BD 139 Search Results

BUX 127

Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
Contextual Info: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B

SDT 9202

Contextual Info: fK> \Pj F Q W f i P_t mmS.A. TYPE NPN PNP BD 135 BD136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 $ BD 239 $ BD 240 $ BD 239A $ BD 240A $ BD 239B $ BD 240B $ BD 239C $ BD 240C $ BD 241 $ BD 242 $ BD 241A £ BD 242A

8D139

Abstract: bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135
Contextual Info: 2SC D • 053SbOS 0004332 4 « S I E G ^ - NPN Silicon Transistors ■ T ^ Ï'O T — BD 135 BD 137 SIEMENS AKTIEN6ESELLSCHAF- BD 139 For AF driver and ou tp u t stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126

BD 139 N

Abstract: transistor BD 141 bd139
Contextual Info: 2SC D • 023Sfc.GS 0QQ4332 4 c NPN Silicon Transistors SIEG D: BD 135 BD 137 BD 139 SIEMENS AKTIEN6ESELLSCHAF For AF driver and output stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is electrically connected to

transistor BD 378

Abstract: BD140 pnp transistor BD136 transistors bd136 bd136 N bd140
Contextual Info: BD136 BD138 BD140 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose p-n-p transistors in SOT-32 plastic package, recom m ended fo r d river stages in h i-fi am p lifiers and television circuits. The BD 135, BD 137 and BD 139 are co m p le m e n tary to the B D 136, BD 138 and B D 140 respectively.

transistor bd 126

Abstract: TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711
Contextual Info: TELEFUNKEN ELECTRONIC IN electronic 1?E D • Ô^SQO^b O D Q TB 'îS BD 135 • BD 137 • BD 139 Creativeledinotoe*^ T -^ -O S * Silicon NPN Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available

BD139 N

Abstract: BD 139 BD139 NPN BD140 BD135 BD136
Contextual Info: S C S -T H O M S O N M im [iEgTO *S BD135 BD137/BD139 NPN SILICON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD 135, BD 137 and BD 139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers

tfk 138

Abstract: tfk 136 tfk 140 BD 140 tfk 135 3 TFK 140 BD 139 140 72050 tfk bd 138 BD136
Contextual Info: BD 136 • BD 138 • BD 140 Silicon PNP Epitaxial Planar Power Transistors Anwendungen: Allgemein Im NF-Berelch Applications: General in AF-range Besondere Merkmale: • Verlustleistung 8 W Features: • Power dissipation 8 W

tfk 135

Abstract: bd139 tfk BD 139 140 BD 139 N tfk bd 137 j BD 139 TFK bd139 tfk 136 BD139 bd 135
Contextual Info: V BD 135 • BD 137 • B D 139 Silicon NPN Epitaxial Planar Power Transistors Anw endungen: Allgemein Im NF-Bereich Applications: General in AF-range Features: Besondere Merkmale: • Verlustleistung 8 W

alc860

Abstract: ALC860 schematics rqa200n03 rqa130n03 hy5ps561621afp-25 OZ128TN AF-15 P71EN0 OZ813 rtl8111b
Contextual Info: 5 4 3 2 1 S50IAx REV:D P/N LIST S50IAx Schematics Rev:D PAGE PCB P/N CONTENT PCB ASSY P/N S40II M/B 37GS50000-D0 S40/S50 TOUCH PAD BD S50IA M/B HYNIX 37GS50000-D0 82GS50000-D0 43. S40 MODEM BD S50IA M/B(SAM) 37GS50000-D0 82GS50000-? 44. S50 MODEM WITH USB BD

pin configuration transistor bd140

Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

FPT-48P-M19

Abstract: FPT-48P-M20 12PW 38
Contextual Info: MBM29SL800TD/BD-10/12 Data Sheet Retired Product MBM29SL800TD/BD -10/12 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-4E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

TRANSISTOR BC 136

Abstract: transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711
Contextual Info: TELEFUNKEN ELECTRONIC m ilFW K lIM electronic 17E D • fl^HDD'ib DQ’O TBR^ IALCÛ BD 136 BD 138 Ibd 140 Ci*tirtTtehnotoûte» T-33-17 Silicon PNP Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available

BD 139 N

Abstract: TOP-66 BD677N B0536 BD 139 140 B0680 BD139N BD139 SOT PL b0436
Contextual Info: Inventory o f discrete standard Types 9.1. Transistors Type P = PNP (N = NPN) Collector base reverse voltage V'oso ; v (V ces); BD 136 BD 137 Current gainbandw idth product / c; A fT; MHz P -45 -1 .5 50 N 60 -6 0 80 1.5 -1 .5 1.5 -80 45 -1 .5 2 50 50 >50

NT5TU32M16DG

Abstract: Nanya NT5TU32M16DG NT5T NT5TU32M16CG-25C NT5TU32M16CG-3CI NT5TU32M16CG NT5TU32M16CG-25DI nt5tu64m8 B.a Date sheet 2007 DDR2-667
Contextual Info: NT5TU128M4CE / NT5TU64M8CE / NT5TU32M16DG 512Mb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -25D/-25DI -25C/-25CI -BD -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6 5-5-5 7-7-7 6-6-6 tCK Avg. 266 333 400 400

Contextual Info: 1453-2012.qxp:QuarkCatalogTempNew 9/7/12 10:32 AM Page 1453 15 Wireless Bluetooth, Wireless Ethernet and Radio-Ready Enclosures TEST & MEASUREMENT 900 MHz Trusted Wireless Ethernet Radio INTERCONNECT 2900016 RAD-ISM-900-EN-BD-BUS The RAD-ISM-900-EN-BD industrial radio transceiver brings Ethernet or serial data from remote locations to IP based networks. It is suitable for SCADA applications and the highly reliable and secure transmissions make it ideal for integrating

Contextual Info: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD 138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol : BD135 Rating Unit 45 V : BD137

Contextual Info: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 V : BD137 60 V : BD139 80 V 45 V : BD137 60 V : BD139 80

BD139

Abstract: b*137 bd139 Complement power transistor bd137 power transistor bd139 transistor bd137 BD137 bd137 Transistor BD135 BD136
Contextual Info: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol : BD135 VcBO : BD137 : BD139 C ollector E m itter Voltage : BD135

DM6030HK

Abstract: TS3332LD XB1004 XP1022-BD XU1002 TRANSISTOR 9642
Contextual Info: 17.0-25.0 GHz GaAs MMIC Power Amplifier P1022-BD February 2007 - Rev 05-Feb-07 Features Chip Device Layout Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point

Contextual Info: 17.0-25.0 GHz GaAs MMIC Power Amplifier P1022-BD February 2007 - Rev 05-Feb-07 Features Chip Device Layout Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point

Contextual Info: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017-BD December 2009 - Rev 01-Dec-09 Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3