BCW61D 215 Search Results

bc856b

Abstract: IC 8002
Contextual Info: SURFACE MOUNT CATALOGUE SOT 23 CERAMIC LCC PNP GENERAL PURPOSE PNP RATINGS DEVICE BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40 BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C BCW29 BCW30 BCW61A BCW61B BCW61C BCW61D hFE VCE SAT fT VCEO IC

TMPT404

Contextual Info: ALLEGRO MICROSYSTEMS 8514019 SPRAGUE. INC =53 D • G5DM33Ö 0D03b07 b ■ A L GR SE M IC O N DS /I C S SMALL-OUTLINE BIPOLAR TRANSISTORS PNP Transistors ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO Device Type Marking BCW29 BCW30 BCW61A BCW61B BCW61C BCW61D

BCV72

Abstract: BCW29 BCW30 BCW31 BCW32 BFQ31 BFQ31A BFS20 BSS63 BSS64
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION T R A N S IS T O R S T R A N S IS T O R S Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW 60A BCW60B BCW 60C BCW 60D BCW 61A BCW61B BCW 61C

BCV71

Abstract: BCV72 BCX70G FMMT3903 FMMT3904 FMMT3905 FMMT3906 BCW61D 215
Contextual Info: SOT-23 TRANSISTORS NPN GENERAL PURPOSE RATINGS A N D CHARACTERISTICS at 25°C ambient temperature. Type BCV71 BCV72 FM MT3903 FMMT3904 BCW 71/71R BCW 72/72R BCX70G BCX70H BCX70J BGX70K BCW 60A BCW60B BCW60C BCW 60D BCW 31/31R BCW 32/32R BCW 33/33R FM M T-A 20

marking C1

Abstract: TMPTA70 TMPT5401 h2t1
Contextual Info: PNP TRANSISTORS SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T. = 25°C V BF CBO v (BR)CEO V(BR)EBO Max. @ v CB Device hFE We «T @ lc @ v CE Max. @ lc Marking (V) (V) (V) (nA) BCW29 C1 303 32 5.0 100 20 120 260 2.0 BCW30 C2 3ID3 32 5.0 100 20 215 500 2.0

BCW31

Abstract: BCW31R BCW32R BCW33R BCV72 BCW32 BCW33 BFQ31 BFQ31A ferranti
Contextual Info: I BCW31 BCW32 BCW33 FERRANTI T IIsemiconductorsL NPN S ilic o n Planar Sm all S ignal Transistors D ESC R IP TIO N These devices are intended fo r use in low level, general purpose applications. Encapsulated in the popular SO T-23 package these devices are designed specifically fo r use in thin and th ick Film

BCW70R

Abstract: general purpose complementary transistors 1a 50v BCW71 scw71 BCW69 BCW69R BCW70 BCW72 BFQ31 5P sot23
Contextual Info: FERRANTI semiconductors * BCW69 BCW70 PNP Silicon Planar Small Signal Transistors DESCRIPTION These devices are intended fo r lo w level, general purpose applications. Com plementary to th e BCW71 and BCW72. Encapsulated in th e popular SOT-23 package these devices

FMMT3906

Abstract: SOT213 FMMT3905 ferranti BFQ31 FMMT3903 FMMT3904 PNP 3906 SOT23 T3905 BCW2
Contextual Info: FERRANTI semiconductors FMMT3905 FMMT3906 PNP Silicon Planar General Purpose Switching Transistors D E S C R IP T IO N These d e vice s are intended fo r use in sm all and m edium sign a l a m p lifica tio n a p p lica tio n s fro m d.c. to radio frequencies.

BCV71R-K6

Abstract: BCV71 BCV72R small signal transistor BCV72-K8 marking H6 sot 23 BCV71R BCV72 BCW29 marking h5 sot-23-5
Contextual Info: FERRANTI *semiconductors BCV71 BCV72 NPN Silicon Planar Small Signal Transistor DES C R IPTIO N These devices are intended fo r lo w level, general purpose applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ic k film hybrid

BCW71K1

Abstract: BCW72R-K5 BCW71 BFQ31 BCW71R BCV72 Ferranti Semiconductors BCW69 BCW72 BCW72R
Contextual Info: I FERRANTI BCW71 BCW72 T IIsemiconductors L NPN S ilicon Planar Small Signal Transistors DESCRIPTION These devices are intended fo r low level, general purpose applications. Com plem entary to the BCW 69 and BCW7Q. Encapsulated in the popular SOT-23 package these devices

sd marking bh

Abstract: BCV72 BCW29 BCW30 BFQ31 BFQ31A BFS20 FMMT2484 Ferranti Semiconductors npn 1b
Contextual Info: FMMT2484 CHARACTERISTICS at Tj = 25°C unless otherw ise stated . Collector-base breakdown voltage V(BR)CBO 60 - V lc = 10MA Collector-em itter breakdown voltage V(BR)CEO 60 - V lc = 10m A Emitter-base breakdow n voltage 'A bfuebo 6 - V lE = 1 0 MA Collector cut-off current

transistor marking code 7E SOT-23

Abstract: transistor with marking BH BCV72 BFQ31 BFQ31A FMMT5087 FMMT5087R NPN transistors sot-23 26 ferranti CB SOT-23
Contextual Info: I t FERRANTI IlsemiconductorsL FMMT5087 PNP S ilicon Planar Small Signal T ra n s is to r D ES C R IPTIO N T h is d e v ic e is a p p lic a tio n s . in te n d e d fo r lo w le v e l, g e n e ra l p u rp o s e E n ca p s u la te d in th e p o p u la r SOT-123 p a c k a g e th e d e v ic e is

BCV72

Abstract: BCW29 BCW30 BCW89 BCW89R BFQ31 BFQ31A BFS20 1G t 90 SOT-23 ferranti
Contextual Info: It I!semiconductors FERRANTI L BCW89 P N P S ilico n Planar Sm all S ig n a l Transistors! DESCRIPTION This device is applications. intended for low level, general purpose Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid

SOT 213

Abstract: SOT213 bk sot 23 marking ferranti Ferranti transistor marking 952 BCV72 BCW29 BCW30 BFQ31
Contextual Info: IJFERRANTI T IIsemiconductors ^ FMMT4124 N P N S ilico n Planar General Pu rp o se S w itc h in g T ransisto r DESCRIPTION This device is intended for use in small and medium signal amplification applications from d.c. to radio requencies. Encapsulated in the popular SOT-23 package the device is

Contextual Info: Transistor m in i Reel PNP — R atin g s m iniB a g Bulk 500 pcs _ Type_ PNP G en eral P urpose BC80S-16 73-8081 BC80E-25 73-8082 BC806-40 73-8083 V ceo Ic 100 f ICS V mA M in-M ax VCE fT M H z P art Marketing 53-8081 53-8082 53-8083 25V 500mA 100-250

FMMT3906

Abstract: FMMT3904 equivalent FMMT3905 BCV72 BCW29 BFQ31 BFQ31A BFS20 FMMT3903 FMMT3904
Contextual Info: FERRANTI semiconductors FMMT3903 FMMT3904 NPN Silicon Planar General Purpose Sw itching Transistors D E S C R IP T IO N These d e vice s are intended fo r use in sm all and m edium sign a l a m p lifica tio n a p p lica tio n s fro m d.c. to radio frequencies.

FMMT3905

Abstract: BC856A BC856B BC857A BC857B BCW69 BCW70 BCW89 FMMT3906 FMMT5087
Contextual Info: SOT-23 TRANSISTORS & DIODES GENERAL PURPOSE TRANSISTORS PNP Type BC856A yc,B° V CEO 'c mA P,o, mW V ^E(sat) Hf min./max. Eat Ir/VCE max at Iç /Ib mA/volts Volts mA typ. MHz 80 65 100 350 110/220 150 Volts Volts 2/5 0 .3 10/0.5 BC856B 80 65 100 350 200/450

Contextual Info: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type BR CBO V ’ (BR)CEO (V) (V) v DC Current Gain (BR)EBO Max. @ V C8 (V) (nA) (V) K* v CE(MI) @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)

Contextual Info: N AtlER P H I L I P S / D I S C R E T E SSE D • b b S B IB l 001^337 1 ■ Surface Mount Devices GENERAL PURPOSE TRANSISTORS, PNP TYPE PACKAGE RATINGS hpe VCEO V VCBO V min/max. at Iq A/c e mA/V mA VCE sat max. atfc/lQ V mA/mA ' H typ mh2 , PINOUT ; SEE 7

Contextual Info: ALLEGRO MICROSYSTEMS INC LIE ]> • 0504330 000b3A7 ■ A L 6R PNP TRANSISTORS TO-92ITO-226AA V*3 W and ‘T P DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C 'cBO DC Current Gain v CEIMl] * le V Max. v BR CBO V y(BR>CEO * (BR)EBO Max. @ v CB hFE K e

tp4093

Abstract: TMPT5401 mA 723 TMPT2907 TP4221
Contextual Info: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type v BR CBO V ’ (BR)CEO (BR)EBO Max. @ V C8 (V) (V) (V) (nA) (V) v CE(MI) DC Current Gain K* @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)

1ff TRANSISTOR SMD MARKING CODE

Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
Contextual Info: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369

PXTA14

Abstract: BST60 PMBTA14 2PD601A PMBTA64
Contextual Info: SELECTION GUIDE page G eneral p urpose tra n sisto rs 24 H ig h -fre q u e n cy tra n sisto rs 28 B ro a d b a n d tra n sisto rs 29 S w itch in g tra n sisto rs 31 L o w -n o ise tra n sisto rs 33 H ig h -vo lta g e tra n sisto rs 34 F ie ld -e ffe ct tra n sisto rs

ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Contextual Info: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2