BCW61 Search Results

100MHZ

Abstract: BCW61B
Contextual Info: RECTRON BCW61B SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation SOT-23 COLLECTOR MECHANICAL DATA * * * * * 3 Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed

Contextual Info: BCW61A BCW61B BCW61C BCW61D IL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD PACKAGE OUTLIN E DETAILS A LL DIM EN SION S IN mm 3.0 2.8 0.14 0.48 0.38 3 2.6 2A Pin configuration 1 = BASE

BCW60

Abstract: BCX70 BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCW61 BCX71
Contextual Info: BCW60, BCX70 NPN Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW61, BCX71 PNP 2 1 Type Marking Pin Configuration

bc 357 transistor

Abstract: BCW61C-BC BCW61C transistor BC SERIES transistor BC 55 BCW61B BCW61D BC transistor series transistor W-32 Bcw61d sot23
Contextual Info: BCW61B BCW61C BCW61D w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW61B Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low level, low noise

Diodes Marking K6

Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

BCW61

Abstract: mark xa SOT-23 ferranti BCW60 BCW61A BCW61B BCW61C JS sot-23
Contextual Info: FERRANTI semiconductors BCW61 P N P S ilicon Planar Small Signal Tra nsistors D E S C R IP T IO N These devices are intended for lo w level applications including sw itch in g and lo w noise. Com plem entary to the BCW 60. Encapsulated in the popular SO T-23 package these devices

BCV72

Abstract: BCW29 BCW30 BCW31 BCW32 BFQ31 BFQ31A BFS20 BSS63 BSS64
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION T R A N S IS T O R S T R A N S IS T O R S Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW 60A BCW60B BCW 60C BCW 60D BCW 61A BCW61B BCW 61C

marking code 724 g

Abstract: BCW61LT1 BCW61CLT1 BCW61DLT1 BCW61BLT1 code 1k Marking Code 2K transistor marking code 012
Contextual Info: BCW61LT1 PNP Silicon Epitaxial Planar Transistors for general purpose switching and amplification. These transistors are subdivided into three groups B, C and D, according to their current gain. As complementary types the NPN transistors BCW60LT1 are recommended.

Contextual Info: BCW61BLT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo -32 V Collector-Emitter Voltage

Contextual Info: : S v m Se m i : 5YM5EMI SEMICONDUCTOR BCW61B SOT -23 Plastic Encapsulate Transistors TRANSISTOR PNP FEATURES Power dissipation PCM : 0.25 Collector current Icm : W -0.2 (Tamb=25 °C) A Collector base voltage V ( b r )cbo : ~32 V Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 BCW61C TRANSISTOR（ PNP ） 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.25 W（Tamb=25℃） Collector current ICM: -0.1 A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 BCW61B TRANSISTOR（ PNP ） 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.25 W（Tamb=25℃） Collector current ICM : -0.2 A

BCW61A

Abstract: BCW61B BCW61C BCW61D 072d
Contextual Info: BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors M arking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD PA C KA G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m 3 .0 0 .1 4 Pin configuration 1 = BASE 2 = EMITTER

Contextual Info: PNP Silicon AF Transistors 32E D m Û23b320 OOlbbfiS 4 « S I P T 'M - IJ SIEMENS/ SPCL-. SEMICONDS • • • • • a a a a BCW61 BCX71 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BCW61B TRANSISTOR PNP SOT-23 1. BASE FEATURES 2. EMITTER 1. 0 3. COLLECTOR Power dissipation W (Tamb=25℃) TJ, Tstg: -55℃ 0. 95 0. 4 2. 9 Collector current -0.2

bc856b

Abstract: IC 8002
Contextual Info: SURFACE MOUNT CATALOGUE SOT 23 CERAMIC LCC PNP GENERAL PURPOSE PNP RATINGS DEVICE BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40 BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C BCW29 BCW30 BCW61A BCW61B BCW61C BCW61D hFE VCE SAT fT VCEO IC

marking k4

Abstract: 100az FMMT2222A BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TR A N SISTO R S TR A N SISTO R S Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW 60A BCW60B BCW60C BCW60D BCW 61A BCW61B BCW61C BCW61D BCW 65A

Diodes Marking K7

Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B

transistor smd marking BA

Contextual Info: Transistors IC SMD Type Product specification BCW61A/B/C/D Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 PNP Epitaxial Silicon Transistor 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

transistor bc 556c

Abstract: transistor BC 157 BCW61 BCW61B BCW61BLT1 BCW61C BCW61CLT1 BCW61D BCW61DLT1 MPS3905
Contextual Info: MOTOROLA Order this document by BCW61BLT1/D SEMICONDUCTOR TECHNICAL DATA BCW61BLT1 BCW61CLT1 BCW61DLT1 General Purpose Transistors PNP Silicon COLLECTOR 3 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –32

BCW60

Abstract: BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCW61 BCX70 BCX71
Contextual Info: BCW60, BCX70 NPN Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW61, BCX71 PNP 2 1 Type Marking Pin Configuration

42t sot-23

Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
Contextual Info: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

BCW60A

Abstract: BCW60D BCW61A BCW61B BCW61C BCW61D
Contextual Info: BCW61A . BCW61D BCW61A . BCW61D Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2006-07-31 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse

F1K marking

Contextual Info: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature