990I2 Search Results

x70g

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCX70GLT1 B C X70JLT1 BCX70KLT1 G e n e ra l P urpose T ran sisto rs NPN Silicon MAXIMUM RATINGS Symbol Value Unit C o lle c to r- E m itter Voltage V C EO 45 Vdc C o lle c to r-B a s e Voltage VCBO 45 Vdc E m itte r-B a s e Voltage

Contextual Info: ÜMC U M 6264A Series 8K x 8 CMOS SRAM PRELIMINARY Features • S ingle+ 5 v o lt power supply ■ Access times: 100/120 ns m ax. 1 ■ F u lly static operation, no clock or refreshing required ■ D ire ctly T T L com patible: A ll inputs and outputs ■ Current:

Contextual Info: DENSE-PAC 2 Megabit UVEPROM MICROSYSTEMS DPV128X16A DESCRIPTION: The D P V 128X 16A is a 40-pin Pin Grid Array PGA consisting of two 128K X 8 UVEPROM devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate with matched thermal coefficients.

BCW61DR

Contextual Info: plessey "ÏÏB s e m i c o n d /d i s c r e t e » F|7 SS05 33 DOOtitiBO = r ~T' PNP silicon planar small signal transistor BCW 61 A B S O L U T E M A X IM U M R A T IN G S Parameter Collector-Emitter Voltage Collector-Emitter Voltage Sym bol Emitter-Base Voltage

BCY79

Abstract: rpy18 BCY78 BCY78-VII BCY79-VII mw246
Contextual Info: b^E D N AMER PH ILI PS/DISCRETE □□27hS2 G4h L . t £ 3 cm A IAPX D O T /Ö BCY79 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes, intended for use in am plifier and switching applications. Q U IC K R E F E R E N C E D A T A