9000d3007he4000b80ribution+10bpw22acm .02m z5u 1kvpin configuration of bfw10la4347b2x84tda3653 equivalenttriac tag 9322hef40106bp equivalentfx4054 coredsq8 PDF

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


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    edition-1978ausgabe-1978bs3934so-26+12ot-114ns371apy12byy32ac176aey26bav77bby20bd545bbav27transistor kt 209 maf367 PDF

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


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    lcd01bgy41bfw10 fet transistorcqy58+7germaniumrx101equivalent components fet bfw10bd643bf199283 to92 600a transistorzener phc PDF

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    sc08btransistor f6 13003equivalent transistor bj 131-6transistor eb 13003 bm+7bb112smd transistor code marking 2f 6na1211 lgcqy58bu705transistor 131-6 bj 026philips om350 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711 PDF