BCW61 Search Results

BCW60BLT1

Abstract: BCW60CLT1 BCW60DLT1 marking 1R PNP marking code 1Y
Contextual Info: BCW60LT1 NPN Silicon Epitaxial Planar Transistors for general purpose switching and amplification. These transistors are subdivided into three groups B, C and D, according to their current gain. As complementary types the PNP transistors BCW61LT1 are recommended.

Contextual Info: BCW61B BCW61C BCW61D w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW61B Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low level, low noise

SOT-23 MARKING M101

Abstract: MPS3905 BCW61 BCW61B BCW61BLT1 BCW61C BCW61CLT1 BCW61D BCW61DLT1 SOT M10
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon BCW61BLT1 BCW61CLT1 BCW61DLT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO – 32 Vdc Collector–Base Voltage V CBO – 32

Contextual Info: • fe.fc.53^31 0054577 fib3 H A P X N AMER PHILIPS/DISCRETE BCW61 SERIES b?E J> J V SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors, in a microminiature plastic envelope, intended for low level, low noise, low frequency purpose applications in hybrid circuits.

BCW61A

Abstract: marking BA RT TRANSISTOR PNP BA RT SOT 89 BCW61B BCW61C BCW61D
Contextual Info: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BCW61D SOT-23 TRANSISTOR PNP FEATURES 1. BASE Power dissipation 2. EMITTER 3. COLLECTOR AXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BCW61C SOT-23 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.1 A ICM: Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BCW61C SOT-23 TRANSISTOR PNP FEATURES 1. BASE Power dissipation 2. EMITTER 3. COLLECTOR AXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units

NPN marking 8e

Abstract: FMMT2222A H9 sot 23 BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

Contextual Info: BCW61 ELECTRICAL CHARACTERISTICS at Tamb= 25°C unless otherwise stated . PARAMETER SYM B O L M IN . C ollector-Em itter Breakdown Voltage U N IT C O N D ITIO NS. V (BR)CEO -32 V lCEc f-2 m A Emitter-Base Breakdown Voltage V(BR)EBO -5 V 'e b c t ' V A Collector-Em itter C ut-off

100MHZ

Abstract: BCW61D
Contextual Info: RECTRON BCW61D SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) SOT-23 COLLECTOR MECHANICAL DATA * * * * * 3 Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed

BCW60

Abstract: BCW61 BCW61A BCW61B BCW61C BCW61D BCX70 BCX71 BCX71G BCX71H
Contextual Info: BCW61., BCX71. PNP Silicon AF Transistors • For AF input stages and driver applications 2 3 • High current gain 1 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW60, BCX70 NPN • Pb-free (RoHS compliant) package 1)

BCW61A

Contextual Info: BCW61 Series VISHAY Vishay Semiconductors Small Signal Transistors PNP Features C 3 2 • PNP Silicon Epitaxial Planar Transistors • Suited for low level, low noise, low frequency applications in hybrid cicuits. • Low Current, Low Voltage. • As complementary types, BCW60 Series NPN

100MHZ

Abstract: BCW61C
Contextual Info: RECTRON BCW61C SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.25 W (Tamb =25OC) SOT-23 COLLECTOR MECHANICAL DATA * * * * * 3 Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed

bcx71

Contextual Info: BCW61 BCX71 SMALL SIGNAL PNP TRANSISTORS Type Marking BCW 61A BA BCW 61B BB BCW 61C BC BCX71G BG BCX71H BH BCX71J BJ 2 3 • ■ ■ ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AF AMPLIFICATION AND

bcx71

Contextual Info: BCW61, BCX71 PNP Silicon AF Transistor
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration

MARKING CODE 21E SOT23

Abstract: bcw60 bcx70
Contextual Info: BCW60, BCX70 NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain 2 3 1 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW61, BCX71 PNP Type Marking

BCW61

Abstract: BCW61A BCW61B BCW61C BCW61D
Contextual Info: • 0G 54 S 7 7 fib3 ■ APX N AUER P H I L I P S / D I S C R E T E BCW61 SERIES b?E ]> SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors, in a m icro m in ia tu re plastic envelope, intended fo r lo w level, lo w noise, low frequency purpose applications in h y b rid circu its.

MMBT4121

Abstract: MMBT2904 MMBT3905 TO236 pn4122
Contextual Info: NATL SEMICOND DISCRETE 5SE ]> • bSD1130 0037777 2 ■ ~T~~2~7~0J PNP General Purpose Transistors by Ascending Vceo (continued) Vceo(V) Vcbo(V) Min Min Min Max (mA/V) BCF29 BCF30 BCW61A 32 32 32 32 32 32 120 215 120 260 500 220 2/5.0 2/5.0 2/5.0 2N1132A

Contextual Info: User’s Manual V850E/ME2 32-bit Single-Chip Microcontroller Hardware PD703111B Document No. U16031EJ7V0UD00 7th edition Date Published September 2008 NS Printed in Japan [MEMO] 2 User’s Manual U16031EJ7V0UD NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN

Contextual Info: Preliminary User’s Manual V850E2/ME3 32-Bit Single-Chip Microcontroller Hardware µPD703500 Document No. U17126EJ2V0UD00 2nd edition Date Published March 2006 N CP(K) 2004 Printed in Japan [MEMO] 2 Preliminary User’s Manual U17126EJ2V0UD NOTES FOR CMOS DEVICES

KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION

C1554

Abstract: BKs sot-23 SIEMENS BJS marking BJs
Contextual Info: SIEMENS PNP Silicon AF Transistors BCW 61 BCX 71 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 60, BCX 70 NPN Type Marking

germanium transistor CK722

Abstract: CK722 CK721 SSA480 SA5-37 2sa525 2SC621 SA52B 2SC912 2N3400
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,