65e7
Abstract: BCY65 BCY 59 bcy58 59VIII BCY58-VIII BCY59 Q60203-Y58-G BCY 65 Q60203-Y59-J
Contextual Info: BCY 58, BCY 59, BCY 65 E ~ 2 N 2483 NPN Transistors fo r AF prestages, driver stages and switching applications BCY 58, BCY 59 and BCY 65 E are silicon planar NPN epitaxial transistors in a case 18 A 3 DIN 41 876 (TO -18). The collector is electrically connected to the case.
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q60203-y58-gq60203-yq60203-y58-jq60203-y58-k+11q60203-y59-jq60203-y59-k65-e765e7bcy65bcy 59bcy5859viiibcy58-viiibcy59bcy 65
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BCY71
Abstract: BCY 107 BCY72 100-C bcy72a bcy70
Contextual Info: BCY 70 BCY 71 BCY 72 SILICON PLANAR PNP GENERAL PURPOSE APPLICATIONS The BCY 70, BCY 71 and BCY 72 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case. They are intended for general purpose amplifier and switching applica tions. ABSOLUTE MAXIMUM RATINGS
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bcy71bcy 107bcy72100-c+2bcy72abcy70
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TRANSISTOR A104
Abstract: BCY59C BCY 85 A104 BCY58 Transistor BCY58 BCY59D A104 transistor BCY 68 CEB15
Contextual Info: MICRO GENERAL DESCRIPTION : BCY 58 BCY 59 MECHANICAL OUTLINE The BCY 58 and BCY 59 are NFN silicon planar epitaxial transistor. It features low saturation voltage and high gain. It is intended for use as audio frequency amplifier, magnetic core driver and general
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bcy58ic-10r2-700ohmtransistor a104+8bcy59cbcy 85a104transistor bcy58bcy59da104 transistorbcy 68ceb15
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BCY 107
Abstract: BCY 62 BCY71 BCY72 BCY 12 bcy70
Contextual Info: BCY 70 BCY 71 BCY 72 SILICON PLANAR PNP GENERAL PURPOSE APPLICATIONS The BCY 70, BCY 71 and BCY 72 are silicon planar epitaxial F‘NP transistors in Jedec T O -1 8 metal case. They are intended fo r general purpose am p lifie r and switching applica tions.
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g--18s1bcy 107bcy 62bcy71+3bcy72bcy 12bcy70
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BCY 59
Abstract: BCY 12 BCY58X BCY 85 BCY59 BCY59X BCY58 BCY58-VIII Ucesat BCY 58
Contextual Info: N P N -Transistoren fü r N F -V o r- und T re ib erstu fen sow ie S ch alteran w en dungen - BCY 58 BCY 59 BCY 65 E BCY 58, BCY 59 und BCY 65 E sind epitaktische NPN-Silizium -Planar-Transistoren im Gehäuse 18 A 3 DIN 41 876 T O -1 8 . Der Kollektor ist m it dem Gehäuse elektrisch ver
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q60203-bcy 59bcy 12bcy58x+7bcy 85bcy59bcy59xbcy58bcy58-viiiucesatbcy 58
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BCY 68
Abstract: BCY58 BCY59 0431I BCY68 BCY 59 Q60203-Y58 Q60203-Y58-H Q60203-Y58-J Q60203-Y59
Contextual Info: 2SC » • 023SbQS GGQM30b 3 « S I E G NPN Silicon Planar Transistors - BCY 58 BCY59 D - BCY 65 E 2 5C 04306 BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon Planartransistors in T 0 18 cases 18 A 3 DIN 41 87 6 . The collector is electrically connected to the case. The transistors
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23sb05bcy58bcy59q60203-y58+10q60203-y58-gq60203-y58-hq60203-y58-jq60203-y58-kq60203-y59q60203-y59-gbcy 680431ibcy68bcy 59
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BCY59
Abstract: BCY 85 BCY58 Q60203-Y58 Q60203-Y58-G Q60203-Y58-H Q60203-Y58-J Q60203-Y58-K Q60203-Y59 Q60203-Y59-G
Contextual Info: 2SC » • 023SbQS GGQM30b 3 « S I E G NPN Silicon Planar Transistors - 2 5C 0 4 3 0 6 BCY 58 BCY59 D - BCY 65 E BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon Planartransistors in T 0 18 cases 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors
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23sb05bcy58bcy59q60203-y58+7q60203-y58-gq60203-y58-hq60203-y58-jq60203-y58-kq60203-y59q60203-y59-gbcy 85
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BCY79
Abstract: bcy 78 bcy 79
Contextual Info: BCY 78 BCY 79 PNP SILICON TRANSISTOR TRANSISTOR PNP S ILIC IU M Compì, of BCY 58 and BCY 59 • Switching and amplifier Commutation e t am plification -3 2 V BCY 78 v CEO -4 5 V BCY 79 'c - 2 0 0 mA M a xim u m pow er dissipation Case TO-18 — See outline drawing CB-6 on last pages
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i-10ma990i2bcy79bcy 78+1bcy 79
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bcy580
Abstract: BCY590 transistor h21e SCHEMA BCY59 BCY 59
Contextual Info: *BCY 58 BCY59 NPN SILICON TRANSISTOR TRANSÌSTOR NPN S ILIC IU M Compì, of BCY 78 and BCY 79 Preferred device Dispositif recommandé • For switching and amplifier - Pour com m utation et am plification V CEO 32 V 45 V BCY 58 •c 200 mA BCY 59 Maximum power dissipation
