BD13 Search Results

bd131 equivalent

Abstract: BD131 EQUIVALENT IC bd131 BD132
Contextual Info: Inchange Semiconductor Product Specification BD131 Silicon NPN Power Transistors • DESCRIPTION ·Complement to type BD132 ·With TO-126 package ·High current Max: 3A ·Low voltage (Max: 45V) APPLICATIONS ·For general purpose power applications PINNING

Contextual Info: BRIGHT LED ELECTRONICS CORP. BL-BD131 SINCE 1981 ● Features: ● Package dimensions: 1. Chip material: GaAlAs/ GaAs 2. Emitted color : Super Red 3.80 .150 3. Lens Appearance : Red Diffused 3.00(.118) 4. Low power consumption. 5. High efficiency. 6. Versatile mounting on P.C. Board or panel.

BD138 coil

Abstract: BD135 BD136 BD138 BD140
Contextual Info: BD136, BD138, BD140 BD136, 138, 140 PNP PLASTIC POWER TRANSISTORS Complementary B D 135,137, 139 Medium Power Linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM MAX. A B 7.4 10.5 C 2.4 2 .7 D 0.7 0.9 2.25 TYP. E F

BD138G

Abstract: BD136 BD136 pin bd135 to-126 BD139 PIN DATA power transistor bd136 QW-R204-013 NPN Transistor Characteristics bd136 BD140l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR „ DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

BD140

Abstract: BD136 BD138 BD140 circuits bd138 hfe BD136 pin bd136 hfe BD136-16 BD140-10 BD140-16
Contextual Info: SavantIC Semiconductor Product Specification BD136 BD138 BD140 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·High current ·Complement to type BD135/137/139 APPLICATIONS ·Driver stages in high-fidelity amplifiers and television circuits

bd139

Abstract: BD135 BD137 bd139 140 BD139 circuits bd139 Complement BD139 silicon transistors BD135-10 BD135-16 BD139-10
Contextual Info: SavantIC Semiconductor Product Specification BD135 BD137 BD139 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·High current ·Complement to type BD136/138/140 APPLICATIONS ·Driver stages in high-fidelity amplifiers and television circuits

Contextual Info: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD 138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol : BD135 Rating Unit 45 V : BD137

TV RADIO IC free

Abstract: bf194 BD124 BF195 BD116 BF180 BFW87 BF196 BD133 BF197
Contextual Info: 54 T ran sisto rs Continued Electronic Valves Z & I Aero Services Ltd London England 1972-73 ^JapìiX Notes T03 15W 30m c 1t +80 T03 45W 95m cl2i +60 55<2 2A 1A BD123 BD124 S/NPN S/NPN T03 MD17 45W 15W 85m c<2) 60m cm +90 +70 55<2) 60‘2’ 1A 0 .5A BD131

transistor BD 246

Abstract: transistor BD 249 transistor BD 240 BD 35 transistor transistor bd 242 BD139-6 transistor BD 239 transistor BD245 BD135 transistor BD 241
Contextual Info: BDI 36 PNP EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD135 • • • • • • • Driver Stages Active Convergence Control Circuits Switching Application Ptot * 6.5 Wat TC * 60 <>c hpE > 40 at lc = —150 mA Vce sat < 0.5 V at lc “ - 0.5 A

Contextual Info: BD135T / BD137T / BD139T NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25 OC Parameter Symbol Value BD135T BD137T BD139T Unit Collector Emitter Voltage

MAR 733

Abstract: BD131 MAR 745 TRANSISTOR Q 817 BD132 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD131 NPN power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 04 Philips Semiconductors Product specification NPN power transistor

BD139

Abstract: BD139 N bd137 BD139-25 BD139 p BD135-BD137-BD139 bd135 N BD139 silicon transistors
Contextual Info: MCC BD135 BD137 BD139
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

transistor BD139 N

Abstract: bd139 Complement
Contextual Info: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol : BD135 VcB O Rating Unit 45 V : BD137 60 V

Contextual Info: r 7 z S G S - m O M S O BD135 BD137/BD139 N Ä T # [MO gfô l[L[iera®*S NPN SILICON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD135, BD137 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers

transistor BD139 N

Abstract: power transistor bd139 BD139 amplifier BD139 BD139 N TRANSISTOR NPN BD139 BD137-16 to126 case BD135-10 BD137-10
Contextual Info: DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MAXIMUM RATINGS: TC=25°C unless otherwise noted

CDIL BD139

Abstract: CDIL BD137 bd139 140 BD135 CDIL BD137 parameters bd135 BD136 mw 137 BD137 BD139
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-126 SOT-32 Plastic Package BD135, 137, 139 BD135, BD137, BD139 NPN PLASTIC POWER TRANSISTORS Complementary BD136, 138, 140

philips power transistor bd139

Abstract: BD139 N bd139 application note BD139 philips BD135 philips BD140 npn power transistor bd139 TRANSISTOR BD139 TRANSISTOR NPN BD139 TRANSISTOR NPN BD140
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD135; BD137; BD139 NPN power transistors Product specification Supersedes data of 1997 Mar 04 1999 Apr 12 Philips Semiconductors Product specification NPN power transistors BD135; BD137; BD139 FEATURES

BD139 application

Abstract: BD139 N bd139 BD135 BD139 p of bd139 bd135 N BD139-25 BD136
Contextual Info: MCC BD135 BD137 BD139
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components HDWXUHV • • DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

BD140 npn

Abstract: BD140 philips BD139 NPN transistor TRANSISTOR NPN BD140 BD140 application circuits circuits transistor BD139 N bd135 n bd140 equivalent transistor BD136 BD140 circuits
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D100 BD136; BD138; BD140 PNP power transistors Product specification Supersedes data of 1997 Mar 26 1999 Apr 12 Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 PINNING

bd139

Abstract: BD139 p BD135-BD137-BD139 bd135 N BD139 N BD139-25 BD136 bd137
Contextual Info: MCC BD135 BD137 BD139
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# HDWXUHV • • Power Transistors NPN Silicon 45,60,80 Volts DC Current Gain - hFE = 40 Min) @IC = 150mAdc Complementary with BD136, BD138, BD140

BD139

Abstract: BD136 transistors bd136 bd136 N
Contextual Info: Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 FEATURES PINNING • High current max. 1.5 A PIN • Low voltage (max. 80 V). 1 e m itte r 2 collector, connected to metal part of m ounting surface 3 base APPLICATIONS

Contextual Info: SEMICONDUCTOR BD135 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES ・High Current. Max. : 1.5A ・Low Voltage (Max. : 45V) ・DC Current Gain : hFE=40Min. @IC=0.15A ・Complementary to BD136. D C E F G H DIM A B

Contextual Info: BD136 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)8.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

BD139H

Contextual Info: SEMICONDUCTOR BD139 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES ・High Current. Max. : 1.5A ・DC Current Gain : hFE=40Min. @IC=0.15A ・Complementary to BD140. D C E F G H DIM A B C D E F G H J K L M N O P J