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bcy59lb2ai10mabcy580bcy590+3transistor h21eschemabcy 59
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A404
Contextual Info: BCY 58 BCY 59 GENERAL DESCRIPTION i The BCY 58 and BCY 59 are NPN silic o n planar e p ita x ia l tra n s is to r. I t featu res low satu ratio n voltage and high gain. I t i s intended for use as audio frequency am p lifier, magnetic core d riv er and general
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390aw390mw-65ec200ma+2ta-150a404
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BCY792
Abstract: bcy 79 Q62702-C327 BCY78 BCY77 BCY 78 Q62702-C327-V1 Q62702-C327-V2 Q62702-C327-V3 78-IX
Contextual Info: 5SC T> m fi23SbOS D00432S 7 « S I E G r . PNP Silicon Planar Transistors BCY77 D _BCY78 BCY 79 25C 04325 SIEMENS A K T I E N 6 E S E L L SCHAF BCY 77, BCY 78, and BCY 79 are epitaxial PNP silicon planar transistors in TO 18 cases 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors are
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23sb05qq0432sq62702-c327q62702-c327-v1+12q62702-c327-v2q62702-c327-v3q60203-y78q60203-y78-gq60203-y78-hq60203-y78-jbcy792bcy 79bcy78bcy77bcy 7878-ix
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BCY77
Abstract: BCY79 BCY 791x zr 4.7v bcy 78 Q62702-C327 BCY78 Q62702-C327-V1 Transistor 78 L 05 1Zv transistor
Contextual Info: BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY 77, BCY 78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 TO-18 . The collector is electrically connected to the case. The transistors are of particular use in low-noise AF pre- and driver stages as well as in
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bcy77bcy79bcy78q62702-c327-v1+10q62702-c327-v2327-v3q60203-y78-gbcy 791xzr 4.7vbcy 78q62702-c327transistor 78 l 051zv transistor
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BCY77VII
Abstract: BCY78X BCY79 BCY 791x BCY77VIII BCY77 BCY78 Q62702-C327-V1 1Zv transistor
Contextual Info: BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY 77, BCY 78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 TO-18 . The collector is electrically connected to the case. The transistors are of particular use in low-noise AF pre- and driver stages as well as in
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bcy79bcy77bcy78q62702-c327-v1+10q62702-c327-v2327-v3q60203-y78-gq60203-y78-hbcy77viibcy78xbcy 791xbcy77viii1zv transistor
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Q62702-C327
Abstract: Q62702-C327-V2 bcy77 K1754 C327 Q62702-C327-V1 Q62702-C327-V3 78-IX Q60203-Y78-H BCY792
Contextual Info: 5SC D • a23SbQS 0Q0432S 7 « S I E G r PNP Silicon Planar Transistors _ SIEMENS AKTIENGESELLSCHAF . BCY77 25C 04325 D ;_ B£ I ? S BCY79 BCY 77, BCY 78, and BCY 79 are epitaxial PNP silicon planar transistors in TO 18 cases 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors are
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53sbosg00432sq62702-c327q62702-c327-v1+11q62702-c327-v2q62702-c327-v3q60203-y78q60203-y78-gq60203-y78-hq60203-y78-jbcy77k1754c32778-ixbcy792
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tfk 731
Abstract: N100700 bcy 79 BCY58 BCY 65 BCY 59
Contextual Info: BCY 58 • BCY 59 Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: Allgem ein und NF-Verstärker Applications: General and AF am plifiers Besondere Merkmale: Features: • Verlustleistung 1 W 0 Power dissipation 1 W
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tfk 731n100700bcy 79bcy58+2bcy 65bcy 59
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BCY69
Abstract: BCY 69 transistor 468
Contextual Info: BCY 69 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S ILICIUM , PLANAR EPITAXIAL - LF small signal amplification low noise Amplification BP petits signaux (faible bruit) v CEO 20 V 'c 100 mA *216 (2 600 - 900 F (0,2 mA) 5 dB max Maximum power dissipation
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BCY67
Abstract: HTI 2E 101S Q62702-C254
Contextual Info: BCY67 PNP Transistor for low-noise AF pre-stages BCY 67 is an epitaxial PNP silicon planar transistor in a case 18 A 3 DIN 41 876 T O -18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise pre-stages as well as in
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bcy6710zkhzhti 2e101s+1q62702-c254
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bcy 79
Contextual Info: rz 7 ^ 7# SGS-THOMSON R L E M « ! BCY 79 LO W NOISE AU D IO AM PLIFIER S DESCRIPTION The BCY79 is a silicon planar epitaxial PNP transistors in JedecTO-18 metal case. They are designed for use in audio driver and low-noise input stages. The complementary NPN type is the BCY59.
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59VIII
Abstract: 79VIII BCY 62 59IX BCY 68 79-IX BCY57 BCY58VII BCY58VIII T018
Contextual Info: BHARAT ELEK/SEfllCOND DI 47E D • 14353^0 □□□□013 72? ■ B E L l T '"Zf'OÍ VCE Si Device No VCEO VCBO Volts mm Volts mm V ebo Vofts mm hFE at bias min /max Ic mA VCE Volts 1CM mA max Ptol mW max ICBO <A typ (Sat Volts typ fT MHz typ Cob pF typ
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bcy57bcy58viibcy58viii59viii+11100min78vii78viii79vii79viiibfw10bcy 6259ixbcy 6879-ixt018
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59VIII
Abstract: 79-IX BCY 68 BCY58X BCY 62 BFW10 59vii BHARAT elek BCY58VII BCY58VIII
Contextual Info: BH AR AT E L E K / S E m C O N D DI 47E D • 1 4 3 5 3^ 3 □ □ □□ □1 3 ?B? ■ B E L l T ~ 2 7 '0 t VCE Si V CEO D e vice No VCBO Volts V o lts mm mm V ebo V ofts min hFE Ic V CE i CM at bias min /max mA Volts mA max Ptol mW ICBO »¿A typ max S at
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Q62702-C327
Abstract: BCY79 BCY 12 C327 78-VIII 79IX 34RR
Contextual Info: PIMP-Transistoren für rauscharm e NF-Vor- und B C Y 77 Treiberstufen B C Y 78 -B C Y 79 BC Y 77; BC Y 78; BC Y 79 sind epitaktische PNP-Silizium-Planar-Transistoren im Gehäuse 18 A3 DIN 41 876 TO -18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Die
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q62702--c327-v1-c327-v2-c327-v3+10q60203--y78-g-y78-hq62702-c327bcy79bcy 12c32778-viii79ix34rr
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transistor BC 584
Abstract: TRANSISTOR BC 456 Transistor BC 585 transistor BC 583 D 92 02 78.P BFW 10 fet Transistor BFX 41 TRANSISTOR BC 416 b BC583 transistor BC 548
Contextual Info: 6091788 MICRO ELECTRONICS C ORP 820 0064 5 05 DE § b D T 1 7 f l a QODGbMS 4 | TYPE NO. POLARITY Low Level and General Purpose Amplifiers H MAXIMUM RATINGS V CE SAT FE Cob N.F. max max (MHz) (pF) (dB) — 200+ 150 150 150 150 2.7+ 4.5 4.5 4.5 6 2 10 10 4
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bdt17flao-92fto-02melf-002+10transistor bc 584transistor bc 456transistor bc 585transistor bc 583d 92 02 78.pbfw 10 fettransistor bfx 41transistor bc 416 bbc583transistor bc 548
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bc 170
Abstract: BC108C 173C BC174 bc 170 c transistor Bc 540 BC108A BFY19 BC 109 Transistor specification of transistor bc 107
Contextual Info: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors l c = 100mA for general amplifying and switching purposes Common maximum ratings - lc -V e B O 100 mA5 5 V5 Common characteristics (Tamb — 25 C) 300 mW (TO -92)3 300 mW (TO -18)4 Ti P lo t
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100mabc108bbc108cbc 170+8173cbc174bc 170 ctransistor bc 540bc108abfy19bc 109 transistorspecification of transistor bc 107
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g16b
Abstract: D71613 TGWR
Contextual Info: N EC ELECTRONICS INC Tfi D 1b457SS5 0015^3 □ D T ^ S 2 t S 5 -C 3 |iPD71613 CMOS Bus C o n t r o l l e r P r e l im in a r y I n f o r m a t io n Description Pin Configuration The n P D 7 1 6 1 3 is a high performance C M O S bus controller for the nPD70616 V60 microprocessor. The
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1b457ss5upd71613npd70616ipd70616+6b4275251st31t-52-33-03g16bd71613tgwr
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